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公开(公告)号：US20220301862A1
公开(公告)日：2022-09-22
申请号：US17642185
申请日：2020-09-10
发明人： MANCHAO XIAO , WILLIAM ROBERT ENTLEY , DANIEL P. SPENCE , RAYMOND NICHOLAS VRTIS , JENNIFER LYNN ANNE ACHTYL , ROBERT GORDON RIDGEWAY , XINJIAN LEI
IPC分类号： H01L21/02 , C23C16/40 , C23C16/513
摘要： A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.
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公开(公告)号：US20230386825A1
公开(公告)日：2023-11-30
申请号：US18249831
申请日：2021-10-20
发明人： MANCHAO XIAO , DANIEL P. SPENCE , XINJIAN LEI , WILLIAM ROBERT ENTLEY , RAYMOND NICHOLAS VRTIS , JENNIFER LYNN ANNE ACHTYL , ROBERT GORDON RIDGEWAY
IPC分类号： H01L21/02 , C08G77/12 , C09D183/04 , C07F7/08
CPC分类号： H01L21/02126 , H01L21/02271 , H01L21/02274 , C07F7/0896 , C08G77/12 , C09D183/04 , C07F7/0838 , H01L21/02216
摘要： A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.50 to ˜3.30, an elastic modulus of from ˜6 to ˜35 GPa, and an at. % carbon of from ˜10 to ˜40 as measured by XPS.
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公开(公告)号：US20220293417A1
公开(公告)日：2022-09-15
申请号：US17635984
申请日：2020-08-14
发明人： RAYMOND NICHOLAS VRTIS , SURESH K. RAJARAMAN , WILLIAM ROBERT ENTLEY , JENNIFER LYNN ANNE ACHTYL , ROBERT GORDON RIDGEWAY
摘要： A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the formula RnH4-nSi as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.
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公开(公告)号：US20240240309A1
公开(公告)日：2024-07-18
申请号：US18561833
申请日：2022-05-16
发明人： WILLIAM ROBERT ENTLEY , JENNIFER LYNN ANNE ACHTYL , XINJIAN LEI , MANCHAO XIAO , ROBERT GORDON RIDGEWAY , RAYMOND NICHOLAS VRTIS , DANIEL P. SPENCE
IPC分类号： C23C16/40 , C23C16/505
CPC分类号： C23C16/402 , C23C16/505
摘要： A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜32 GPa, and an at. % carbon from ˜10 to ˜35 as measured by XPS.
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公开(公告)号：US20240047196A1
公开(公告)日：2024-02-08
申请号：US18254467
申请日：2021-11-30
发明人： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC分类号： H01L21/02 , C23C16/02 , C23C16/04 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/0254 , C23C16/04 , C23C16/45525
摘要： A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.
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6.发明公开公开(公告)号：US20240182499A1
公开(公告)日：2024-06-06
申请号：US18409373
申请日：2024-01-10
发明人： ROBERT GORDON RIDGEWAY , RAYMOND NICHOLAS VRTIS , XINJIAN LEI , JENNIFER LYNN ANNE ACHTYL , WILLIAM ROBERT ENTLEY
IPC分类号： C07F7/18 , C23C16/40 , C23C16/448 , C23C16/517 , C23C16/56 , H01L21/02
CPC分类号： C07F7/1896 , C23C16/401 , C23C16/4488 , C23C16/517 , C23C16/56 , H01L21/02203 , H01L21/02214 , H01L21/02274
摘要： A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
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公开(公告)号：US20220388033A1
公开(公告)日：2022-12-08
申请号：US17752531
申请日：2022-05-24
发明人： ROBERT GORDON RIDGEWAY , MANCHAO XIAO , JENNIFER LYNN ANNE ACHTYL , DANIEL P. SPENCE , WILLIAM R. ENTLEY
摘要： A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dialkyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dialkyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dialkyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜36 GPa, and an at. % carbon from ˜10 to ˜36 as measured by XPS.
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公开(公告)号：US20240052490A1
公开(公告)日：2024-02-15
申请号：US17641792
申请日：2020-09-11
发明人： MANCHAO XIAO , WILLIAM ROBERT ENTLEY , DANIEL P. SPENCE , RAYMOND NICHOLAS VRTIS , JENNIFER LYNN ANNE ACHTYL , ROBERT GORDON RIDGEWAY , XINJIAN LEI
CPC分类号： C23C16/50 , C23C16/4414 , C23C16/402 , B05D1/62
摘要： A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.
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公开(公告)号：US20240014036A1
公开(公告)日：2024-01-11
申请号：US18254477
申请日：2021-11-30
发明人： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02274
摘要： A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.
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公开(公告)号：US20230279030A1
公开(公告)日：2023-09-07
申请号：US18006659
申请日：2021-07-23
发明人： FORREST GLENN BROWN , RAYMOND NICHOLAS VRTIS , ROBERT GORDON RIDGEWAY , MANCHAO XIAO , SURESH KALPATTU RAJARAMAN , DANIEL P. SPENCE
IPC分类号： C07F7/21 , C23C16/511 , C23C16/24
CPC分类号： C07F7/21 , C23C16/511 , C23C16/24
摘要： A composition useful in depositing low dielectric constant (low-k) insulating materials into high aspect ratio gaps, trenches, vias, and other surface features, of semiconductor devices by a plasma-enhanced chemical vapor deposition (PECVD) process is disclosed. The composition may comprise an alkoxy-functionalized cyclosiloxane derived from trimethylcyclotrisiloxane, tetramethylcyclotetrasiloxane, or pentamethylcyclopentasiloxane. The alkoxy-functionalization may comprise between 1 and 10 carbon atoms. A method of depositing the alkoxy-functionalized cyclosiloxane composition by a PECVD process is also disclosed. Finally, a film comprising a flowable liquid, or oligomer, comprising the oligomerized, or polymerized, alkoxy-functionalized cyclosiloxane composition, on a substrate is disclosed.
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