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    Non-volatile multi-bit memory with programmable capacitance
    8.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 有权
    带可编程电容的非易失性多位存储器

    公开(公告)号：US07786463B2

    公开(公告)日：2010-08-31

    申请号：US12123685

    申请日：2008-05-20

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。

    Non-volatile multi-bit memory with programmable capacitance
    9.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 失效
    具有可编程电容的非易失性多位存储器

    公开(公告)号：US08766230B2

    公开(公告)日：2014-07-01

    申请号：US12857717

    申请日：2010-08-17

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。 栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。 固体电解质电池具有在至少两个状态之间可控制的电容。 栅极接触层电耦合到电压源。 第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。