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公开(公告)号：US20100117051A1
公开(公告)日：2010-05-13
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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2.发明授权公开(公告)号：US07750386B2
公开(公告)日：2010-07-06
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L29/76 , H01L21/8242
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上被导电金属填充，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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3.发明申请公开(公告)号：US20100140578A1
公开(公告)日：2010-06-10
申请号：US12425071
申请日：2009-04-16
申请人： Wei Tian , Ming Sun , Michael Xuefei Tang , Dimitar V. Dimitrov
发明人： Wei Tian , Ming Sun , Michael Xuefei Tang , Dimitar V. Dimitrov
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2463 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Programmable metallization cells (PMC) that include a first electrode; a solid electrolyte layer including clusters of high ion conductive material dispersed in a low ion conductive material; and a second electrode, wherein either the first electrode or the second electrode is an active electrode, and wherein the solid electrolyte layer is disposed between the first electrode and the second electrode. Methods of forming them are also included herein.
摘要翻译： 包括第一电极的可编程金属化电池（PMC） 包括分散在低离子导电材料中的高离子导电材料簇的固体电解质层; 以及第二电极，其中所述第一电极或所述第二电极是有源电极，并且其中所述固体电解质层设置在所述第一电极和所述第二电极之间。 也包括形成它们的方法。
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公开(公告)号：US20100117170A1
公开(公告)日：2010-05-13
申请号：US12269537
申请日：2008-11-12
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要： A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译： 具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号：US08456903B2
公开(公告)日：2013-06-04
申请号：US12904254
申请日：2010-10-14
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要： A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译： 具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号：US07826181B2
公开(公告)日：2010-11-02
申请号：US12269537
申请日：2008-11-12
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要： A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译： 具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号：US20110026321A1
公开(公告)日：2011-02-03
申请号：US12904254
申请日：2010-10-14
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要： A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译： 具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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8.发明申请公开(公告)号：US20120142169A1
公开(公告)日：2012-06-07
申请号：US13368851
申请日：2012-02-08
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。
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公开(公告)号：US20120138884A1
公开(公告)日：2012-06-07
申请号：US13396731
申请日：2012-02-15
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
IPC分类号： H01L45/00
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
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10.发明申请公开(公告)号：US20100193758A1
公开(公告)日：2010-08-05
申请号：US12362532
申请日：2009-01-30
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。
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