利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.021 秒)

    Synchronous mirroring in non-volatile memory systems
    3.
    发明授权
    Synchronous mirroring in non-volatile memory systems 有权
    非易失性存储器系统中的同步镜像

    公开(公告)号：US09135164B2

    公开(公告)日：2015-09-15

    申请号：US13842079

    申请日：2013-03-15

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Shibabrata Mondal ,  Swamy Gowda

    IPC分类号： G06F12/02 ,  G11C16/10

    CPC分类号： G06F11/2058 ,  G06F11/14 ,  G06F11/1451 ,  G06F11/2082 ,  G06F12/0246 ,  G06F2201/84 ,  G06F2212/7201 ,  G06F2212/7202

    摘要： First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.

    摘要翻译： 接收第一数据以存储在第一非对称存储器件中。 第一个写入阶段被识别为当前写入阶段。 包括在第一非对称存储器件中的第一段被识别为可用于写入数据的下一段。 第一个数据被写入第一个数据段。 存储与第一段相关联的信息，以及指示第一段被写入第一写入阶段的信息。 接收第二数据以存储在非对称存储器中。 包括在第一非对称存储器件中的第二段被识别为可用于写入数据的下一段。 第二个数据被写入第二个数据段。 与第二段和第二存储块相关联的信息与指示第二段被写入第二写入阶段的信息一起被存储。

    Small block write operations in non-volatile memory systems
    4.
    发明授权
    Small block write operations in non-volatile memory systems 有权
    非易失性存储器系统中的小块写入操作

    公开(公告)号：US08996796B1

    公开(公告)日：2015-03-31

    申请号：US13842940

    申请日：2013-03-15

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Ashish Singhai ,  Shibabrata Mondal ,  Swamy Gowda

    IPC分类号： G06F12/00 ,  G06F12/12

    CPC分类号： G06F3/0608 ,  G06F3/0631 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1451 ,  G06F11/2058 ,  G06F12/0246 ,  G06F12/0646 ,  G06F12/121 ,  G06F2201/84 ,  G06F2212/1044 ,  G06F2212/2022 ,  G06F2212/7202 ,  G06F2212/7203

    摘要： A first portion of an asymmetric memory is configured as temporary storage for application data units with sizes corresponding to a small memory block that is smaller than the size of a logical write unit associated with the asymmetric memory. A portion of the remaining asymmetric memory is configured as a reconciled storage for application data units with varying sizes. A first application data unit is received for writing to the asymmetric memory. Based on computing the size of the first application data unit as corresponding to the small memory block, the first application data unit is written to the temporary storage. Upon determining that a threshold is reached, a memory write operation is performed for writing the application data units from the temporary storage to the reconciled storage. The application data units written to the reconciled storage are removed from the temporary storage.

    摘要翻译： 非对称存储器的第一部分被配置为具有对应于小存储器块的应用数据单元的临时存储器，其小于与非对称存储器相关联的逻辑写入单元的大小。 剩余非对称存储器的一部分被配置为具有不同大小的应用数据单元的对帐存储。 接收第一应用数据单元以写入非对称存储器。 基于计算与小存储器块对应的第一应用数据单元的大小，将第一应用数据单元写入临时存储器。 在确定达到阈值时，执行存储器写入操作，以将应用数据单元从临时存储器写入已对帐存储。 写入对帐存储器的应用程序数据单元从临时存储器中删除。

    Managing the Write Performance of an Asymmetric Memory System
    5.
    发明申请
    Managing the Write Performance of an Asymmetric Memory System 有权
    管理非对称存储器系统的写性能

    公开(公告)号：US20140281121A1

    公开(公告)日：2014-09-18

    申请号：US13927871

    申请日：2013-06-26

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Ashish Singhai ,  Shibabrata Mondal ,  Ajith Kumar

    IPC分类号： G06F12/02

    CPC分类号： G06F3/061 ,  G06F3/0611 ,  G06F3/0655 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G06F9/4881 ,  G06F9/5016 ,  G06F12/0246 ,  G06F2212/7206 ,  G06F2212/7208

    摘要： Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

    摘要翻译： 一些实施方案包括管理基于非易失性随机存取存储器（NVRAM）的存储子系统的方法，该存储子系统包括NVRAM器件。 该方法包括：在主机计算设备上的设备驱动器处，接收每个请求将相应的数据单元写入到基于NVRAM的存储子系统的请求; 将写请求分类为写请求的子组，其中各子组内的写请求是相互排斥的; 确定基于NVRAM的存储子系统的几个NVRAM设备中的每一个的负载状况; 根据所确定的基于NVRAM的存储子系统的NVRAM设备的负载条件，在至少一个NVRAM设备上识别目标位置来服务特定的写请求子组; 以及通过将相应的数据单元写入到基于NVRAM的存储子系统的至少一个NVRAM设备上的所识别的目标位置来为特定的写请求组提供服务。

    Managing the Write Performance of an Asymmetric Memory System
    7.
    发明申请
    Managing the Write Performance of an Asymmetric Memory System 有权
    管理非对称存储器系统的写性能

    公开(公告)号：US20170038981A1

    公开(公告)日：2017-02-09

    申请号：US15332740

    申请日：2016-10-24

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Ashish Singhai ,  Shibabrata Mondal ,  Ajith Kumar

    IPC分类号： G06F3/06 ,  G06F9/50 ,  G06F9/48

    CPC分类号： G06F3/061 ,  G06F3/0611 ,  G06F3/0655 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G06F9/4881 ,  G06F9/5016 ,  G06F12/0246 ,  G06F2212/7206 ,  G06F2212/7208

    摘要： Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

    摘要翻译： 一些实施方案包括管理基于非易失性随机存取存储器（NVRAM）的存储子系统的方法，该存储子系统包括NVRAM器件。 该方法包括：在主机计算设备上的设备驱动器处，接收每个请求将相应的数据单元写入到基于NVRAM的存储子系统的请求; 将写请求分类为写请求的子组，其中各子组内的写请求是相互排斥的; 确定基于NVRAM的存储子系统的几个NVRAM设备中的每一个的负载状况; 根据所确定的基于NVRAM的存储子系统的NVRAM设备的负载条件，在至少一个NVRAM设备上识别目标位置来服务特定的写请求子组; 以及通过将相应的数据单元写入到基于NVRAM的存储子系统的至少一个NVRAM设备上的所识别的目标位置来为特定的写请求组提供服务。

    Managing the write performance of an asymmetric memory system
    9.
    发明授权
    Managing the write performance of an asymmetric memory system 有权
    管理非对称存储器系统的写入性能

    公开(公告)号：US09588698B1

    公开(公告)日：2017-03-07

    申请号：US15077282

    申请日：2016-03-22

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Ashish Singhai ,  Shibabrata Mondal ,  Ajith Kumar

    IPC分类号： G06F12/00 ,  G06F3/06 ,  G06F12/02

    CPC分类号： G06F3/061 ,  G06F3/0611 ,  G06F3/0655 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G06F9/4881 ,  G06F9/5016 ,  G06F12/0246 ,  G06F2212/7206 ,  G06F2212/7208

    摘要： Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

    摘要翻译： 一些实施方案包括管理基于非易失性随机存取存储器（NVRAM）的存储子系统的方法，该存储子系统包括NVRAM器件。 该方法包括：在主机计算设备上的设备驱动器处，接收每个请求将相应的数据单元写入到基于NVRAM的存储子系统的请求; 将写请求分类为写请求的子组，其中各子组内的写请求是相互排斥的; 确定基于NVRAM的存储子系统的几个NVRAM设备中的每一个的负载状况; 根据所确定的基于NVRAM的存储子系统的NVRAM设备的负载条件，在至少一个NVRAM设备上识别目标位置来服务特定的写请求子组; 以及通过将相应的数据单元写入到基于NVRAM的存储子系统的至少一个NVRAM设备上的所识别的目标位置来为特定的写请求组提供服务。

    Dynamic restriping in nonvolatile memory systems
    10.
    发明授权
    Dynamic restriping in nonvolatile memory systems 有权
    非易失性存储器系统中的动态重新安装

    公开(公告)号：US09286002B1

    公开(公告)日：2016-03-15

    申请号：US13841706

    申请日：2013-03-15

    申请人： Virident Systems Inc.

    发明人： Vijay Karamcheti ,  Swamy Gowda ,  Rajendra Prasad Mishra ,  Shibabrata Mondal

    IPC分类号： G06F12/00 ,  G06F3/06 ,  G06F11/18 ,  G11C29/00 ,  G06F11/22 ,  G06F11/20

    CPC分类号： G06F3/064 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/0647 ,  G06F3/0653 ,  G06F3/0688 ,  G06F11/108 ,  G06F11/1096 ,  G06F11/18 ,  G06F11/20 ,  G06F11/22 ,  G06F2201/84 ,  G06F2211/1028 ,  G06F2211/1059 ,  G11C29/70 ,  G11C29/76 ,  G11C29/765

    摘要： Data is stored as a first collection of memory blocks distributed across a first set of memory devices. It is determined that a first memory device in the first set is in a degraded state. Data is recovered corresponding to a first memory block in the first collection of memory blocks that is stored in the first memory device, which is configured to include a first number of memory blocks. The recovered data is stored in a second memory device as a new memory block, which is added to the first collection of memory blocks. The first memory device is removed from the first set and reconfigured with a second number of memory blocks that is less than the first number of memory blocks. Memory blocks in a second collection of memory blocks distributed across a second set of memory devices is stored in the reconfigured first memory device.

    摘要翻译： 数据被存储为分布在第一组存储器件上的存储块的第一集合。 确定第一组中的第一存储器件处于劣化状态。 数据被恢复对应于存储在第一存储器设备中的存储块的第一集合中的第一存储器块，其被配置为包括第一数量的存储器块。 恢复的数据作为新的存储器块存储在第二存储器件中，其被添加到存储块的第一集合中。 第一存储器件从第一组中移除并且被重新配置成小于第一数量的存储器块的第二数量的存储器块。 分配在第二组存储器设备上的第二存储器块集合中的存储器块被存储在重新配置的第一存储器设备中。