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公开(公告)号：US20240103377A1
公开(公告)日：2024-03-28
申请号：US17754816
申请日：2020-10-15
发明人： CHAO-HSIANG CHEN , CHUNG-YI CHANG , YI-CHIA LEE , WEN DAR LIU
IPC分类号： G03F7/42 , G03F7/20 , H01L21/033
CPC分类号： G03F7/423 , G03F7/2004 , G03F7/426 , H01L21/0332
摘要： A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.
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公开(公告)号：US20220367199A1
公开(公告)日：2022-11-17
申请号：US17622670
申请日：2020-03-10
发明人： CHUNG YI CHANG , WEN DAR LIU , YI-CHIA LEE
IPC分类号： H01L21/306 , C09K13/06
摘要： Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.
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公开(公告)号：US20240271040A1
公开(公告)日：2024-08-15
申请号：US18561030
申请日：2022-04-26
发明人： WEN DAR LIU , YI-CHIA LEE , AIPING WU
IPC分类号： C09K13/08 , H01L21/306
CPC分类号： C09K13/08 , H01L21/30604
摘要： The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at least one silane silicon oxide etch inhibitor and (vii) optionally at least one water-miscible organic solvent. The solutions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.
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公开(公告)号：US20240010915A1
公开(公告)日：2024-01-11
申请号：US17905340
申请日：2021-03-02
发明人： CHAO-HSIANG CHEN , JHIH KUEI GE , YI-CHIA LEE , WEN DAR LIU
IPC分类号： C09K13/08 , C23F1/26 , H01L21/311 , H01L21/3213
CPC分类号： C09K13/08 , C23F1/26 , H01L21/31111 , H01L21/32134
摘要： Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.
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公开(公告)号：US20220243150A1
公开(公告)日：2022-08-04
申请号：US17596199
申请日：2020-06-15
发明人： LILI WANG , AIPING WU , LAISHENG SUN , YI-CHIA LEE , YUANMEI CAO
摘要： Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.
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公开(公告)号：US20240047196A1
公开(公告)日：2024-02-08
申请号：US18254467
申请日：2021-11-30
发明人： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC分类号： H01L21/02 , C23C16/02 , C23C16/04 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/0254 , C23C16/04 , C23C16/45525
摘要： A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.
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公开(公告)号：US20220380705A1
公开(公告)日：2022-12-01
申请号：US17753256
申请日：2020-09-24
发明人： LAISHENG SUN , LILI WANG , AIPING WU , YI-CHIA LEE , TIANNIU CHEN
摘要： A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.
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公开(公告)号：US20220298417A1
公开(公告)日：2022-09-22
申请号：US17596078
申请日：2020-06-12
发明人： Wen Dar Liu , YI-CHIA LEE , CHUNG-YI CHANG , AIPING WU , LAISHENG SUN
IPC分类号： C09K13/06 , H01L21/311 , H01L21/3213
摘要： Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at least one compound selected from benzoquinone or a derivative of benzoquinone; quinoline or a derivative of quinoline; an unsubstituted or substituted C6-20 aliphatic acid; a C4-12 alkylamine; and a polyalkylenimine; optionally at least one water-miscible organic solvent; and optionally, at least one compound selected from an alkanolamine and a polyamine.
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公开(公告)号：US20220228062A1
公开(公告)日：2022-07-21
申请号：US17656828
申请日：2022-03-28
发明人： Jhih Kuei Ge , YI-CHIA LEE , WEN DAR LIU , AIPING WU , LAISHENG SUN
IPC分类号： C09K13/06 , H01L21/311
摘要： The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
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公开(公告)号：US20240014036A1
公开(公告)日：2024-01-11
申请号：US18254477
申请日：2021-11-30
发明人： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02274
摘要： A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.
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