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    METHOD FOR FABRICATING A CONDUCTIVE PLUG IN INTEGRATED CIRCUIT
    1.
    发明申请
    METHOD FOR FABRICATING A CONDUCTIVE PLUG IN INTEGRATED CIRCUIT 审中-公开
    在集成电路中制作导电插片的方法

    公开(公告)号：US20050048766A1

    公开(公告)日：2005-03-03

    申请号：US10605007

    申请日：2003-08-31

    申请人： Wen-Chieh Wu ,  Yi-Nan Chen ,  Chun-Yi Wu

    发明人： Wen-Chieh Wu ,  Yi-Nan Chen ,  Chun-Yi Wu

    IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/22 ,  H01L21/38 ,  H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/28525

    摘要： A method for fabricating a conductive plug device is disclosed. A semiconductor substrate having a diffusion region thereon is provided. A dielectric layer is deposited over the semiconductor substrate. An opening is formed in the dielectric layer to expose a portion of the diffusion region. An un-doped CVD silicon layer is deposited on interior walls of the opening. A pure CVD phosphorus layer is in-situ deposited on the un-doped CVD silicon layer. The pure CVD phosphorus layer thereafter diffuses into the subjacent un-doped CVD silicon layer to form a doped silicon layer. Subsequently, a second un-doped CVD silicon layer is in-situ deposited on the doped silicon layer.

    摘要翻译： 公开了一种制造导电塞装置的方法。 提供其上具有扩散区域的半导体衬底。 介电层沉积在半导体衬底上。 在电介质层中形成开口以暴露扩散区的一部分。 未掺杂的CVD硅层沉积在开口的内壁上。 在未掺杂的CVD硅层上原位沉积纯的CVD磷层。 然后，纯的CVD磷层扩散到下面的未掺杂的CVD硅层中以形成掺杂的硅层。 随后，第二未掺杂的CVD硅层原位沉积在掺杂的硅层上。

    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    2.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20120256164A1

    公开(公告)日：2012-10-11

    申请号：US13528059

    申请日：2012-06-20

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/06

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    摘要翻译： 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US07973331B2

    公开(公告)日：2011-07-05

    申请号：US12318552

    申请日：2008-12-31

    申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

    摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

    Activity Detection Circuit for a Storage Device
    5.
    发明申请
    Activity Detection Circuit for a Storage Device 审中-公开
    存储设备的活动检测电路

    公开(公告)号：US20080231439A1

    公开(公告)日：2008-09-25

    申请号：US11689731

    申请日：2007-03-22

    申请人： Chun-Yi Wu

    发明人： Chun-Yi Wu

    IPC分类号： G08B21/00

    CPC分类号： G06F11/325

    摘要： An activity detection circuit for a storage device including a sampling module, a logic module, and an indication module. The sampling module is for detecting a state interface of the storage device by a reference signal. The logic module is for determining a state of the storage device according to a detection result generated by the sampling module. The indication module includes a light emitting device, wherein when the storage device is in a connected state, the light emitting device emits constant light, and when the storage device is in a read/write state, the light emitting device emits flickering light. The present invention also provides a storage module including a storage device, a connection port and the activity detection circuit described above.

    摘要翻译： 一种用于包括采样模块，逻辑模块和指示模块的存储装置的活动检测电路。 采样模块用于通过参考信号检测存储设备的状态接口。 逻辑模块用于根据由采样模块生成的检测结果来确定存储设备的状态。 指示模块包括发光装置，其中当存储装置处于连接状态时，发光装置发出恒定的光，并且当存储装置处于读/写状态时，发光装置发射闪烁的光。 本发明还提供了一种存储模块，包括上述存储装置，连接端口和活动检测电路。

    Small size ultra-wideband antenna
    6.
    发明申请
    Small size ultra-wideband antenna 有权
    小尺寸超宽带天线

    公开(公告)号：US20070069959A1

    公开(公告)日：2007-03-29

    申请号：US11258805

    申请日：2005-10-26

    申请人： Chun-Yi Wu

    发明人： Chun-Yi Wu

    IPC分类号： H01Q1/38

    CPC分类号： H01Q9/0442 ,  H01Q5/50

    摘要： A small size ultra-wideband (UWB) antenna comprises a radiation element, a dielectric substrate, and a dielectric element. The radiation element includes a radiation conductor, a matching element, and an antenna feeding element. A signal feeding element and a conductor plane are formed on the upper and lower surfaces of the dielectric substrate, respectively. With the matching element on the radiation conductor, the current distribution on the conductor plane is changed so that the antenna achieves a sufficient extension for both high and low impedance bandwidths. The UWB antenna is also suitable for surface-mountable fabrication process, and which effectively reduce the manufacturing cost. The antenna has the advantages of small size, simple structure, and an impedance bandwidth of 7.97 GHz.

    摘要翻译： 小尺寸超宽带（UWB）天线包括辐射元件，电介质基底和电介质元件。 辐射元件包括辐射导体，匹配元件和天线馈送元件。 信号馈送元件和导体平面分别形成在电介质基板的上表面和下表面上。 通过辐射导体上的匹配元件，改变导体平面上的电流分布，使天线实现高阻抗和低阻抗带宽的充分扩展。 UWB天线也适用于表面贴装制造工艺，有效降低了制造成本。 该天线具有体积小，结构简单，阻抗带宽7.97GHz的优点。

    Photoelectronic device
    7.
    发明授权
    Photoelectronic device 有权
    光电器件

    公开(公告)号：US08845143B2

    公开(公告)日：2014-09-30

    申请号：US12289478

    申请日：2008-10-29

    申请人： Chia-Liang Hsu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： F21V5/00 ,  H01L33/54 ,  H01L33/48

    CPC分类号： H01L33/54 ,  H01L33/483 ,  Y10S362/80

    摘要： A photoelectronic device including a carrier, a light-emitting component mounted on the carrier; a patterned structure deposited on the carrier and around the light-emitting component; and a transparent sealing structure formed above the light-emitting component. The patterned structure mentioned above can cause the transparent sealing structure to be focused above the light-emitting component, and restrained in the patterned structure. The transparent sealing structure with predetermined proportional configuration is obtained by controlling the quantity of the transparent sealing structure. Therefore light efficiency of the photoelectronic device can be greatly improved.

    摘要翻译： 一种光电子器件，包括载体，安装在载体上的发光部件; 沉积在载体上并围绕发光部件的图案化结构; 以及形成在发光部件上方的透明密封结构。 上述图案化结构可以使透明密封结构聚焦在发光部件的上方，并被限制在图案化结构中。 通过控制透明密封结构的数量来获得具有预定比例构型的透明密封结构。 因此，可以大大提高光电子器件的光效率。

    Optoelectronic device and the manufacturing method thereof
    9.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US08474233B2

    公开(公告)日：2013-07-02

    申请号：US13528059

    申请日：2012-06-20

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/06

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    摘要翻译： 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。