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公开(公告)号：US07880882B2
公开(公告)日：2011-02-01
申请号：US12157142
申请日：2008-06-06
IPC分类号： G01N21/25
CPC分类号： G01J3/10 , G01J3/02 , G01J3/0218 , G01J3/0256 , G01J3/0259 , G02B6/1221 , G02B6/4203
摘要： The invention discloses a system for optical spectroscopy comprising a multi-wavelength semiconductor light source comprising a plurality of semiconductor light sources disposed on a silicon sub-carrier and emitting a plurality of radiation components spanning a wavelength range. The radiation components are coupled to a waveguide array disposed on the same silicon subcarrier. Output from the waveguide array provides a compact multi-wavelength laser source with wide tuning range via a plurality of laser sources. The system further comprises means for directing radiation components to a sample, and an optical detector configured to detect one of a radiation reflected from and transmitted through said sample. The system can be used in a variety of applications including the analysis of in-vivo human tissue, agricultural samples, and pharmaceutical samples. Typical wavelength ranges are 650-1000 nm, 700-1700 nm, and 1100-2500 nm.
摘要翻译： 本发明公开了一种光谱学系统，其包括多波长半导体光源，该多波长半导体光源包括设置在硅副载体上的多个半导体光源，并且发射多个辐射成分，该辐射成分跨越波长范围。 辐射分量耦合到设置在同一硅子载波上的波导阵列。 来自波导阵列的输出通过多个激光源提供具有宽调谐范围的紧凑的多波长激光源。 该系统还包括用于将辐射分量引导到样本的装置，以及被配置为检测从所述样品反射和透射的辐射中的一种的光学检测器。 该系统可用于各种应用，包括体内人体组织，农业样品和药物样品的分析。 典型的波长范围是650-1000nm，700-1700nm和1100-2500nm。
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公开(公告)号：US07671997B2
公开(公告)日：2010-03-02
申请号：US11981157
申请日：2007-10-30
申请人： Vijaysekhar Jayaraman , Eric Hall
发明人： Vijaysekhar Jayaraman , Eric Hall
CPC分类号： H01L33/0045 , G01B9/02091 , H01L33/06
摘要： A superluminescent diode according the present invention employs a uniform AlGaInAs quantum well on an InP substrate, emitting in a range of 1100 to 1800 nm. The favorable conduction band: valence band offset ratio of this material system enables superluminescent diodes which simultaneously provide high power and large optical bandwidth. A recent reduction to practice of the present invention simultaneously demonstrates output power exceeding 100 mW and bandwidth exceeding 100 nm. A preferred embodiment of this invention uses multiple uniform AlGaInAs quantum wells with two confined quantum states and energetic separation in a range of 100-130 nm. An alternate preferred embodiment uses non-uniform wells, with each well having two confined quantum states. The present invention is particularly useful in time domain and spectral domain optical coherence tomography systems, providing increased resolution and tissue penetration for in-vivo imaging.
摘要翻译： 根据本发明的超发光二极管在InP衬底上采用均匀的AlGaInAs量子阱，其发射范围为1100〜1800nm。 该材料系统的有利导带：价带偏移比使得能够同时提供高功率和大的光学带宽的超发光二极管。 同时实现本发明的最近的实践表明，输出功率超过100mW，带宽超过100nm。 本发明的优选实施例使用具有两个限制量子态的多个均匀的AlGaInAs量子阱和在100-130nm范围内的能量分离。 替代的优选实施例使用不均匀的孔，每个孔具有两个限制的量子态。 本发明在时域和频域光学相干断层摄影系统中特别有用，为体内成像提供了更高的分辨率和组织穿透性。
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公开(公告)号：US20070182960A1
公开(公告)日：2007-08-09
申请号：US11654772
申请日：2007-01-18
CPC分类号： G01J3/108
摘要： A compact laser spectrometer according to the present invention includes a plurality of semiconductor lasers comprising a plurality of semiconductor gain medium compositions emitting a plurality of radiation components originating from an area having a maximum transverse dimension that is smaller than a minimum feature size of a sample. A broadband optical detector detects a diffuse reflectance. In one preferred embodiment of this invention the plurality of semiconductor lasers consists of Fabry-Perot edge-emitting lasers arranged around the perimeter of a cylindrical submount with a substantially circular cross-section. The plurality of radiation components is directly coupled to a multi-mode optical fiber, which presents radiation to a sample. In another preferred embodiment a linear array of Fabry-Perot edge-emitting lasers is directly coupled to a multi-mode fiber. In still another preferred embodiment, a two-dimensional array of vertical cavity surface-emitting lasers is directly coupled to a multi-mode optical fiber.
摘要翻译： 根据本发明的紧凑型激光光谱仪包括多个半导体激光器，其包括多个半导体增益介质组合物，所述多个半导体增益介质组合物发射多个辐射分量，所述多个辐射分量源自具有小于样品的最小特征尺寸的最大横向尺寸的区域。 宽带光学检测器检测漫反射。 在本发明的一个优选实施例中，多个半导体激光器由围绕圆柱形基座的周边布置的法布里 - 珀罗边缘发射激光器组成，具有基本圆形的横截面。 多个辐射分量直接耦合到多模光纤，其向样品呈现辐射。 在另一个优选实施例中，法布里 - 珀罗边缘发射激光器的线性阵列直接耦合到多模光纤。 在另一优选实施例中，垂直腔表面发射激光器的二维阵列直接耦合到多模光纤。
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公开(公告)号：US20060280216A1
公开(公告)日：2006-12-14
申请号：US11447655
申请日：2006-06-06
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , G01J3/02 , G01J3/0218 , G01J3/0256 , G01J3/10 , G01J3/4338 , G01N21/39 , G02B6/4202 , H01S5/02284 , H01S5/4012 , H01S5/4087
摘要： A semiconductor laser-based spectrometer according to the present invention includes a plurality of semiconductor lasers comprising a plurality of semiconductor gain medium compositions directly coupled to a large-core multi-mode fiber with no intervening optics. An output radiation from the multi-mode fiber is tunable by switching the drive current amongst the lasers, and by thermal tuning of each laser in the array. In combination with presentation to a sample, and means for detection of a diffuse reflectance or transmittance, this assembly functions as a compact, high signal to noise ratio, fast measurement spectrometer. In one preferred embodiment of this invention the plurality of semiconductor lasers consists of Fabry-Perot edge-emitting lasers arranged around the perimeter of a cylindrical submount with a substantially circular cross-section. In another preferred embodiment a linear array of Fabry-Perot edge-emitting lasers is directly coupled to a multi-mode fiber. In still another preferred embodiment, a two-dimensional array of vertical cavity surface-emitting lasers is directly coupled to a multi-mode optical fiber.
摘要翻译： 根据本发明的基于半导体激光的光谱仪包括多个半导体激光器，其包括直接耦合到没有中间光学器件的大芯多模光纤的多个半导体增益介质组成。 来自多模光纤的输出辐射可以通过切换激光器之间的驱动电流以及通过阵列中的每个激光器的热调谐来调节。 结合对样本的呈现以及用于检测漫反射率或透射率的装置，该组件用作紧凑，高信噪比，快速测量光谱仪。 在本发明的一个优选实施例中，多个半导体激光器由围绕圆柱形基座的周边布置的法布里 - 珀罗边缘发射激光器组成，具有基本圆形的横截面。 在另一个优选实施例中，法布里 - 珀罗边缘发射激光器的线性阵列直接耦合到多模光纤。 在另一优选实施例中，垂直腔表面发射激光器的二维阵列直接耦合到多模光纤。
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5.发明授权
公开(公告)号：US5835517A
公开(公告)日：1998-11-10
申请号：US728029
申请日：1996-10-04
CPC分类号： G02B6/29358 , G02B6/2938
摘要： A compact WDM optical device can demultiplex an optical laser signal containing several different wavelengths corresponding to particular channels, and, in reverse operation operate as a multiplexer to interleave several different wavelengths into a multiplexed multi-channel optical laser signal with improved insertion loss characteristics. The optical device includes a linear array of passive resonant optical cavities, in the form of Fabry-Perot filters, extending in a lateral direction and an integral array of associated microlenses extending in the lateral direction. Each microlens has a center which is offset from the central longitudinal axis of an associated Fabry-Perot filter to reflect laser radiation through the device. Each optical cavity is tuned by adjusting the longitudinal dimension thereof to a particular wavelength contained in the multi-channel optical signal. A stepped-wavelength steered laser radiation source for the optical device uses a VCSEL array with offset microlenses. With an additional row of microlenses the optical device can be used for wavelength routing and channel dropping applications. A stepped-wavelength WDM VCSEL array can be similarly organized to form a WDM combiner or multiplexer.
摘要翻译： 紧凑型WDM光学器件可以对包含对应于特定通道的几个不同波长的光学激光信号进行解复用，并且在反向操作中，作为多路复用器操作以将多个不同波长交错成具有改进的插入损耗特性的复用多通道光学激光信号。 该光学器件包括以横向方向延伸的法布里 - 珀罗滤光片形式的无源谐振光学腔的线性阵列和沿横向方向延伸的相关联的微透镜的整体阵列。 每个微透镜具有偏离相关联的法布里 - 珀罗滤光器的中心纵轴的中心，以反射激光辐射穿过该装置。 通过将其纵向尺寸调整到包含在多通道光信号中的特定波长来调节每个光学腔。 用于光学器件的步进波长转向激光辐射源使用具有偏移微透镜的VCSEL阵列。 通过增加一列微透镜，光学器件可用于波长路由和信道丢弃应用。 可以类似地组织阶跃波长WDM VCSEL阵列以形成WDM组合器或多路复用器。
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公开(公告)号：US20090066965A1
公开(公告)日：2009-03-12
申请号：US11981157
申请日：2007-10-30
申请人： Vijaysekhar Jayaraman , Eric Hall
发明人： Vijaysekhar Jayaraman , Eric Hall
CPC分类号： H01L33/0045 , G01B9/02091 , H01L33/06
摘要： A superluminescent diode according the present invention employs a unoform AlGaInAs quantum well on an InP substrate, emitting in a range of 1100 to 1800 nm. The favorable conduction band: valence band offset ratio of this material system enables superluminescent diodes which simultaneously provide high power and large optical bandwidth. A recent reduction to practice of the present invention simultaneously demonstrates output power exceeding 100 mW and bandwidth exceeding 100 nm. A preferred embodiment of this invention uses multiple uniform AlGaInAs quantum wells with two confined quantum states and energetic separation in a range of 100-130 nm. An alternate preferred embodiment uses non-uniform wells, with each well having two confined quantum states. The present invention is particularly useful in time domain and spectral domain optical coherence tomography systems, providing increased resolution and tissue penetration for in-vivo imaging.
摘要翻译： 根据本发明的超发光二极管在InP衬底上采用不变的AlGaInAs量子阱，其发射范围为1100〜1800nm。 该材料系统的有利导带：价带偏移比使得能够同时提供高功率和大的光学带宽的超发光二极管。 同时实现本发明的最近的实践表明，输出功率超过100mW，带宽超过100nm。 本发明的优选实施例使用具有两个限制量子态的多个均匀的AlGaInAs量子阱和在100-130nm范围内的能量分离。 替代的优选实施例使用不均匀的孔，每个孔具有两个限制的量子态。 本发明在时域和频域光学相干断层摄影系统中特别有用，为体内成像提供了更高的分辨率和组织穿透性。
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公开(公告)号：US20070183643A1
公开(公告)日：2007-08-09
申请号：US11655559
申请日：2007-01-19
IPC分类号： G06K9/00
CPC分类号： A61B3/102 , A61B3/10 , A61B5/0059 , A61B5/0066 , A61B5/441 , G01B9/02004 , G01B9/02091 , G01N21/4795 , H01S5/141 , H01S5/18366
摘要： A swept source Optical coherence tomography system (SSOCT) comprises a vertical cavity surface-emitting laser with an integrated MEMs tunable mirror movable by electro-static deflection. The MEMs tunable VCSEL offers scan rates greater than 100 khz and tuning ranges approaching 200 nm around 1300 nm and 150 nm around 850 nm. In the preferred embodiment of this invention, a bottom mirror of the VCSEL is comprised of a Aluminum Gallium Arsenide/Aluminum Oxide DBR stack, and a movable top mirror is comprised of a TiO2/SiO2 DBR stack. A MEMs tunable VCSEL at 1300 nm is preferably pumped through the top mirror in a wavelength range between 1050 and 1120 nm, and a MEMs tunable VCSEL at 850 nm is preferably pumped through the top mirror in a wavelength range between 700 nm and 730 nm.
摘要翻译： 扫频源光学相干断层摄影系统（SSOCT）包括垂直腔表面发射激光器，其具有可通过静电偏转移动的集成MEM可调谐镜。 MEMs可调谐VCSEL提供的扫描速率大于100 khz，调谐范围在1300 nm附近达到200 nm，在850 nm附近为150 nm。 在本发明的优选实施例中，VCSEL的底部反射镜由铝砷化镓/氧化铝DBR堆叠构成，并且可移动上反射镜由TiO 2 / SiO 2 DBR叠层构成。 优选在1300nm处的可调谐VCSEL可调谐VCSEL在1050和1120nm之间的波长范围内被泵送通过上反射镜，并且优选在700nm和730nm之间的波长范围内泵浦在850nm处的MEMs可调VCSEL。
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公开(公告)号：US06372533B1
公开(公告)日：2002-04-16
申请号：US09805259
申请日：2001-03-13
IPC分类号： H01L2120
摘要： A process for use in fabrication of a semiconductor device is disclosed. The fabricated semiconductor device includes a top oxide aperture within a top oxidation layer and a bottom oxide aperture within a bottom oxidation layer precisely positioned relative to each other, and an electrical contact to a contact layer between the top and bottom oxidation layers. The process includes the following steps: etching past one of the oxidation layers and stopping in the contact layer, etching one or more holes traversing the top and bottom oxidation layers, and simultaneously oxidizing both oxidation layers. Etching past both oxidation layers in the same alignment step ensures that the centers of the two apertures, as formed through selective oxidation, will be aligned. Using this technique in the fabrication of semiconductor devices that include optically pumped vertical cavity surface emitting lasers promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. The aligned oxide apertures provide a lateral refractive index profile, which guides the optical energy.
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9.发明授权Semiconductor device with aligned oxide apertures and contact to an intervening layer 有权具有对准的氧化物孔径并与中间层接触的半导体器件公开(公告)号：US06314118B1
公开(公告)日：2001-11-06
申请号：US09186848
申请日：1998-11-05
IPC分类号： H01S500
CPC分类号： H01S5/18338 , H01S5/026 , H01S5/041 , H01S5/18311 , H01S5/4025
摘要： A process for use in fabrication of a semiconductor device is disclosed. The fabricated semiconductor device includes a top oxide aperture within a top oxidation layer and a bottom oxide aperture within a bottom oxidation layer precisely positioned relative to each other, and an electrical contact to a contact layer between the top and bottom oxidation layers. The process includes the following steps: etching past one of the oxidation layers and stopping in the contact layer, etching one or more holes traversing the top and bottom oxidation layers, and simultaneously oxidizing both oxidation layers. Etching past both oxidation layers in the same alignment step ensures that the centers of the two apertures, as formed through selective oxidation, will be aligned. Using this technique in the fabrication of semiconductor devices that include optically pumped vertical cavity surface emitting lasers promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. The aligned oxide apertures provide a lateral refractive index profile, which guides the optical energy.
摘要翻译： 公开了一种用于制造半导体器件的方法。 所制造的半导体器件包括顶部氧化层内的顶部氧化物孔和位于相对于彼此精确定位的底部氧化层内的底部氧化物孔，以及与顶部和底部氧化层之间的接触层的电接触。 该方法包括以下步骤：蚀刻通过氧化层中的一个并在接触层中停止，蚀刻穿过顶部和底部氧化层的一个或多个孔，同时氧化两个氧化层。 在相同的取向步骤中通过两个氧化层进行蚀刻确保通过选择性氧化形成的两个孔的中心将被对准。 在制造包括光学泵浦的垂直腔表面发射激光器的半导体器件中使用这种技术促进低损耗折射率引导与机械坚固且可重复制造的结构结合。 排列的氧化物孔提供横向折射率分布，其引导光能。
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10.发明授权Process for manufacturing vertical cavity surface emitting lasers using patterned wafer fusion and the device manufactured by the process 失效使用图案化晶片熔合制造垂直腔表面发射激光器的工艺和由该工艺制造的器件
公开(公告)号：US5985686A
公开(公告)日：1999-11-16
申请号：US14778
申请日：1998-01-28
CPC分类号： H01S5/18391 , H01S2301/18 , H01S5/18308 , H01S5/18316 , H01S5/18333 , H01S5/1838 , H01S5/2063 , H01S5/423
摘要： In the fabrication of vertical cavity surface emitting lasers, patterned wafer fusion promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. A fabricated laterally refractive index guided VCSEL includes a plurality of layers of semiconductor, including a bottom mirror stack disposed above a semiconductor substrate, an active region having upper and lower claddings sandwiching a layer of quantum wells disposed above the bottom mirror stack, and a top mirror stack disposed above the active region. A recessed pattern is etched in one of the plurality of layers to create a mode confining layer, prior to wafer fusion, which forms a buried air gap subsequent to wafer fusion. The buried air gap provides a lateral refractive index profile, which functions as a low-loss means for index guiding the VCSEL optical energy to the single fundamental transverse mode.
摘要翻译： 在垂直腔表面发射激光器的制造中，图案化晶片熔合促进低损耗折射率引导与机械鲁棒且可重复制造的结构结合。 制造的横向折射率引导VCSEL包括多个半导体层，包括设置在半导体衬底上方的底部反射镜叠层，具有夹着设置在底部反射镜叠层上方的量子阱层的上部和下部包层的有源区域，以及顶部 反射镜堆叠设置在有源区域之上。 在多个层中的一个层中蚀刻凹陷图案以在晶片熔化之前形成模式限制层，其在晶片熔合之后形成埋入的空气间隙。 掩埋气隙提供横向折射率分布，其用作用于将VCSEL光能引导到单个基本横向模式的折射率的低损耗装置。
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