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    SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICONDUCTOR DEVICES ON A COMMON SUBSTRATE
    3.
    发明申请
    SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICONDUCTOR DEVICES ON A COMMON SUBSTRATE 有权
    具有普通基底上的两个元素和化合物半导体器件的半导体结构

    公开(公告)号：US20100295104A1

    公开(公告)日：2010-11-25

    申请号：US12470633

    申请日：2009-05-22

    申请人： Valery S. Kaper ,  John P. Bettencourt ,  Jeffrey R. LaRoche ,  Kamal Tabatabaie

    发明人： Valery S. Kaper ,  John P. Bettencourt ,  Jeffrey R. LaRoche ,  Kamal Tabatabaie

    IPC分类号： H01L29/78

    CPC分类号： H01L29/78 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/1203 ,  H01L29/12

    摘要： A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed layer is electrically insulated from the second portion of the seed layer. A first semiconductor device is formed in the elemental semiconductor layer. A second semiconductor device is formed in the compound semiconductor layer. The second semiconductor device includes: a first electrode in contact with a first region of the compound semiconductor layer; a second electrode in contact with a second region of the compound semiconductor layer; and a third electrode. The third electrode controls carriers passing in a third region of the compound semiconductor layer disposed between the first region and the second region. A fourth electrode is in electrical contact with the second portion of the seed layer.

    摘要翻译： 一种半导体结构，包括：基板; 由基底支撑的种子层; 设置在种子层的第一部分上的元素半导体层; 以及配置在种子层的第二部分上的化合物半导体层。 种子层的第一部分与种子层的第二部分电绝缘。 在元素半导体层中形成第一半导体器件。 在化合物半导体层中形成第二半导体器件。 第二半导体器件包括：与化合物半导体层的第一区域接触的第一电极; 与所述化合物半导体层的第二区域接触的第二电极; 和第三电极。 第三电极控制通过设置在第一区域和第二区域之间的化合物半导体层的第三区域中的载流子。 第四电极与种子层的第二部分电接触。

    Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
    5.
    发明授权
    Semiconductor structures having both elemental and compound semiconductor devices on a common substrate 有权
    半导体结构在公共衬底上具有元件和复合半导体器件

    公开(公告)号：US07994550B2

    公开(公告)日：2011-08-09

    申请号：US12470633

    申请日：2009-05-22

    申请人： Valery S. Kaper ,  John P. Bettencourt ,  Jeffrey R. LaRoche ,  Kamal Tabatabaie

    发明人： Valery S. Kaper ,  John P. Bettencourt ,  Jeffrey R. LaRoche ,  Kamal Tabatabaie

    IPC分类号： H01L21/02

    CPC分类号： H01L29/78 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/1203 ,  H01L29/12

    摘要： A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed layer is electrically insulated from the second portion of the seed layer. A first semiconductor device is formed in the elemental semiconductor layer. A second semiconductor device is formed in the compound semiconductor layer. The second semiconductor device includes: a first electrode in contact with a first region of the compound semiconductor layer; a second electrode in contact with a second region of the compound semiconductor layer; and a third electrode. The third electrode controls carriers passing in a third region of the compound semiconductor layer disposed between the first region and the second region. A fourth electrode is in electrical contact with the second portion of the seed layer.

    摘要翻译： 一种半导体结构，包括：基板; 由基底支撑的种子层; 设置在种子层的第一部分上的元素半导体层; 以及配置在种子层的第二部分上的化合物半导体层。 种子层的第一部分与种子层的第二部分电绝缘。 在元素半导体层中形成第一半导体器件。 在化合物半导体层中形成第二半导体器件。 第二半导体器件包括：与化合物半导体层的第一区域接触的第一电极; 与所述化合物半导体层的第二区域接触的第二电极; 和第三电极。 第三电极控制通过设置在第一区域和第二区域之间的化合物半导体层的第三区域中的载流子。 第四电极与种子层的第二部分电接触。

    Digital to analog converter (DAC) having high dynamic range
    6.
    发明授权
    Digital to analog converter (DAC) having high dynamic range 有权
    具有高动态范围的数模转换器（DAC）

    公开(公告)号：US08154432B2

    公开(公告)日：2012-04-10

    申请号：US12728749

    申请日：2010-03-22

    申请人： Valery S. Kaper ,  John P. Bettencourt

    发明人： Valery S. Kaper ,  John P. Bettencourt

    IPC分类号： H03M1/10

    CPC分类号： H03M1/1052 ,  H03M1/66

    摘要： A system having: a digital pre-distortion circuit fed by a digital signal for distorting the digital signal; a digital to analog converter (DAC) core section coupled to an output of the calibration circuit for converting the distorted digital signal into a corresponding analog signal, the DAC core section performing the conversion in accordance with a control signal fed to the DAC core section; a power amplifier (PA) section coupled to an output of the DAC core section for amplifying power in the analog signal; and a calibration circuit coupled to the output of the power amplifier for producing, in response to the power in the power amplified analog signal, the control signal for the DAC core section.

    摘要翻译： 一种具有：数字预失真电路的数字预失真电路，由数字信号馈送以扭曲数字信号; 耦合到所述校准电路的输出的数模转换器（DAC）核心部分，用于将失真的数字信号转换成对应的模拟信号，所述DAC核部分根据馈送到所述DAC核心部分的控制信号执行转换; 功率放大器（PA）部分，耦合到DAC核心部分的输出端，用于放大模拟信号的功率; 以及耦合到所述功率放大器的输出的校准电路，用于响应于功率放大模拟信号中的功率而产生用于DAC核心部分的控制信号。

    DIGITAL-TO-ANALOG CONVERTER (DAC)
    7.
    发明申请
    DIGITAL-TO-ANALOG CONVERTER (DAC) 有权
    数模转换器（DAC）

    公开(公告)号：US20110227770A1

    公开(公告)日：2011-09-22

    申请号：US12728749

    申请日：2010-03-22

    申请人： Valery S. Kaper ,  John P. Bettencourt

    发明人： Valery S. Kaper ,  John P. Bettencourt

    IPC分类号： H03M1/66 ,  H03M1/10

    CPC分类号： H03M1/1052 ,  H03M1/66

    摘要： A system having: a digital pre-distortion circuit fed by a digital signal for distorting the digital signal; a digital to analog converter (DAC) core section coupled to an output of the calibration circuit for converting the distorted digital signal into a corresponding analog signal, the DAC core section performing the conversion in accordance with a control signal fed to the DAC core section; a power amplifier (PA) section coupled to an output of the DAC core section for amplifying power in the analog signal; and a calibration circuit coupled to the output of the power amplifier for producing, in response to the power in the power amplified analog signal, the control signal for the DAC core section.

    摘要翻译： 一种具有：数字预失真电路的数字预失真电路，由数字信号馈送以扭曲数字信号; 耦合到所述校准电路的输出的数模转换器（DAC）核心部分，用于将失真的数字信号转换成对应的模拟信号，所述DAC核部分根据馈送到所述DAC核心部分的控制信号执行转换; 功率放大器（PA）部分，耦合到DAC核心部分的输出端，用于放大模拟信号的功率; 以及耦合到所述功率放大器的输出的校准电路，用于响应于功率放大模拟信号中的功率而产生用于DAC核心部分的控制信号。

    Thermoelectric bias voltage generator
    9.
    发明授权
    Thermoelectric bias voltage generator 有权
    热电偏压发生器

    公开(公告)号：US08816184B2

    公开(公告)日：2014-08-26

    申请号：US11291371

    申请日：2005-12-01

    申请人： John P. Bettencourt

    发明人： John P. Bettencourt

    IPC分类号： H01L35/30 ,  G05F3/20

    CPC分类号： G05F3/205

    摘要： A thermoelectric bias voltage generator having a substrate, an active device formed in a semiconductor region of the substrate, and a thermoelectric junction disposed on the substrate and connected to the active device to provide the bias voltage for the active device.

    摘要翻译： 一种具有衬底，形成在衬底的半导体区域中的有源器件以及设置在衬底上并与有源器件连接以提供有源器件的偏置电压的热电结的热电偏压产生器。

    TRANSISTOR HAVING THERMO ELECTRON COOLING
    10.
    发明申请
    TRANSISTOR HAVING THERMO ELECTRON COOLING 有权
    具有热电子冷却的晶体管

    公开(公告)号：US20110248280A1

    公开(公告)日：2011-10-13

    申请号：US12757590

    申请日：2010-04-09

    申请人： John P. Bettencourt ,  Nicholas J. Kolias

    发明人： John P. Bettencourt ,  Nicholas J. Kolias

    IPC分类号： H01L29/12 ,  H01L23/373

    CPC分类号： H01L29/8128 ,  H01L23/38 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure having a transistor and a thermo electronic structure. The transistor has a control electrode for controlling a flow of carriers through a semiconductor layer between a pair of electrodes. The thermo electronic structure has a first portion disposed on at least one of the pair of electrodes and a second portion disposed over a region of the semiconductor layer proximate the control electrode between the control electrode and said at least one of the pair of electrode. The thermo electronic structure extends from the first portion to the second portion for removing heat generated heat from said region in the semiconductor layer.

    摘要翻译： 一种具有晶体管和热电子结构的半导体结构。 晶体管具有用于控制载流子流过一对电极之间的半导体层的控制电极。 所述热电子结构具有设置在所述一对电极中的至少一个上的第一部分和设置在所述控制电极和所述一对电极中的所述至少一个之间的所述半导体层的靠近所述控制电极的区域上的第二部分。 热电子结构从第一部分延伸到第二部分，用于从半导体层中的所述区域去除热产生的热量。