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    Nanoimprint resist
    1.
    发明授权
    Nanoimprint resist 有权
    纳米抗蚀剂

    公开(公告)号：US07431858B2

    公开(公告)日：2008-10-07

    申请号：US10511402

    申请日：2003-04-09

    申请人： Walter Spiess ,  Fumio Kita ,  Michael Meier ,  Andreas Gier ,  Martin Mennig ,  Peter W Oliveira ,  Helmut Schmidt

    发明人： Walter Spiess ,  Fumio Kita ,  Michael Meier ,  Andreas Gier ,  Martin Mennig ,  Peter W Oliveira ,  Helmut Schmidt

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/0047

    摘要： The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.

    摘要翻译： 本发明涉及一种用于微结构化电子部件的方法，其以良好的纵横比产生高分辨率（<= 200nm），同时显着地低于光刻方法。 本发明的方法包括以下步骤：i）制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii）制备由底涂层（b）和载体（c）组成的靶基材; iii）在步骤i）中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii）中获得的底涂层（b） iv）涂覆的溶胶膜材料硬化; v）分离转印压花印模，由此获得作为顶涂层（a）的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤：vi）纳米复合溶胶膜的剩余层被等离子体蚀刻，优选地具有CHF 3 O 2 / O 2等离子体 ; vii）底涂层被等离子体蚀刻，优选为O 2等离子体; viii）蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。

    Nanoimprint resist
    2.
    发明申请
    Nanoimprint resist 有权
    纳米抗蚀剂

    公开(公告)号：US20050224452A1

    公开(公告)日：2005-10-13

    申请号：US10511402

    申请日：2003-04-09

    申请人： Walter Spiess ,  Fumio Kita ,  Michael Meier ,  Andreas Gier ,  Martin Mennig ,  Helmut Schmidt

    发明人： Walter Spiess ,  Fumio Kita ,  Michael Meier ,  Andreas Gier ,  Martin Mennig ,  Helmut Schmidt

    IPC分类号： G03F7/20 ,  B81C1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  H01L21/027 ,  H01L21/3065 ,  C23F1/00 ,  B05D5/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  G03G15/00 ,  H01L21/311 ,  H01L29/06

    CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/0047

    摘要： The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.

    摘要翻译： 本发明涉及一种用于微结构化电子部件的方法，其以良好的纵横比产生高分辨率（<= 200nm），同时显着地低于光刻方法。 本发明的方法包括以下步骤：i）制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii）制备由底涂层（b）和载体（c）组成的靶基材; iii）在步骤i）中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii）中获得的底涂层（b） iv）涂覆的溶胶膜材料硬化; v）分离转印压花印模，由此获得作为顶涂层（a）的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤：vi）纳米复合溶胶膜的剩余层被等离子体蚀刻，优选地具有CHF 3 O 2 / O 2等离子体 ; vii）底涂层被等离子体蚀刻，优选为O 2等离子体; viii）蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。

    Negative-working radiation-sensitive mixture, and radiation-sensitive recording material produced with this mixture
    3.
    发明授权
    Negative-working radiation-sensitive mixture, and radiation-sensitive recording material produced with this mixture 失效
    负面工作的辐射敏感混合物和用该混合物生产的辐射敏感记录材料

    公开(公告)号：US6063545A

    公开(公告)日：2000-05-16

    申请号：US871032

    申请日：1992-04-20

    申请人： Horst Roeschert ,  Juergen Fuchs ,  Walter Spiess ,  Charlotte Eckes ,  Georg Pawlowski ,  Ralph Dammel

    发明人： Horst Roeschert ,  Juergen Fuchs ,  Walter Spiess ,  Charlotte Eckes ,  Georg Pawlowski ,  Ralph Dammel

    IPC分类号： G03F7/00 ,  C07C303/28 ,  C07C309/65 ,  C07C309/66 ,  C07C309/73 ,  G03F7/004 ,  G03F7/028 ,  G03F7/038 ,  H01L21/027 ,  G03C1/73

    CPC分类号： G03F7/038 ,  C07C303/28 ,  Y10S430/122

    摘要： A negative-working radiation-sensitive mixture containinga) a compound which generates a strong acid under the action of actinic radiation,b) a compound having at least two groups crosslinkable by means of acid andc) a polymeric binder which is insoluble in water and soluble or at least swellable in aqueous alkaline solutions,wherein the compound (a) comprises a di-, tri- or tetra-hydroxybenzene which may be further substituted, or a polymer containing a di-, tri-, or tetra- hydroxy phenyl radical, is esterified with respectively 2, 3 or 4 sulfonic acids of the formula R--SO.sub.3 H, and is distinguished by high resolution and high sensitivity over a wide spectral range. It also shows high thermal stability and does not form any corrosive photolysis products on exposure. A radiation-sensitive recording material produced with this mixture is suitable for the production of photoresists, electronic components, printing plates or for chemical milling.

    摘要翻译： 一种负性辐射敏感性混合物，其包含a）在光化辐射的作用下产生强酸的化合物，b）具有至少两个可通过酸交联的基团的化合物，和c）不溶于水的聚合物粘合剂 并且在碱性水溶液中可溶或至少可溶胀，其中化合物（a）包含可被进一步取代的二 - ，三 - 或四 - 羟基苯，或含有二 - ，三 - 或四 - 羟基苯基 分别用式R-SO 3 H的2,3或4个磺酸酯化，并且在宽光谱范围内被高分辨率和高灵敏度区分。 它还显示出高的热稳定性，并且在暴露时不会形成任何腐蚀性光解产物。 用该混合物生产的辐射敏感记录材料适用于制备光致抗蚀剂，电子部件，印版或用于化学研磨。

    Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom
    4.
    发明授权
    Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom 失效
    含有重氮甲烷酸发生器和辐射敏感记录材料的负性辐射敏感混合物

    公开(公告)号：US5424166A

    公开(公告)日：1995-06-13

    申请号：US194307

    申请日：1994-02-04

    申请人： Georg Pawlowski ,  Ralph Dammel ,  Horst Roeschert ,  Walter Spiess ,  Winfried Meier

    发明人： Georg Pawlowski ,  Ralph Dammel ,  Horst Roeschert ,  Walter Spiess ,  Winfried Meier

    IPC分类号： G03F7/004 ,  C07D233/84 ,  G03F7/016 ,  G03F7/038 ,  H01L21/027 ,  G03F7/021

    CPC分类号： G03F7/0163 ,  G03F7/038

    摘要： A negative-working radiation-sensitive mixture which comprisesa) a compound, which forms a strong acid on irradiation, of the general formula ##STR1## in which R.sup.1 is a radical R.sup.2 --SO.sub.2 -- or R.sup.3 --C(O)-- andR.sup.2 and R.sup.3 independently of one another are an optionally substituted alkyl, cycloalkyl, aryl or heteroaryl radical,b) a compound containing at least two reactive groups which can be crosslinked by an acid andc) a water-insoluble binder which is soluble or at least swellable in aqueous-alkaline solutions, is described.The radiation-sensitive mixture according to the invention is distinguished by a high sensitivity over a wide spectral range. It likewise exhibits a high heat stability and forms no corrosive photolysis products on exposure to light.

    摘要翻译： 一种负性辐射敏感性混合物，其包含a）在辐射下形成强酸的化合物，其中R 1是基团R 2 -SO 2 - 或R 3 -C（O） - ，并且 R 2和R 3彼此独立地是任选取代的烷基，环烷基，芳基或杂芳基，b）含有至少两个可被酸交联的反应性基团的化合物，和c）可溶于或在 描述了在碱性水溶液中的最小溶胀性。 根据本发明的辐射敏感混合物在宽光谱范围内被高灵敏度区分。 它同样表现出高热稳定性，并且在曝光时不形成腐蚀性光解产物。

    Positive-working radiation-sensitive mixture and recording material for exposure to UV radiation containing polyfunctional compound having .alpha.-.beta.-keto ester units and sulfonate units
    5.
    发明授权
    Positive-working radiation-sensitive mixture and recording material for exposure to UV radiation containing polyfunctional compound having .alpha.-.beta.-keto ester units and sulfonate units 失效
    用于暴露于UV辐射的正性辐射敏感混合物和记录材料，其含有具有α-重氮基 - β-酮酯单元和磺酸酯单元的多官能化合物

    公开(公告)号：US5256517A

    公开(公告)日：1993-10-26

    申请号：US694353

    申请日：1991-05-01

    申请人： Horst Roeschert ,  Georg Pawlowski ,  Hans-Joachim Merrem ,  Ralph Dammel ,  Walter Spiess

    发明人： Horst Roeschert ,  Georg Pawlowski ,  Hans-Joachim Merrem ,  Ralph Dammel ,  Walter Spiess

    IPC分类号： G03F7/016 ,  G03F7/039 ,  H01L21/027 ,  G03F7/022 ,  G03F7/023

    CPC分类号： G03F7/0163

    摘要： A positive-working radiation-sensitive mixture is described which essentially contains a photoactive component and a water-insoluble binder which is soluble, or at least swellable, in aqueous alkaline solution, wherein a compound is used, as photoactive component, which contains .alpha.-diazo-.beta.-keto ester units and sulfonate units of the formula I ##STR1## in which R.sup.1 and R.sup.2, independently of one another, are an unsubstituted or substituted aliphatic, cycloaliphatic, araliphatic or aromatic radical having 4 to 20 carbon atoms, it being possible for individual CH.sub.2 groups to be replaced by oxygen or sulfur atoms or by N or NH groups and/or contain keto groups,X is an unsubstituted or substituted aliphatic, cycloaliphatic, carbocyclic, heterocyclic or araliphatic radical having 2 to 22 carbon atoms, it being possible for individual CH.sub.2 groups to be replaced by oxygen or sulfur atoms or by the groups --NR.sup.3 --, --C(O)--0--, --C(O)--NR.sup.3 --, ##STR2## --NR.sup.3 --C(O)--NR.sup.4 --, --O--C(O)--NR.sup.3 --, ##STR3## or --O--C(O)--O--, or CH groups to be replaced by ##STR4## in which R.sup.3 and R.sup.4, independently of one another, are hydrogen or an unsubstituted or substituted aliphatic, carbocyclic or araliphatic radical,m is an integer from 3 to 8,n is an integer from 1 to 3, and m>n.The radiation-sensitive mixture is especially suitable for exposure to radiation having a wavelength of about 190 to 300 nm.

    摘要翻译： 描述了一种正性辐射敏感性混合物，其基本上含有光活性组分和在碱性水溶液中可溶或至少可溶胀的水不溶性粘合剂，其中使用化合物作为光敏组分，其含有α- 其中R 1和R 2彼此独立地是具有4至20个碳原子的未取代或取代的脂族，脂环族，芳脂族或芳族基团的重氮基 - β-酮酯单元和磺酸酯单元 各个CH 2基团可以被氧或硫原子或N或NH基团和/或含有酮基取代，X是未取代或取代的具有2至22个碳原子的脂族，脂环族，碳环，杂环或芳脂族基团 各个CH 2基团可以被氧或硫原子或基团-NR 3 - ， - C（O）-O-，-C（O）-NR 3 - ， - NR 3 -C （O）-NR 4 - ， - OC（O）-NR 3 - ， - 或 - OC （O）-O-或CH基团，其中R 3和R 4彼此独立地为氢或未取代或取代的脂族，碳环或芳脂族基团，m为3至8的整数 ，n为1〜3的整数，m> n。 辐射敏感混合物特别适用于暴露于波长为约190至300nm的辐射。

    Positive-acting radiation-sensitive mixture and recording material produced therewith
    6.
    发明授权
    Positive-acting radiation-sensitive mixture and recording material produced therewith 失效
    正向辐射敏感性混合物和由其制成的记录材料

    公开(公告)号：US5498506A

    公开(公告)日：1996-03-12

    申请号：US362491

    申请日：1995-01-09

    申请人： Horst Wengenroth ,  Horst Roeschert ,  Walter Spiess ,  Gerhard Buhr ,  Georg Pawlowski

    发明人： Horst Wengenroth ,  Horst Roeschert ,  Walter Spiess ,  Gerhard Buhr ,  Georg Pawlowski

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03C1/492

    CPC分类号： G03F7/0758 ,  G03F7/0045 ,  G03F7/039

    摘要： The invention relates to a radiation-sensitive mixture comprising a) a binder which is insoluble in water but soluble or at least swellable in aqueous alkaline solution, b) a compound which forms an acid under the action of actinic radiation and c) a compound which contains at least one C-O-C or C-O-Si bond which can be cleaved by an acid, wherein said mixture additionally contains 0.1 to 70 mol %, based on the maximum amount of acid which can theoretically be produced from the compound b), of at least one compound having at least one nitrogen atom in an amine or amide bond. The mixture is used in particular in the production of electronic components. The invention also relates to a recording material having a substrate and a radiation-sensitive coating.

    摘要翻译： PCT No.PCT / EP93 / 01430 Sec。 371日期1995年1月9日 102（e）1995年4月9日PCT PCT 1993年6月7日PCT公布。 出版物WO94 / 01805 日本1990年1月20日。本发明涉及一种辐射敏感性混合物，其包含a）不溶于水但在碱性水溶液中可溶或至少可溶胀的粘合剂，b）在光化反应的作用下形成酸的化合物 辐射和c）含有至少一个可被酸裂解的COC或CO-Si键的化合物，其中所述混合物另外含有0.1-70mol％，基于理论上可从 化合物b），至少一种在胺或酰胺键中具有至少一个氮原子的化合物。 该混合物特别用于生产电子元件。 本发明还涉及具有基底和辐射敏感性涂层的记录材料。

    Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone
    9.
    发明授权
    Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone 失效
    正性光致抗蚀剂组合物，其包含三羟基苯基乙烷的混合酯和三羟基二苯甲酮的混合酯

    公开(公告)号：US5612164A

    公开(公告)日：1997-03-18

    申请号：US385857

    申请日：1995-02-09

    申请人： Anthony Canize ,  Stanley A. Ficner ,  Ping-Hung Lu ,  Walter Spiess

    发明人： Anthony Canize ,  Stanley A. Ficner ,  Ping-Hung Lu ,  Walter Spiess

    IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023

    CPC分类号： G03F7/022

    摘要： A photosensitizer comprising a trishydroxyphenylethane 80/20 to 50/50 2,1,5-/2,1,4-diazonaphthoquinone sulfonate, and a trishydroxybenzophenone 0/100 to 20/80 2,1,5-/2,1,4-diazonaphthoquinone sulfate, and a photoresist composition containing such photosensitizer, the photosensitizer being present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; and a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition.

    摘要翻译： 一种光敏剂，其包含三羟基苯基乙烷80/20至50/50 2,1,5- / 2,1,4-重氮萘醌磺酸盐和三羟基二苯甲酮0/100至20/80 2,1,5- / 2,1,4 和含有这种光敏剂的光致抗蚀剂组合物，光敏剂存在于光致抗蚀剂组合物中，其量足以使光致抗蚀剂组合物均匀地光敏化; 和水不溶性的碱溶性酚醛清漆树脂，所述酚醛清漆树脂以足以形成基本均匀的光致抗蚀剂组合物的量存在于光致抗蚀剂组合物中。

    Radiation-sensitive sulfonic acid esters and their use
    10.
    发明授权
    Radiation-sensitive sulfonic acid esters and their use 失效
    辐射敏感磺酸酯及其用途

    公开(公告)号：US5442061A

    公开(公告)日：1995-08-15

    申请号：US139017

    申请日：1993-10-21

    申请人： Georg Pawlowski ,  Horst Roeschert ,  Walter Spiess ,  Klaus-Juergen Przybilla

    发明人： Georg Pawlowski ,  Horst Roeschert ,  Walter Spiess ,  Klaus-Juergen Przybilla

    IPC分类号： G03F7/004 ,  C07D251/24 ,  C08L61/06 ,  C08L61/28 ,  C09D161/06 ,  G03F7/00 ,  G03F7/029 ,  G03F7/038 ,  H01L21/027

    CPC分类号： G03F7/038 ,  C07D251/24 ,  C09D161/06 ,  C08L61/06 ,  C08L61/28 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/123

    摘要： Sulfonic acid esters of 2,4-bistrichloromethyl-6-(mono- or dihydroxyphenyl)-1,3,5-triazine are disclosed. Also disclosed is a negative-working radiation-sensitive mixture containing such a compound in combination with a compound containing at least two acid-crosslinkable groups, and a water-insoluble polymeric binder which is soluble or at least swellable in aqueous alkaline solutions. The esters are esters of a sulfonic acid or sulfonic acids of the formula R--SO.sub.3 H or R'(--SO.sub.3 H).sub.2 with 2,4-bistrichloromethyl-6-(mono- or dihydroxyphenyl)-1,3,5-triazine of the formulae I and/or II ##STR1## where R is an optionally further substituted (C.sub.1 -C.sub.10)alkyl, (C.sub.5 -C.sub.10)cycloalkyl, (C.sub.6 -C.sub.10)aryl, (C.sub.6 -C.sub.10)aryl-(C.sub.1 -C.sub.10)alkyl or (C.sub.3 -C.sub.9)heteroaryl radical, R' is an optionally substituted (C.sub.1 -C.sub.10)alkylene, (C.sub.6 -C.sub.10)arylene or (C.sub.3 -C.sub.9)heteroarylene radical, and n may be 1 or 2. The radiation-sensitive mixture according to the invention is remarkable for a high resolution and a high sensitivity over a wide spectral range and can be used to produce a radiation-sensitive recording material suitable for producing photoresists, electronic components, or printing plates, or for chemical milling.

    摘要翻译： 公开了2,4-双三氯甲基-6-（单 - 或二羟基苯基）-1,3,5-三嗪的磺酸酯。 还公开了含有这种化合物与含有至少两个酸可交联基团的化合物的负性辐射敏感性混合物，以及在碱性水溶液中可溶或至少可溶胀的水不溶性聚合物粘合剂。 酯是式R-SO 3 H或R'（-SO 3 H）2的磺酸或磺酸与2,4-二三氯甲基-6-（单或二羟苯基）-1,3,5-三嗪的酯 （C 1 -C 10）烷基，（C 5 -C 10）环烷基，（C 6 -C 10）芳基，（C 6 -C 10）芳基 - （C 1 -C 10）烷基或（C 1 -C 10） C3-C9）杂芳基，R'是任选取代的（C 1 -C 10）亚烷基，（C 6 -C 10）亚芳基或（C 3 -C 9）亚杂芳基，n可以是1或2.根据 本发明对于在宽光谱范围内的高分辨率和高灵敏度是显着的，并且可用于生产适用于生产光刻胶，电子部件或印刷版或用于化学研磨的辐射敏感记录材料。