公开(公告)号：US06274059B1

公开(公告)日：2001-08-14

申请号：US08615520

申请日：1996-03-11

申请人： Wilbur C. Krusell ,  Igor J. Malik

发明人： Wilbur C. Krusell ,  Igor J. Malik

IPC分类号： B44C122

CPC分类号： H01L21/02052 ,  B08B1/04 ,  B08B3/08

摘要： A method to remove metal contaminants in a substrate cleaning process. The present invention may replace or be used in conjunction with other substrate cleaning systems. This method comprises adding a citric acid solution to the liquid medium of a semiconductor substrate cleaning system. This method is described in the manner it is used in conjunction with a scrubber wherein both sides of a wafer are scrubbed.

摘要翻译： 在基板清洗过程中去除金属污染物的方法。 本发明可以替代或与其它基材清洁系统结合使用。 该方法包括向半导体衬底清洗系统的液体介质中加入柠檬酸溶液。 以与洗涤器结合使用的方式描述该方法，其中洗涤两个晶片。

公开(公告)号：US07253081B2

公开(公告)日：2007-08-07

申请号：US09893340

申请日：2001-06-26

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21/30

CPC分类号： H01L21/3065 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/967

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

公开(公告)号：US06969668B1

公开(公告)日：2005-11-29

申请号：US09710628

申请日：2000-11-08

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/46 ,  H01L21/311 ,  H01L21/11

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S148/012

摘要： A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium arsenide, gallium nitride, quartz). The substrate has a film characterized by a non-uniform surface, which includes a plurality of defects. At least some of the defects are of a size ranging from about 100 Angstroms and greater. The method also includes applying a combination of a deposition species for deposition of a deposition material and an etching species for etching etchable material. The combination of the deposition species and the etching species contact the non-uniform surface in a thermal setting to reduce a level of non-uniformity of the non-uniform surface by filling a portion of the defects to smooth the film of material. The smoothed film of material is substantially free from the defects and is characterized by a surface roughness of a predetermined value.

摘要翻译： 一种制造衬底的方法，例如体晶片，绝缘体上硅晶片，硅片上的硅片，光电衬底。 该方法包括提供衬底（例如，硅，砷化镓，氮化镓，石英）。 基板具有由不均匀的表面表征的膜，其包括多个缺陷。 至少一些缺陷的尺寸范围为约100埃或更大。 该方法还包括应用用于沉积沉积材料的沉积物质和用于蚀刻可蚀刻材料的蚀刻物质的组合。 沉积物质和蚀刻物质的组合在热定形中接触非均匀表面，以通过填充一部分缺陷来平滑材料膜来降低不均匀表面的不均匀度。 平滑的材料膜基本上没有缺陷，其特征在于具有预定值的表面粗糙度。

公开(公告)号：US06265328B1

公开(公告)日：2001-07-24

申请号：US09239477

申请日：1999-01-28

申请人： Francois J. Henley ,  Nathan Cheung ,  William G. Eng ,  Igor J. Malik

发明人： Francois J. Henley ,  Nathan Cheung ,  William G. Eng ,  Igor J. Malik

IPC分类号： B05C1102

CPC分类号： H01L21/67092 ,  H01L21/6708 ,  H01L21/6715

摘要： The present invention provides an apparatus (400) (500) for abating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.

摘要翻译： 本发明提供一种用于从衬底（例如SOI）减缓边缘材料的装置（400）（500）。 除了其它元件之外，该装置包括壳体和联接到壳体的可旋转构件（401）。 可旋转构件是一个基座，它相对平坦，用于固定基板。 可移动分配头（421）联接到壳体并且覆盖在可旋转构件上。 可移动分配头（421）可操作以将定向流体流发射到基座的一个或多个位置。 该装置还包括流体源，其连接到可移动分配头。 流体源提供流体以从基底中烧蚀材料。

公开(公告)号：US07391047B2

公开(公告)日：2008-06-24

申请号：US11378126

申请日：2006-03-17

申请人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

发明人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/0336 ,  H01L31/0328

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

摘要翻译： 一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。 该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。 该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。 优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。 该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。 该方法提供具有第二厚度的第二基底，其具有面和背面。 该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。 将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。 优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

公开(公告)号：US07390724B2

公开(公告)日：2008-06-24

申请号：US11104298

申请日：2005-04-11

申请人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik

发明人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.

摘要翻译： 一种用于制造多层基片的系统。 该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。 支撑构件附接到材料膜的第一侧。 第二种状态包括压力状态。 该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。 支撑构件能够从材料膜的第一侧分离，从而使包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

公开(公告)号：US07094666B2

公开(公告)日：2006-08-22

申请号：US11043477

申请日：2005-01-24

申请人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

发明人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

公开(公告)号：US06171965B2

公开(公告)日：2001-01-09

申请号：US09295858

申请日：1999-04-21

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21311

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S148/012

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。 衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在带有蚀刻剂的环境中，以将预定的表面粗糙度值降低约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US08187377B2

公开(公告)日：2012-05-29

申请号：US10264393

申请日：2002-10-04

申请人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

发明人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

IPC分类号： C30B33/00

CPC分类号： H01L21/3065 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02658

摘要： The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

摘要翻译： 本发明提供用于处理半导体材料的表面。 该方法包括在高温下在氢气环境中将半导体材料的表面暴露于卤素蚀刻剂。 该方法控制半导体材料的表面粗糙度。 该方法还具有减少半导体材料中位错的意想不到的好处。

公开(公告)号：US20080141510A1

公开(公告)日：2008-06-19

申请号：US12070574

申请日：2008-02-19

申请人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

发明人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

IPC分类号： H01L21/67

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

摘要翻译： 一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。 该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。 该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。 优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。 该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。 该方法提供具有第二厚度的第二基底，其具有面和背面。 该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。 将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。 优选地，使用诸如等离子体激活键合等的低温工艺进行接合。