公开(公告)号：US07815786B2

公开(公告)日：2010-10-19

申请号：US11846385

申请日：2007-08-28

申请人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

发明人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

IPC分类号： H01L21/4763

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D7/12 ,  C25D7/123 ,  H01L21/76877

摘要： An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

摘要翻译： 一种用于在具有亚微米尺寸互连特征的半导体集成电路基板上电解电镀Cu的电解电镀方法和组合物。 该组合物包含Cu离子源和包含聚醚基团的抑制剂化合物。 该方法包括以超填充速度的快速自下而上沉积来超填充，通过其从特征的底部到特征的顶部开口的垂直方向上的Cu沉积基本上大于侧壁上的Cu沉积。

公开(公告)号：US08608933B2

公开(公告)日：2013-12-17

申请号：US13214525

申请日：2011-08-22

申请人： Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Xuan Lin ,  Paul Figura

发明人： Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Xuan Lin ,  Paul Figura

IPC分类号： C25D3/34

CPC分类号： C25D7/123 ,  C25D3/38 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877 ,  H01L21/76879

摘要： A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device. The plating composition comprises an electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

摘要翻译： 一种用于在制造微电子器件中将Cu电镀到衬底上的方法和组合物。 电镀组合物包含含有Cu离子源的电解液和用于流平的取代的吡啶基高分子化合物。

公开(公告)号：US07998859B2

公开(公告)日：2011-08-16

申请号：US12238139

申请日：2008-09-25

申请人： Qingyun Chen ,  Xuan Lin ,  Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Joseph A. Abys

发明人： Qingyun Chen ,  Xuan Lin ,  Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Joseph A. Abys

IPC分类号： H01L21/00

CPC分类号： H01L21/76873 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76874

摘要： A method is disclosed for metallizing a substrate comprising an interconnect feature in the manufacture of a microelectronic device, wherein the interconnect feature comprises a bottom, a sidewall, and a top opening having a diameter, D. The method comprises the following steps: depositing a barrier layer on the bottom and the sidewall of the interconnect feature, the barrier layer comprising a metal selected from the group consisting of ruthenium, tungsten, tantalum, titanium, iridium, rhodium, and combinations thereof; contacting the substrate comprising the interconnect feature comprising the bottom and sidewall having the barrier layer thereon with an aqueous composition comprising a reducing agent and a surfactant; and depositing copper metal onto the bottom and the sidewall of the interconnect feature having the barrier layer thereon.

摘要翻译： 公开了一种用于金属化包括在微电子器件的制造中的互连特征的衬底的方法，其中所述互连特征包括底部，侧壁和具有直径D的顶部开口。该方法包括以下步骤： 所述阻挡层包括选自由钌，钨，钽，钛，铱，铑及其组合组成的组的金属; 使包含所述底部和侧壁的所述基底的所述基底与所述阻挡层接触，所述水性组合物包含还原剂和表面活性剂; 以及在其上具有阻挡层的互连部件的底部和侧壁上沉积铜金属。

公开(公告)号：US08388824B2

公开(公告)日：2013-03-05

申请号：US12324335

申请日：2008-11-26

申请人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Richard Hurtubise ,  Qingyun Chen

发明人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Richard Hurtubise ,  Qingyun Chen

IPC分类号： C25D5/02 ,  C25D3/38 ,  H05K3/42

CPC分类号： H01L21/76879 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature.

摘要翻译： 一种用于金属化半导体集成电路器件衬底中的通孔特征的方法，其中所述半导体集成电路器件衬底包括前表面，后表面和所述通孔特征，并且其中所述通孔特征包括在所述衬底的前表面中的开口 ，从基板的前表面向内延伸的侧壁和底部。 该方法包括使半导体集成电路器件衬底与包含（a）铜离子源和（b）整平剂化合物的电解铜沉积化学物质接触，其中矫光剂化合物是二吡啶基化合物和烷基化剂的反应产物; 并向电解沉积化学物质提供电流以将铜金属沉积到通孔特征的底部和侧壁上，从而产生铜填充的通孔特征。

公开(公告)号：US10221496B2

公开(公告)日：2019-03-05

申请号：US13699910

申请日：2011-05-24

申请人： Thomas B. Richardson ,  Wenbo Shao ,  Xuan Lin ,  Cai Wang ,  Vincent Paneccasio, Jr. ,  Joseph A. Abys ,  Yun Zhang ,  Richard Hurtubise ,  Chen Wang

发明人： Thomas B. Richardson ,  Wenbo Shao ,  Xuan Lin ,  Cai Wang ,  Vincent Paneccasio, Jr. ,  Joseph A. Abys ,  Yun Zhang ,  Richard Hurtubise ,  Chen Wang

IPC分类号： C25D5/02 ,  C25D3/38 ,  H01L21/288 ,  H01L21/768 ,  C25D7/12

摘要： A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

公开(公告)号：US07670950B2

公开(公告)日：2010-03-02

申请号：US12185641

申请日：2008-08-04

申请人： Thomas B. Richardson ,  Yun Zhang ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Richard Hurtubise ,  Joseph A. Abys

发明人： Thomas B. Richardson ,  Yun Zhang ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Richard Hurtubise ,  Joseph A. Abys

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  C25D3/38 ,  C25D5/02 ,  C25D7/123 ,  H01L21/2885

摘要： A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

摘要翻译： 一种用于在半导体集成电路器件衬底中金属化穿硅通孔特征的方法，包括将半导体集成电路器件衬底浸入包含铜离子源，有机磺酸或无机酸或一种或多种有机物的电解铜沉积组合物中 选自偏振器和/或去偏振器的化合物以及氯离子。

公开(公告)号：US07332193B2

公开(公告)日：2008-02-19

申请号：US11085304

申请日：2005-03-21

申请人： Charles Valverde ,  Nicolai Petrov ,  Eric Yakobson ,  Qingyun Chen ,  Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Christian Witt

发明人： Charles Valverde ,  Nicolai Petrov ,  Eric Yakobson ,  Qingyun Chen ,  Vincent Paneccasio, Jr. ,  Richard Hurtubise ,  Christian Witt

IPC分类号： C23C18/16 ,  C23C18/36 ,  C23C18/32

CPC分类号： H01L21/76849 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50 ,  H01L21/288 ,  H05K3/244

摘要： An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

摘要翻译： 一种用于在制造微电子器件时将Co，Ni或其合金沉积在金属基底上的化学镀方法和组合物，其包括选自Co离子和Ni离子的沉积离子源，用于还原的还原剂 沉积到金属到基底上的离子，以及基于肼的流平剂。

公开(公告)号：US10541140B2

公开(公告)日：2020-01-21

申请号：US13981974

申请日：2012-01-26

申请人： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Theodore Antonellis

发明人： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Theodore Antonellis

IPC分类号： H01L21/288 ,  C25D3/38 ,  C25D5/18 ,  H01L21/768 ,  C25D7/12 ,  C25D5/02

摘要： A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

公开(公告)号：US6013203A

公开(公告)日：2000-01-11

申请号：US136219

申请日：1998-08-19

申请人： Vincent Paneccasio, Jr. ,  Mark P. Chasse

发明人： Vincent Paneccasio, Jr. ,  Mark P. Chasse

IPC分类号： C09D5/24 ,  H01B1/22 ,  H05K1/09 ,  H05K9/00

CPC分类号： H05K9/0092 ,  C09D5/24 ,  H01B1/22 ,  H05K1/095

摘要： An electrically conductive paint for providing EMI/RFI shielding for housings of electronics components comprises a cross-linked organic resin binder containing cross-linkable functional groups such as OH groups, electrically conductive metallic particles, preferably a mixture of silver flakes and silver-coated copper flakes, a solvent, a cross-linking agent which cross-links with itself and with the functional groups of the organic binder and preferably a catalyst which accelerates cross-linking of the cross-linking agent and organic binder. Using such a paint formulation it has been found that thinner coatings can be used while still exceeding the properties needed for EMI/RFI shielding of housing for electronic components. A rheological additive which is an organic derivative of castor oil is preferably used to control the viscosity and spraying characteristics of the paint especially in a paint composition containing silver coated copper flakes. The conductive paint provides a sprayed coating which is durable, has low resistivity and is smooth and has both cohesive and adhesive strength. A method is also provided for forming EMI/RFI shielding on housings for electronic components and electronic components made using the method and paint composition of the invention.

摘要翻译： 用于为电子部件的壳体提供EMI / RFI屏蔽的导电涂料包括含有可交联官能团如OH基团的交联有机树脂粘合剂，导电金属颗粒，优选银薄片和银涂层铜的混合物 薄片，溶剂，与其自身和有机粘合剂的官能团交联的交联剂，优选加速交联剂和有机粘合剂的交联的催化剂。 已经发现使用这种涂料配方，可以使用更薄的涂层，同时仍然超过用于电子部件的外壳的EMI / RFI屏蔽所需的性能。 作为蓖麻油的有机衍生物的流变添加剂优选用于控制涂料的粘度和喷涂特性，特别是在含有银涂布的铜薄片的涂料组合物中。 导电涂料提供耐用的，具有低电阻率并且光滑并且具有粘结和粘合强度的喷涂。 还提供了一种用于在使用本发明的方法和涂料组合物制造的电子部件和电子部件的壳体上形成EMI / RFI屏蔽的方法。

公开(公告)号：US5061351A

公开(公告)日：1991-10-29

申请号：US555690

申请日：1990-07-23

申请人： John H. Commander ,  Vincent Paneccasio, Jr.

发明人： John H. Commander ,  Vincent Paneccasio, Jr.

IPC分类号： C25D3/32

CPC分类号： C25D3/32

摘要： A vinyl-pyridine or vinyl-quinoline quaternary derivative is provided to enhance the brightness and operating properties of tin aqueous sulfuric acid plating baths.

摘要翻译： 提供乙烯基吡啶或乙烯基 - 喹啉季衍生物以提高锡硫酸水溶液的亮度和操作性能。