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    Storage capacitor design for a solid state imager
    4.
    发明授权
    Storage capacitor design for a solid state imager 有权
    存储电容设计为固态成像仪

    公开(公告)号：US07145152B2

    公开(公告)日：2006-12-05

    申请号：US10687407

    申请日：2003-10-14

    申请人： Ji-Ung Lee ,  Douglas Albagli ,  George Edward Possin ,  William Andrew Hennessy ,  Ching-Yeu Wei

    发明人： Ji-Ung Lee ,  Douglas Albagli ,  George Edward Possin ,  William Andrew Hennessy ,  Ching-Yeu Wei

    IPC分类号： G02F1/136 ,  H01L31/115 ,  G06T11/00

    CPC分类号： H01L27/14658

    摘要： Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    摘要翻译： 存储电容设计为固态成像仪。 成像器包括以成像阵列图案设置在基板上的若干像素。 每个像素包括耦合到薄膜开关晶体管的光电传感器。 若干扫描线沿着第一轴相对于基板设置在第一水平面上，并且沿着成像阵列的第二轴将多条数据线布置在第二级。 沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。 每个像素包括与光电传感器并联耦合的存储电容器，存储电容器包括存储电容器电极和电容器公共电极。

    Storage capacitor design for a solid state imager
    5.
    发明申请
    Storage capacitor design for a solid state imager 有权
    存储电容设计为固态成像仪

    公开(公告)号：US20050078231A1

    公开(公告)日：2005-04-14

    申请号：US10687407

    申请日：2003-10-14

    申请人： Ji-Ung Lee ,  Douglas Albagli ,  George Possin ,  William Hennessy ,  Ching-Yeu Wei

    发明人： Ji-Ung Lee ,  Douglas Albagli ,  George Possin ,  William Hennessy ,  Ching-Yeu Wei

    IPC分类号： G01T1/20 ,  G02F1/136 ,  H01L21/02 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09

    CPC分类号： H01L27/14658

    摘要： Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    摘要翻译： 存储电容设计为固态成像仪。 成像器包括以成像阵列图案设置在基板上的若干像素。 每个像素包括耦合到薄膜开关晶体管的光电传感器。 若干扫描线沿着第一轴相对于衬底设置在第一水平面上，并且几个数据线沿着成像阵列的第二轴线设置在第二水平处。 沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。 每个像素包括与光电传感器并联耦合的存储电容器，存储电容器包括存储电容器电极和电容器公共电极。

    End cap and sealing method for imager
    7.
    发明授权
    End cap and sealing method for imager 有权
    成像器的端盖和密封方法

    公开(公告)号：US06350990B1

    公开(公告)日：2002-02-26

    申请号：US09433754

    申请日：1999-11-04

    申请人： Ching-Yeu Wei ,  Michael Clement DeJule

    发明人： Ching-Yeu Wei ,  Michael Clement DeJule

    IPC分类号： G01T700

    CPC分类号： H01L27/14618 ,  A61B6/502 ,  H01L27/14685 ,  H01L31/02322 ,  H01L2924/0002 ,  H04N5/32 ,  H01L2924/00

    摘要： An imager includes a substrate, a light-sensitive imaging array on the substrate, a scintillator over the array, and a cover over the scintillator sealed to the substrate. An edge of the array is situated close to an edge of the substrate relative to other edges of the array and substrate. A U-shaped end cap is sealed to and covers an edge of the cover, the edge of the substrate and a portion of each of the cover and substrate inward from their respective edges.

    摘要翻译： 成像器包括衬底，衬底上的感光成像阵列，阵列上的闪烁体，以及密封在衬底上的闪烁体上的盖。 阵列的边缘相对于阵列和衬底的其它边缘靠近衬底的边缘。 U形端盖被密封并覆盖盖的边缘，基板的边缘以及盖和衬底中的每一个的一部分从它们各自的边缘向内。

    Corrosion resistant imager
    8.
    发明授权
    Corrosion resistant imager 失效
    耐腐蚀成像仪

    公开(公告)号：US06225212B1

    公开(公告)日：2001-05-01

    申请号：US09468892

    申请日：1999-12-22

    申请人： Jianqiang Liu ,  Ching-Yeu Wei ,  Robert Forrest Kwasnick

    发明人： Jianqiang Liu ,  Ching-Yeu Wei ,  Robert Forrest Kwasnick

    IPC分类号： H01L2144

    CPC分类号： H01L27/14692 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

    摘要： A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    摘要翻译： 公开了一种辐射成像仪，其通过接触焊盘腐蚀，防护环腐蚀或光电二极管泄漏而抵抗由于水分引起的劣化。 公开了一种大面积成像器的接触焊盘，其形成为三个不同的和电连接的区域。 接触垫区域的结构形成可靠的接触，耐腐蚀损坏。 还公开了成像器或显示器的数据线，其中电阻通过在晶体管岛结构的顶部上图案化铝（Al）线而减少，所形成的数据线优选地被封装。 此外，公开了具有第一和第二区域和感光元件的保护环。 第二区域包括ITO和下面的金属之间的电接触以及用作防潮层的第二层，并且优选地设置在保护环的拐角处，并且以使腐蚀最小化的方式与成像器的接触垫分离 。 感光元件具有设置在顶部接触层和非晶硅光电传感器岛之间的多层钝化层，除了光电传感器岛的顶表面上的选定的接触区域，其中顶部接触层与非晶硅材料的非晶硅材料电接触 光电传感器岛。 钝化层包括至少设置在光电传感器岛侧壁上的第一层无机阻挡层。

    Method of fabricating solid state radiation imager with high integrity barrier layer
    9.
    发明授权
    Method of fabricating solid state radiation imager with high integrity barrier layer 失效
    制造具有高完整性阻挡层的固体辐射成像仪的方法

    公开(公告)号：US5585280A

    公开(公告)日：1996-12-17

    申请号：US459223

    申请日：1995-06-02

    申请人： Robert F. Kwasnick ,  Ching-Yeu Wei ,  Jack D. Kingsley

    发明人： Robert F. Kwasnick ,  Ching-Yeu Wei ,  Jack D. Kingsley

    IPC分类号： G01J1/02 ,  G01T1/20 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/055

    CPC分类号： H01L31/0216 ,  H01L31/02322 ,  H01L31/1055

    摘要： A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.

    摘要翻译： 辐射成像仪包括设置在非晶硅光电传感器阵列和闪烁体之间的光电传感器阻挡层。 阻挡层包括两层，第一层是设置在光传感器阵列的上导电层上的氧化硅，第二层是设置在第一层上的氮化硅。 光电传感器阻挡层具有基本上符合下面的上导电层的形状并具有约3微米的最大厚度的形状。 使用四乙氧基硅烷（TEOS）作为硅源气体，在小于约250℃的气相沉积工艺中沉积氧化硅和氮化硅。

    Radiation imager with common passivation dielectric for gate electrode and photosensor
    10.
    发明授权
    Radiation imager with common passivation dielectric for gate electrode and photosensor 失效
    具有公共钝化电介质的辐射成像仪用于栅电极和光电传感器

    公开(公告)号：US5435608A

    公开(公告)日：1995-07-25

    申请号：US261592

    申请日：1994-06-17

    申请人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

    发明人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

    IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L27/14643 ,  Y10S438/958

    摘要： A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

    摘要翻译： 具有耦合到光电二极管的薄膜晶体管（TFT）的固态辐射成像器像素，其中光电二极管和TFT各自包括公共介电层，即，跨越像素延伸并具有栅极电介质的单个电介质层 层部分和光电二极管主体钝化部分。 公共介电层包括诸如氮化硅或氧化硅的单片电介质材料。 此外，光电传感器主体的底部电极和栅极电极分别设置在基板的公共表面上并且包括相同的导电材料，导电材料已经在相同的沉积工艺中沉积在像素上。 用于光电二极管的源电极和漏电极和公共接触电极每个包括相同的源极/漏极金属导电材料，导电材料已经以相同的沉积工艺沉积在像素上。