公开(公告)号：US20050074979A1

公开(公告)日：2005-04-07

申请号：US10678758

申请日：2003-10-02

申请人： Haoren Zhuang ,  Ulrich Egger ,  Rainer Bruchhaus ,  Karl Hornik ,  Jenny Lian ,  Stefan Gernhardt

发明人： Haoren Zhuang ,  Ulrich Egger ,  Rainer Bruchhaus ,  Karl Hornik ,  Jenny Lian ,  Stefan Gernhardt

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L27/11502 ,  H01L21/31122 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.

摘要翻译： 具有垂直结构的铁电体通过在绝缘体上沉积铁电层的工艺形成。 在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。 然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。 进行进一步蚀刻以在Al 2 O 3层中形成间隙，用于连接到其下方的导电元件。 因此，在进行第二蚀刻步骤的时候， 已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。

公开(公告)号：US06420272B1

公开(公告)日：2002-07-16

申请号：US09460700

申请日：1999-12-14

申请人： Hua Shen ,  David Edward Kotecki ,  Satish D. Athavale ,  Jenny Lian ,  Gerhard Kunkel ,  Nimal Chaudhary

发明人： Hua Shen ,  David Edward Kotecki ,  Satish D. Athavale ,  Jenny Lian ,  Gerhard Kunkel ,  Nimal Chaudhary

IPC分类号： H01L2100

CPC分类号： H01L28/60 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/32139 ,  H01L28/55

摘要： In semiconductor dynamic random access memory circuits using stacked capacitor storage elements formed using high permittivity dielectric material, it is typical to form the stacked capacitors using noble metal electrodes. Typically, the etching process for the noble metal electrodes requires the use of a hard mask patterning material such as silicon oxide. Removal of this hard mask frequently results in damage to the dielectric surface surrounding the patterned noble metal electrode. A method of removing the hard mask material without damaging the surrounding surface includes the steps of: depositing a soft mask photoresist material over the composite surface, including the hard masked covered noble metal electrode and the dielectric surface, in a manner such that the soft mask material is thinner over the region of the noble metal electrode; removing the portion of the soft mask material over the noble metal electrode leaving the soft mask material over the dielectric surface; etching the hard mask material with the soft mask material protecting the dielectric surface; and removing the remaining portion of the soft mask material.

摘要翻译： 在使用高介电常数电介质材料形成的叠层电容器存储元件的半导体动态随机存取存储器电路中，典型的是使用贵金属电极形成叠层电容器。 通常，贵金属电极的蚀刻工艺需要使用诸如氧化硅的硬掩模图形材料。 去除这种硬掩模常常导致图案化的贵金属电极周围的电介质表面的损坏。 在不损坏周围表面的情况下去除硬掩模材料的方法包括以下步骤：在复合表面上沉积软掩模光致抗蚀剂材料，包括硬掩蔽的贵金属电极和电介质表面，使得软掩模 材料在贵金属电极的区域上较薄; 在所述贵金属电极上除去所述软掩模材料的所述部分，从而将所述软掩模材料留在所述电介质表面上; 用保护电介质表面的软掩模材料蚀刻硬掩模材料; 以及去除所述软掩模材料的剩余部分。

公开(公告)号：US06420267B1

公开(公告)日：2002-07-16

申请号：US09551757

申请日：2000-04-18

申请人： Chenting Lin ,  Ronald J. Schutz ,  Andreas Knorr ,  Keith Wong ,  Hua Shen ,  Jenny Lian

发明人： Chenting Lin ,  Ronald J. Schutz ,  Andreas Knorr ,  Keith Wong ,  Hua Shen ,  Jenny Lian

IPC分类号： H01L2100

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55

摘要： A method of forming an integrated barrier/contact for stacked capacitors is provided which results in reduced cost of ownership and in a barrier which is nominally several times thicker than convention structures. The resulting structure results in decreased contact plug resistance as compared with conventional devices.

摘要翻译： 提供了一种形成用于层叠电容器的集成屏障/触点的方法，其导致所有权成本降低以及名义上比常规结构厚几倍的屏障。 与常规装置相比，所得结构导致接触插头电阻降低。

公开(公告)号：US06339007B1

公开(公告)日：2002-01-15

申请号：US09562556

申请日：2000-05-02

申请人： Yun-Yu Wang ,  Rajarao Jammy ,  Lee J. Kimball ,  David E. Kotecki ,  Jenny Lian ,  Chenting Lin ,  John A. Miller ,  Nicholas Nagel ,  Hua Shen ,  Horatio S. Wildman

发明人： Yun-Yu Wang ,  Rajarao Jammy ,  Lee J. Kimball ,  David E. Kotecki ,  Jenny Lian ,  Chenting Lin ,  John A. Miller ,  Nicholas Nagel ,  Hua Shen ,  Horatio S. Wildman

IPC分类号： H01L2120

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/60

摘要： A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

摘要翻译： 一种电容器结构，其包括顶部铂电极和在电极的侧壁上具有绝缘体的底部电极，并且其中底部电极从沉积相对于绝缘体在其侧壁上凹进的第一电极部分并且沉积第二绝缘体 提供部分。

公开(公告)号：US06207584B1

公开(公告)日：2001-03-27

申请号：US09478270

申请日：2000-01-05

申请人： Hua Shen ,  David E. Kotecki ,  Robert Laibowitz ,  Katherine Lynn Saenger ,  Satish D. Athavale ,  Jenny Lian ,  Martin Gutsche ,  Yun-Yu Wang ,  Thomas Shaw

发明人： Hua Shen ,  David E. Kotecki ,  Robert Laibowitz ,  Katherine Lynn Saenger ,  Satish D. Athavale ,  Jenny Lian ,  Martin Gutsche ,  Yun-Yu Wang ,  Thomas Shaw

IPC分类号： H01L2131

CPC分类号： H01L28/56 ,  H01L21/31691 ,  H01L28/90

摘要： A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.

摘要翻译： 形成电介质层的方法包括在第一温度下将表面暴露于气态的第一电介质材料。 在表面上形成第一介电材料的核。 通过使用核作为种子用于层生长，在表面上沉积第二介电材料层，其中沉积在大于第一温度的第二温度下进行。

公开(公告)号：US07002196B2

公开(公告)日：2006-02-21

申请号：US10713239

申请日：2003-11-13

申请人： Andreas Hilliger ,  Jenny Lian

发明人： Andreas Hilliger ,  Jenny Lian

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the substrate. A spacer layer is formed on the first interlayer dielectric layer, a first oxygen barrier layer is formed on the spacer layer and a buffer layer is formed on the first oxygen barrier layer. A layer of liner material is formed on the buffer layer between the buffer layer and the contact plugs and a dielectric layer is sandwiched between a first electrode and a second electrode. A second oxygen barrier layer is applied to the device. The spacer layer should prevent any oxidation from reaching the interface between the liner material and the contact plugs as this interface is located beneath the first oxygen barrier layer. As a result, the electrical contact is not damaged.

摘要翻译： 诸如FeRAM器件的铁电电容器器件由具有延伸穿过其中的一个或多个接触插塞的衬底和形成在衬底上的第一层间电介质层形成。 在第一层间电介质层上形成间隔层，在间隔层上形成第一氧阻隔层，在第一氧阻隔层上形成缓冲层。 在缓冲层和接触塞之间的缓冲层上形成一层衬垫材料，并且介电层夹在第一电极和第二电极之间。 将第二氧阻挡层施加到该装置。 当该界面位于第一氧阻隔层下方时，间隔层应防止任何氧化到达衬垫材料和接触塞之间的界面。 因此，电气接触不会损坏。

公开(公告)号：US20050067649A1

公开(公告)日：2005-03-31

申请号：US10672306

申请日：2003-09-26

申请人： Jenny Lian ,  Ulrich Egger ,  Haoren Zhuang

发明人： Jenny Lian ,  Ulrich Egger ,  Haoren Zhuang

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L28/60 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/75

摘要： A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.

摘要翻译： 一种制造器件和器件的方法，例如铁电电容器，具有衬底，通过衬底的接触插塞，衬底上的第一阻挡层，第一阻挡层上的第一电极，第一阻挡层上的电介质层 电极和第二电极，包括使用第一硬掩模蚀刻该器件的第二电极和介电层，以使第二电极和电介质层成型。 然后去除第一硬掩模，并且将一个或多个封装层施加到第二电极和电介质层。 另外的硬掩模应用于一个或多个封装层。 然后根据第二硬掩模将第一电极蚀刻到第一阻挡层，然后从一个或多个封装层移除第二硬掩模。

公开(公告)号：US20050051819A1

公开(公告)日：2005-03-10

申请号：US10655757

申请日：2003-09-05

申请人： Bum-Ki Moon ,  Karl Hornik ,  Haoren Zhuang ,  Ulrich Egger ,  Jenny Lian ,  Andreas Hilliger

发明人： Bum-Ki Moon ,  Karl Hornik ,  Haoren Zhuang ,  Ulrich Egger ,  Jenny Lian ,  Andreas Hilliger

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/08 ,  H01L29/76

CPC分类号： H01L28/57 ,  H01L27/0805 ,  H01L27/11507

摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.

摘要翻译： 铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极 层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。 一个或多个第二封装层可以形成在一个或多个储氢材料层上。

公开(公告)号：US06365328B1

公开(公告)日：2002-04-02

申请号：US09522883

申请日：2000-03-10

申请人： Hua Shen ,  David Kotecki ,  Satish Athavale ,  Jenny Lian ,  Laertis Economikos ,  Fen F. Jamin ,  Gerhard Kunkel ,  Nirmal Chaudhary

发明人： Hua Shen ,  David Kotecki ,  Satish Athavale ,  Jenny Lian ,  Laertis Economikos ,  Fen F. Jamin ,  Gerhard Kunkel ,  Nirmal Chaudhary

IPC分类号： G03F700

CPC分类号： H01L21/7687 ,  H01L21/76885 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A method for forming an electrode. The method includes forming a conductive plug through a first dielectric layer. The plug extends from an upper surface of the first dielectric layer to a contact region in a semiconductor substrate. The electrode is formed photolithographically, misalignment of a mask registration in the photolithography resulting in exposing surface portions of the barrier contact. A second dielectric layer is deposited over the first dielectric layer, over side portions and top portions of the formed electrode, and over the exposed portions of barrier contact. A sacrificial material is provided on portions of the second dielectric layer disposed on lower sides of the, electrode, on portions of the second dielectric layer disposed on the first dielectric layer, and on said exposed portions of the barrier contact while exposing portions of the second dielectric layer on the top portions and upper side portions of the formed electrode. The exposed portions of the second dielectric layer are removed while leaving the portions of the second dielectric layer on the exposed portions of the barrier contact. A material is deposited over exposed portions of the first electrode and over remaining portions of the second dielectric layer in an oxidizing environment. A second electrode is formed for the storage element over the material. In forming a capacitor storage element, the portion of the second dielectric layer on the barrier contact prevents oxidation of the barrier contact during the material formation process.

摘要翻译： 一种形成电极的方法。 该方法包括通过第一电介质层形成导电插塞。 插头从第一电介质层的上表面延伸到半导体衬底中的接触区域。 光刻地形成电极，光刻中的掩模配准不对准，导致暴露屏障接触的表面部分。 第二电介质层沉积在第一电介质层上，在形成的电极的侧面部分和顶部上方以及屏蔽接触的暴露部分之上。 在设置在第一电介质层上的第二电介质层的部分上的第二电介质层的设置在电极的下侧的部分上以及在屏障接触的所述暴露部分上暴露第二电介质层的部分的牺牲材料 在形成的电极的顶部和上侧部分上的介电层。 第二介电层的暴露部分被去除，同时将第二介电层的部分留在屏障接触的暴露部分上。 材料在氧化环境中沉积在第一电极的暴露部分和第二电介质层的剩余部分上。 在材料上形成用于存储元件的第二电极。 在形成电容器存储元件时，屏障接触部分的第二电介质层在材料形成过程中防止了屏障接触的氧化。

公开(公告)号：US08518820B2

公开(公告)日：2013-08-27

申请号：US13301196

申请日：2011-11-21

申请人： Roberto Schiwon ,  Klaus Herold ,  Jenny Lian ,  Sajan Marokkey ,  Martin Ostermayr

发明人： Roberto Schiwon ,  Klaus Herold ,  Jenny Lian ,  Sajan Marokkey ,  Martin Ostermayr

IPC分类号： H01L21/4763

CPC分类号： H01L27/105 ,  G03F1/00 ,  G03F7/0035 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/1116

摘要： Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.

摘要翻译： 描述了用于在设备中形成触点的掩模套，布局设计和方法。 在一个实施例中，半导体器件包括设置在衬底上的多个触点，多个触点被布置为正交格栅上的行和列，多个触点的每一行与多个触点的相邻行间隔开 并且所述多个触点中的每一列与所述多个触点的相邻列间隔开第二距离。