摘要:
A vertical-external-cavity surface-emitting laser (VECSEL) is formed by providing a monolithic portion having a first laser cavity mirror and an active region disposed on the first mirror. The cavity is completed with a second laser cavity mirror, such as a DBR, deposited onto the light-receiving end of an optical device, such as an optical fiber. The DBR-on-fiber-end is mounted with respect to the active region to complete the laser cavity and to provide automatic coupling of the output laser light into the fiber.
摘要:
A metal bonded vertical-cavity surface-emitting laser (VCSEL) structure with a bottom dielectric distributed Bragg reflector (DBR) mirror, and method for fabricating the VCSEL structure. The VCSEL structure consists a metal bonding layer disposed on a submount at a bottom side of the metal bonding layer; a bottom cavity mirror comprising a bottom dielectric distributed Bragg reflector (DBR) disposed within the metal bonding layer, the bottom dielectric DBR having a reflectance band including the lasing wavelength; a bottom current-spreading layer disposed on said bottom dielectric DBR and on a substantially flat, annular top surface of said metal bonding layer; a semiconductor active region disposed on the bottom current-spreading layer, said active region capable of stimulated emission at the lasing wavelength; and a top cavity mirror disposed above the active region and having a reflectance band including the lasing wavelength.
摘要:
An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second As semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.
摘要:
A method is provided, the method comprising forming a first of n masking layers for a device and forming a first of n phase-shift layers for the device using the first of the n masking layers. The method also comprises forming a second of n masking layers for a device, and forming a second of n phase-shift layers for the device using the second of the n masking layers and forming at least n+1 and at most 2n different optical thicknesses for the device using the n masking layers and the n phase-shift layers.
摘要:
A device is provided, the device comprising a first vertical cavity surface-emitting laser (VCSEL) of a monolithic vertical cavity surface-emitting laser (VCSEL) array, the first vertical cavity surface-emitting laser (VCSEL) being tunable to a first plurality of wavelengths. The device also comprises a second vertical cavity surface-emitting laser (VCSEL) of the monolithic vertical cavity surface-emitting laser (VCSEL) array, the second vertical cavity surface-emitting laser (VCSEL) being tunable to a second plurality of wavelengths, wherein at least one wavelength is in both the first plurality of wavelengths and the second plurality of wavelengths.
摘要:
In a laser package, a tilted laser causes laser light to be coupled into an optical fiber at an angle relative to a fiber axis of the optical fiber. The tilted laser emits laser light at an angle relative to a lens axis of a lens such that the lens directs and focuses the laser light at the angle relative to the fiber axis. Tilting the laser allows the laser light to be coupled into the optical fiber substantially parallel to or aligned with the core of the fiber while causing back reflection to be directed away from the laser, thereby improving coupling efficiency and minimizing feedback. The tilted laser may be coupled to an angle polished fiber, for example, in a laser package such as a TO can type laser package, a butterfly type laser package, or a TOSA type laser package.
摘要:
A method for fabricating a laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength is formed. A grating is formed adjacent to the active region, the grating having a grating period corresponding to a Bragg wavelength substantially equal to the lasing wavelength. An intermediate section of the grating is removed to result in first and second pluralities of gratings separated by a gratingless intermediate section. First and second grating sections are formed comprising the first and second pluralities of gratings, where the first and second grating sections each have a first effective index of refraction. A gratingless phase-shift section is formed in said intermediate section, the phase-shift section being disposed adjacent to the active region and between the first and second grating sections and having a second index of refraction different than the first index of refraction. The phase-shift section has a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation. Alternatively, a grating material layer is deposited adjacent to the active region, the grating material layer having a first section, a second section, and an intermediate section between the first and second sections. Gratings are formed in the first and second sections to form a first grating section in the first section, a second grating section in the second section, leaving a gratingless phase-shift section in the intermediate section.
摘要:
A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.
摘要:
An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region amplifies, by stimulated emission, light in the laser cavity at the lasing wavelength. A first grating section adjacent to the active region and having a first reflectance and a first effective index of refraction. A second grating section adjacent to the active region and having a second reflectance and the first effective index of refraction. The first and second grating sections have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section is disposed adjacent to the active region and between the first and second grating sections and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation.
摘要:
An extended cavity Fabry-Perot laser assembly provides relatively narrow mode spacing while allowing relatively high speed optical modulation. The extended cavity Fabry-Perot laser assembly generally includes an exit reflector physically separated from a laser emitter (e.g., a gain chip) to extend the lasing cavity and narrow the mode spacing while maintaining a relatively small gain region in the laser emitter capable of higher speed optical modulation. The extended cavity Fabry-Perot laser assembly may be used in a multi-channel transmitter in a wavelength division multiplexed (WDM) optical system that selects a channel wavelength for the transmitter from among multiple channel wavelengths emitted by the laser assembly. The narrow mode spacing may be less than a WDM channel width, and more specifically, may be less than a channel passband of an arrayed waveguide grating (AWG) or other filter used to select the channel wavelength.