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公开(公告)号：US12049695B2
公开(公告)日：2024-07-30
申请号：US16134410
申请日：2018-09-18
Applicant: Versum Materials US, LLC
Inventor： Raymond Nicholas Vrtis , William Robert Entley , Robert Gordon Ridgeway , Xinjian Lei , John Francis Lehmann , Manchao Xiao
CPC classification number: C23C16/401 , C23C16/345 , C23C16/36 , C23C16/48 , C23C16/50 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/02348
Abstract: Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.
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公开(公告)号：US20220157601A1
公开(公告)日：2022-05-19
申请号：US17586405
申请日：2022-01-27
Applicant: Versum Materials US, LLC
Inventor： Jianheng Li , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Manchao Xiao , Xinjian Lei
IPC: H01L21/02 , C09D7/61 , C23C16/04 , C23C16/40 , C01B33/12 , C07F7/18 , C09D1/00 , C23C16/50 , C23C16/56
Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.
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公开(公告)号：US11043374B2
公开(公告)日：2021-06-22
申请号：US16549634
申请日：2019-08-23
Applicant: Versum Materials US, LLC
Inventor： Manchao Xiao , Robert Gordon Ridgeway , Daniel P. Spence , Xinjian Lei , Raymond Nicholas Vrtis
Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
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公开(公告)号：US20190292658A1
公开(公告)日：2019-09-26
申请号：US16062935
申请日：2016-12-21
Applicant: Versum Materials US, LLC
Inventor： Jianheng Li , Xinjian Lei , Robert Gordon Ridgeway , Raymond Nicholas Vrtis , Manchao Xiao , Richard Ho
Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.
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公开(公告)号：US20190055645A1
公开(公告)日：2019-02-21
申请号：US16079672
申请日：2017-02-22
Applicant: VERSUM MATERIALS US, LLC
Inventor： Jianheng Li , Xinjian Lei , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Dino Sinatore , Manchao Xiao
IPC: C23C16/32 , C23C16/36 , C23C16/513
Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.
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Patent Agency Ranking
公开(公告)号：US20190017167A1
公开(公告)日：2019-01-17
申请号：US16134410
申请日：2018-09-18
Applicant: Versum Materials US, LLC
Inventor： Raymond Nicholas Vrtis , William Robert Entley , Robert Gordon Ridgeway , Xinjian Lei , John Francis Lehmann , Manchao Xiao
Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.
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公开(公告)号：US20200048286A1
公开(公告)日：2020-02-13
申请号：US16657105
申请日：2019-10-18
Applicant: VERSUM MATERIALS US, LLC
Inventor： Manchao Xiao , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , William Robert Entley , Jennifer Lynn Anne Achtyl , Xinjian Lei , Daniel P. Spence
Abstract: A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.
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公开(公告)号：US20180315598A1
公开(公告)日：2018-11-01
申请号：US16004907
申请日：2018-06-11
Applicant: Versum Materials US, LLC
Inventor： Jianheng Li , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Manchao Xiao , Xinjian Lei
IPC: H01L21/02 , C01B33/113 , C07F7/18 , C09D1/00
Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.
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9.发明申请公开(公告)号：US20180277360A1
公开(公告)日：2018-09-27
申请号：US15954906
申请日：2018-04-17
Applicant: Versum Materials US, LLC
Inventor： Jianheng Li , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Xinjian Lei , Mark Leonard O'Neill , Xuezhong Jiang
IPC: H01L21/02 , H01L21/768 , H01L21/3105 , C23C16/40 , C23C16/455
CPC classification number: H01L21/02126 , C23C16/401 , C23C16/45542 , C23C16/45553 , H01L21/02211 , H01L21/02214 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/3105 , H01L21/76826 , H01L21/76829 , H01L21/76831
Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.
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10.发明申请公开(公告)号：US20200075323A1
公开(公告)日：2020-03-05
申请号：US16549634
申请日：2019-08-23
Applicant: Versum Materials US, LLC
Inventor： Manchao Xiao , Robert Gordon Ridgeway , Daniel P. Spence , Xinjian Lei , Raymond Nicholas Vrtis
IPC: H01L21/02
Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
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