利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.025 秒)

    Radiation-emitting semiconductor component
    1.
    发明授权
    Radiation-emitting semiconductor component 失效
    辐射发射半导体元件

    公开(公告)号：US06828597B2

    公开(公告)日：2004-12-07

    申请号：US10237472

    申请日：2002-09-09

    申请人： Walter Wegleiter ,  Klaus Streubel

    发明人： Walter Wegleiter ,  Klaus Streubel

    IPC分类号： H01L2922

    CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/44

    摘要： In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

    摘要翻译： 在具有半导体主体的辐射发射半导体部件中，该半导体器件包括辐射发生有源层，在半导体本体的前侧具有中心前侧接触和在半导体本体的背面上具有背面接触， 将电流施加到包含有源层的半导体本体中，背面接触包括彼此间隔开的多个接触位置，由此随着距离中心前侧接触件的距离的增加，接触位置的大小增加。

    Radiation detector
    8.
    发明授权
    Radiation detector 有权
    辐射检测器

    公开(公告)号：US08274657B2

    公开(公告)日：2012-09-25

    申请号：US12516831

    申请日：2007-11-29

    申请人： Arndt Jaeger ,  Peter Stauss ,  Klaus Streubel ,  Werner Kuhlmann

    发明人： Arndt Jaeger ,  Peter Stauss ,  Klaus Streubel ,  Werner Kuhlmann

    IPC分类号： G01J3/46

    CPC分类号： G01J1/4228 ,  G01J1/0488 ,  G01J3/36 ,  G01J3/46 ,  G01J3/465 ,  G01J3/50 ,  G01J3/51 ,  G01J3/513 ,  G01J2003/507 ,  H01L31/105

    摘要： A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

    摘要翻译： 公开了一种具有检测器装置的检测器装置，其具有多个检测器元件，通过该检测器元件在放射线检测器的操作期间获得检测器信号，并且具有控制装置，其中检测器元件各自具有光谱灵敏度分布 并且适于产生信号，至少一个检测器元件包括化合物半导体材料，并且该检测器元件被设计用于检测可见光谱区域中的辐射，辐射检测器被设计成使用检测器元件的灵敏度分布 为了形成辐射检测器的不同光谱灵敏度通道，可以使用检测器元件在这些灵敏度通道中产生分配给相应灵敏度通道的通道信号，并且控制装置被设计成使得不同通道信号对检测器信号的贡献 的辐射探测器是不同的控制 ed。

    Method for the connection of two wafers, and a wafer arrangement
    9.
    发明授权
    Method for the connection of two wafers, and a wafer arrangement 有权
    用于连接两个晶片的方法和晶片装置

    公开(公告)号：US07872210B2

    公开(公告)日：2011-01-18

    申请号：US11068291

    申请日：2005-02-28

    申请人： Klaus Streubel

    发明人： Klaus Streubel

    IPC分类号： B23K26/00

    CPC分类号： H01L21/2007 ,  H01L33/0079 ,  H01L2224/81224 ,  H01L2224/83224 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041

    摘要： A method for the connection of two wafers (11, 12), in which a contact area (15) is formed between the wafers (11, 12) by placing the two wafers one on top of the other, and in which the contact area (15) is heated locally and for a limited time. A wafer arrangement is also described in which two wafers (11, 12) which have been placed one on top of the other and between whose opposite surfaces a contact area (15) is located. The wafers are connected to one another at selected areas (21) of their contact area.

    摘要翻译： 一种用于连接两个晶片（11,12）的方法，其中通过将两个晶片放置在另一个晶片的顶部上而在晶片（11,12）之间形成接触区域（15），并且其中接触区域 （15）在局部加热有限的时间。 还描述了晶片装置，其中两个晶片（11,12）已经被放置在另一个的顶部上，并且在相对的表面之间设置有接触区域（15）。 晶片在其接触区域的选定区域（21）处彼此连接。

    Radiation-emitting semiconductor component
    10.
    发明授权
    Radiation-emitting semiconductor component 有权
    辐射发射半导体元件

    公开(公告)号：US07283577B2

    公开(公告)日：2007-10-16

    申请号：US11291692

    申请日：2005-11-30

    申请人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

    发明人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

    IPC分类号： H01S3/08

    CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/405 ,  H01L33/465 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/34326 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.

    摘要翻译： 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。