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    Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices
    2.
    发明授权
    Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices 有权
    制造亚微米级CMOS器件的高热稳定接触形成工艺

    公开(公告)号：US06559050B1

    公开(公告)日：2003-05-06

    申请号：US09691907

    申请日：2000-10-19

    申请人： William R. McKee ,  Jiong-Ping Lu ,  Ming-Jang Hwang ,  Dirk N. Anderson ,  Wei Lee

    发明人： William R. McKee ,  Jiong-Ping Lu ,  Ming-Jang Hwang ,  Dirk N. Anderson ,  Wei Lee

    IPC分类号： H01L2144

    CPC分类号： H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

    摘要： A conducting plug/contact structure for use with integrated circuit includes a tungsten conducting plug formed in the via with a tungsten-silicon-nitride (WSiYNZ) region providing the interface between the tungsten conducting plug and the substrate (silicon) layer. The interface region is formed providing a nitrided surface layer over the exposed dielectric surfaces and the exposed substrate surface (i.e., exposed by a via in the dielectric layer) prior to the formation of tungsten/tungsten nitride layer filling the via. The structure is annealed forming a tungsten conducting plug with a tungsten-silicon-nitride interface between the conducting plug and the substrate. According to another embodiment, a tungsten nitride surface layer is formed over the nitrided surface layer prior to the formation of a tungsten layer to fill the via. According to another embodiment, a silicon surface layer is applied to the exposed surface of the dielectric layer and to the exposed surface of the substrate prior to formation of the nitrided surface layer. A layer of tungsten, tungsten/tungsten nitride, or tungsten nitride is formed to fill the via. After annealing, a tungsten conducting plug is formed with a tungsten-silicon-nitride interface region with the substrate.

    摘要翻译： 与集成电路一起使用的导电插头/接触结构包括形成在通孔中的钨导电插塞，其中钨硅氮化物（WSiYNZ）区域提供钨导电插塞和衬底（硅）层之间的界面。 在形成填充通孔的钨/氮化钨层之前，形成界面区域，在暴露的电介质表面和暴露的衬底表面上（即，通过电介质层中的通孔暴露）提供氮化表面层。 该结构退火形成导电插塞和基板之间的钨 - 氮化硅界面的钨导电塞。 根据另一个实施例，在形成钨层以填充通孔之前，氮化表面层上形成氮化钨表面层。 根据另一实施例，在形成氮化表面层之前，将硅表面层施加到介电层的暴露表面和衬底的暴露表面。 形成一层钨，钨/氮化钨或氮化钨以填充通孔。 在退火之后，形成具有与基板的钨 - 氮化硅界面区域的钨导电塞。

    Method of forming capacitors
    4.
    发明授权
    Method of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US08088659B2

    公开(公告)日：2012-01-03

    申请号：US12769306

    申请日：2010-04-28

    申请人： Jiong-Ping Lu ,  Ming-Jang Hwang

    发明人： Jiong-Ping Lu ,  Ming-Jang Hwang

    IPC分类号： H01L21/8242

    CPC分类号： C23C16/34 ,  C23C16/56 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31683 ,  H01L27/1085 ,  H01L28/40 ,  H01L28/57

    摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

    摘要翻译： 通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。 所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。

    NOVEL HIGH-K DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURING THEM
    6.
    发明申请
    NOVEL HIGH-K DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURING THEM 有权
    新型高K电介质材料及其制造工艺

    公开(公告)号：US20100227450A1

    公开(公告)日：2010-09-09

    申请号：US12769306

    申请日：2010-04-28

    申请人： Jiong-Ping Lu ,  Ming-Jang Hwang

    发明人： Jiong-Ping Lu ,  Ming-Jang Hwang

    IPC分类号： H01L21/02

    CPC分类号： C23C16/34 ,  C23C16/56 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31683 ,  H01L27/1085 ,  H01L28/40 ,  H01L28/57

    摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

    摘要翻译： 通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。 所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。

    Process for depositing thin films containing titanium and nitrogen
    8.
    发明授权
    Process for depositing thin films containing titanium and nitrogen 失效
    用于沉积含有钛和氮的薄膜的方法

    公开(公告)号：US06365517B1

    公开(公告)日：2002-04-02

    申请号：US09010373

    申请日：1998-01-21

    申请人： Jiong-Ping Lu ,  Ming-Jang Hwang

    发明人： Jiong-Ping Lu ,  Ming-Jang Hwang

    IPC分类号： H01L21443

    CPC分类号： H01L21/76843 ,  C23C16/30 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/75 ,  H01L28/82 ,  H01L28/90

    摘要： An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl4, H2, and N2; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl4, H2, and N2 and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH4 so as to form a TiSixNy film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B2H6 so as to form a TiNxBy layer over the semiconductor wafer.

    摘要翻译： 本发明的一个实施方案是在半导体晶片上沉积TiN基膜的方法，该方法包括以下步骤：基本上同时使半导体晶片经历TiCl 4，H 2和N 2; 并且使半导体晶片经受等离子体，使得TiCl 4，H 2和N 2与等离子体的组合导致在半导体晶片上形成TiN基膜的沉积。 本发明的另一实施例涉及另外对半导体晶片进行SiH4的处理，以便在半导体晶片上形成TiSixNy膜。 本发明的另一实施例涉及另外对半导体晶片进行B2H6的处理，以在半导体晶片上形成TiNxBy层。

    High-K dielectric materials and processes for manufacturing them
    9.
    发明授权
    High-K dielectric materials and processes for manufacturing them 有权
    高K介电材料及其制造方法

    公开(公告)号：US07732852B2

    公开(公告)日：2010-06-08

    申请号：US11499308

    申请日：2006-08-03

    申请人： Jiong-Ping Lu ,  Ming-Jang Hwang

    发明人： Jiong-Ping Lu ,  Ming-Jang Hwang

    IPC分类号： H01L27/108

    CPC分类号： C23C16/34 ,  C23C16/56 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31683 ,  H01L27/1085 ,  H01L28/40 ,  H01L28/57

    摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

    摘要翻译： 通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。 所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。