公开(公告)号：US09899538B1

公开(公告)日：2018-02-20

申请号：US15591126

申请日：2017-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Lung Chang ,  Tien-Fan Ou

IPC: H01L27/115 ,  H01L29/788 ,  H01L27/11521 ,  H01L29/417 ,  G11C16/14 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04

CPC classification number: H01L29/7884 ,  G11C16/0408 ,  G11C16/0416 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C2216/04 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/41775 ,  H01L29/42328

Abstract: The present invention provides a non-volatile memory device, including a source region and a drain region, a channel region, a floating gate, an enhance hot carrier (hole or electron) injection gate and an erasing gate. The floating gate is disposed on the channel region and the source region and a first dielectric layer is disposed therebetween. The enhance hot carrier injection gate is disposed on the floating gate and the substrate wherein the enhance hot carrier injection gate has an L-shape cross-section. A second dielectric layer is disposed between the enhance hot carrier injection gate and the floating gate, and a fourth dielectric layer is disposed between the enhance hot carrier injection gate and the substrate. The erasing gate is disposed on the drain region. A third dielectric layer is disposed between the erasing gate and the substrate.

公开(公告)号：US20150008504A1

公开(公告)日：2015-01-08

申请号：US13935570

申请日：2013-07-05

Applicant: United Microelectronics Corp.

Inventor： Chun-Lung Chang ,  Tzu-Ping Chen ,  Chih-Haw Lee ,  Kuan-Yi Tseng ,  Chih-Jung Chen ,  Chien-Hung Chen

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/66833 ,  H01L29/40117 ,  H01L29/42348 ,  H01L29/7923

Abstract: A non-volatile memory structure includes a substrate, a gate electrode formed on the substrate, conductive spacers respectively formed on two sides of the gate electrode, and an oxide-nitride-oxide (ONO) structure having an inverted T shape formed on the substrate. The gate electrode includes a gate conductive layer and a gate dielectric layer. The ONO structure includes a base portion and a body portion. The base portion of the ONO structure is sandwiched between the gate electrode and the substrate, and between the conductive spacer and the substrate. The body portion of the T-shaped ONO structure is upwardly extended from the base portion and sandwiched between the gate electrode and the conductive spacer.

Abstract translation: 非易失性存储器结构包括：衬底，形成在衬底上的栅极电极，分别形成在栅电极的两侧上的导电衬垫和在衬底上形成有倒T形的氧化物 - 氧化物（ONO）结构 。 栅电极包括栅极导电层和栅极电介质层。 ONO结构包括基部和主体部分。 ONO结构的基部被夹在栅电极和衬底之间以及导电间隔物和衬底之间。 T形ONO结构的主体部分从基部向上延伸并夹在栅电极和导电间隔件之间。

公开(公告)号：US09349815B2

公开(公告)日：2016-05-24

申请号：US14488295

申请日：2014-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Yi Tseng ,  Tzu-Ping Chen ,  Chun-Lung Chang ,  Chih-Haw Lee ,  Wei-Shiang Huang ,  Chien-Hung Chen

IPC: H01L21/336 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/42368 ,  H01L21/28035 ,  H01L21/28158 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833

Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Abstract translation: 提供了栅极结构。 栅极结构包括衬底，设置在衬底上的栅极和设置在衬底和栅极之间的栅极电介质层，其中栅极电介质层为杠铃形状。 杠铃具有连接到两个凸起端的薄中心。 凸出部分的一部分延伸到栅极和衬底中。

公开(公告)号：US20160079380A1

公开(公告)日：2016-03-17

申请号：US14488295

申请日：2014-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Yi Tseng ,  Tzu-Ping Chen ,  Chun-Lung Chang ,  Chih-Haw Lee ,  Wei-Shiang Huang ,  Chien-Hung Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42368 ,  H01L21/28035 ,  H01L21/28158 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833

Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Abstract translation: 提供了栅极结构。 栅极结构包括衬底，设置在衬底上的栅极和设置在衬底和栅极之间的栅极电介质层，其中栅极电介质层为杠铃形状。 杠铃具有连接到两个凸起端的薄中心。 凸出部分的一部分延伸到栅极和衬底中。