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    InA1As etch stop layer for precise semiconductor waveguide fabrication
    3.
    发明授权
    InA1As etch stop layer for precise semiconductor waveguide fabrication 有权
    InA1As蚀刻停止层，用于精确的半导体波导制造

    公开(公告)号：US06376272B1

    公开(公告)日：2002-04-23

    申请号：US09588427

    申请日：2000-06-06

    申请人： Aaron Eugene Bond ,  Abdallah Ougazzaden ,  Gleb E. Shtengel

    发明人： Aaron Eugene Bond ,  Abdallah Ougazzaden ,  Gleb E. Shtengel

    IPC分类号： H01L2100

    CPC分类号： G02B6/10 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097 ,  H01S5/209

    摘要： A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH4/H2 etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

    摘要翻译： 半导体波导器件及其形成方法提供作为蚀刻停止层的InAlAs膜。 InAlAs膜不会在用于使用反应离子蚀刻技术制造器件的CH4 / H2蚀刻化学中蚀刻。 蚀刻工艺蚀刻在InAlAs层上形成的波导层和包覆层，并暴露InAlAs蚀刻停止膜以产生具有期望物理特性的波导器件。

    Apparatus and method for minimizing wavelength chirp of laser devices
    5.
    发明授权
    Apparatus and method for minimizing wavelength chirp of laser devices 有权
    最小化激光器件波长啁啾的装置和方法

    公开(公告)号：US06678301B1

    公开(公告)日：2004-01-13

    申请号：US09616537

    申请日：2000-07-14

    申请人： Lars E. Eng ,  Robert Louis Hartman ,  Gleb E. Shtengel ,  Daniel Paul Wilt

    发明人： Lars E. Eng ,  Robert Louis Hartman ,  Gleb E. Shtengel ,  Daniel Paul Wilt

    IPC分类号： H01S319

    CPC分类号： H01S5/06256 ,  H01S5/028 ,  H01S5/0427 ,  H01S5/2004 ,  H01S5/2063

    摘要： An improved semiconductor laser (distributed feedback or Bragg reflector laser) is disclosed, having reducing wavelength chirping. In a laser having a substrate, an optical waveguide layer disposed on the substrate with a grating region, and a cladding region disposed on the optical waveguide layer, an isolation region is positioned in at least one of the substrate, optical waveguide layer, and cladding layer. The isolation region is comprised of a material adapted to increase the resistivity of the one or more layers in which it is placed to reduce electrical cross-talk and wavelength chirping. Preferably, the isolation region is positioned in at least the cladding layer, which the inventors have found is the greatest contributor of cross-talk and wavelength chirping.

    摘要翻译： 公开了一种改进的半导体激光器（分布式反馈或布拉格反射激光器），其具有减少的波长啁啾。 在具有基板的激光器中，设置在具有光栅区域的基板上的光波导层和设置在光波导层上的包层区域，隔离区域位于基板，光波导层和包层中的至少一个 层。 隔离区域由适于增加其放置的一个或多个层的电阻率的材料组成，以减少电串扰和波长线性调频。 优选地，隔离区位于至少包层中，发明人已经发现它是串扰和波长啁啾的最大贡献者。

    Asymmetric inductive peaking for optoelectronic devices
    7.
    发明授权
    Asymmetric inductive peaking for optoelectronic devices 有权
    光电器件的非对称电感峰值

    公开(公告)号：US6057954A

    公开(公告)日：2000-05-02

    申请号：US157239

    申请日：1998-09-18

    申请人： Padman Parayanthal ,  Gleb E. Shtengel

    发明人： Padman Parayanthal ,  Gleb E. Shtengel

    IPC分类号： G02B6/42 ,  G02F1/03 ,  H01S5/02 ,  H01S5/042 ,  H01S5/062 ,  G02B6/12 ,  G02B26/00 ,  H01S3/00

    CPC分类号： G02F1/0327 ,  G02B6/4274 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/0427 ,  H01S5/06226

    摘要： An optoelectronic device, such as an electro-absorption modulator laser (EML), is configured to a submount using an asymmetric inductive peaking scheme in which a first wire connects a modulator signal electrode on the submount to the modulator contact pad on the device and a second wire connects the modulator contact pad to an integrated resistor on the submount, where the first and second wires have substantially different inductances. Such asymmetric inductive peaking improves the high-frequency performance of the resulting packaged device by providing a higher transmission coefficient and a lower return loss at high frequencies than devices configured using conventional symmetric inductive peaking in which the inductances of the two connecting wires are purposely designed to be equal. In one embodiment, in which the device will be modulated by a standard 50-ohm electrical signal generator, the integrated resistor is a 50-ohm device, the first wire is kept as short as practicable (e.g., about 0.3 mm) and the second wire is made as long as practicable (e.g., about 1.5 mm). The resulting packaged devices show good high-frequency performance for a wide range of device parameters.

    摘要翻译： 诸如电吸收式调制器激光器（EML）的光电子器件使用不对称的感应峰化方案被配置为基座，其中第一线将子基座上的调制器信号电极连接到器件上的调制器接触焊盘，以及 第二导线将调制器接触焊盘连接到底座上的集成电阻器，其中第一和第二导线具有基本上不同的电感。 这种不对称的感应峰值通过在高频下提供更高的透射系数和较低的回波损耗来提高所得封装器件的高频性能，而不是使用传统的对称感应峰值配置的器件，其中两个连接线的电感有意设计成 等于。 在其中器件将被标准的50欧姆电信号发生器调制的一个实施例中，集成电阻器是50欧姆的器件，第一条电线被保持尽可能短（例如，约0.3mm），而第二条电线 电线是尽可能长的（例如，约1.5毫米）。 所产生的封装器件对于广泛的器件参数显示出良好的高频性能。