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9 条记录 (耗时 0.017 秒)

    Method for producing a phase mask
    1.
    发明授权
    Method for producing a phase mask 失效
    相位掩模的制造方法

    公开(公告)号：US07462426B2

    公开(公告)日：2008-12-09

    申请号：US11056402

    申请日：2005-02-14

    申请人： Wolfgang Henke ,  Gerhard Kunkel

    发明人： Wolfgang Henke ,  Gerhard Kunkel

    IPC分类号： G03F1/00 ,  G03C5/00

    CPC分类号： G02B27/14 ,  G03C5/00 ,  G03F1/32

    摘要： A first and a second phase-shifting, semitransparent layer are formed on a substrate. The layers are patterned lithographically to form first elevated structure elements on the substrate with a first degree of transmission and second structure elements with a second degree of transmission, where the second degree of transmission is different from the first degree of transmission. Memory products can be produced with high resolution and high dimensional accuracy when the structure elements are transferred to a semiconductor substrate, by virtue of dense structure arrangements being represented by the structure elements with a high degree of transmission of more than 30% and, on the same mask, isolated structure arrangements having a low density being represented by the structure elements with a lower degree of transmission.

    摘要翻译： 在基板上形成第一和第二相移半透明层。 这些层被光刻地图案化以形成具有第一传播程度的第一高度结构元件和具有第二传输度的第二结构元件，其中第二传播距离与第一传播程度不同。 当结构元件被转移到半导体衬底时，由于结构元件以高度透过率超过30％的结构元件表示的密集结构布置，可以以高分辨率和高尺寸精度制造存储器产品，并且在 具有低密度的相同的掩模，隔离结构布置由具有较低透射度的结构元件表示。

    Method for producing a phase mask
    2.
    发明申请
    Method for producing a phase mask 失效
    相位掩模的制造方法

    公开(公告)号：US20050196683A1

    公开(公告)日：2005-09-08

    申请号：US11056402

    申请日：2005-02-14

    申请人： Wolfgang Henke ,  Gerhard Kunkel

    发明人： Wolfgang Henke ,  Gerhard Kunkel

    IPC分类号： G02B27/14 ,  G03C5/00 ,  G03F1/00 ,  G03F9/00

    CPC分类号： G02B27/14 ,  G03C5/00 ,  G03F1/32

    摘要： A first and a second phase-shifting, semitransparent layer are formed on a substrate. The layers are patterned lithographically to form first elevated structure elements on the substrate with a first degree of transmission and second structure elements with a second degree of transmission, where the second degree of transmission is different from the first degree of transmission. Memory products can be produced with high resolution and high dimensional accuracy when the structure elements are transferred to a semiconductor substrate, by virtue of dense structure arrangements being represented by the structure elements with a high degree of transmission of more than 30% and, on the same mask, isolated structure arrangements having a low density being represented by the structure elements with a lower degree of transmission.

    摘要翻译： 在基板上形成第一和第二相移半透明层。 这些层被光刻地图案化以形成具有第一传播程度的第一高度结构元件和具有第二传输度的第二结构元件，其中第二传播距离与第一传播程度不同。 当结构元件被转移到半导体衬底时，由于结构元件以高度透过率超过30％的结构元件表示的密集结构布置，可以以高分辨率和高尺寸精度制造存储器产品，并且在 具有低密度的相同的掩模，隔离结构布置由具有较低透射度的结构元件表示。

    METHOD OF CALIBRATING A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT
    6.
    发明申请
    METHOD OF CALIBRATING A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT 有权
    校正光刻设备的方法，设备制造方法和相关数据处理设备和计算机程序产品

    公开(公告)号：US20140168620A1

    公开(公告)日：2014-06-19

    申请号：US14103486

    申请日：2013-12-11

    申请人： Emil Peter SCHMITT-WEAVER ,  Paul Frank Luehrmann ,  Wolfgang Henke ,  Marc Jurian Kea

    发明人： Emil Peter SCHMITT-WEAVER ,  Paul Frank Luehrmann ,  Wolfgang Henke ,  Marc Jurian Kea

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70516

    摘要： A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

    摘要翻译： 使用具有以已知图案分布在其表面上的一组第一标记的校准基板校准光刻工具。 操作该工具以在衬底上的各个位置上施加包括多个第二标记的图案，每个第二标记覆盖第一标记中的一个并且受到依赖于设备特异性偏差的覆盖误差。 当衬底保持加载在工具中时，通过多次曝光施加第二标记。 该装置的操作参数在曝光之间变化。 测量覆盖误差，并用于根据每次曝光所用参数变化的知识来计算特定于设备的校准数据。

    Alignment Calculation
    8.
    发明申请
    Alignment Calculation 失效
    对齐计算

    公开(公告)号：US20100030360A1

    公开(公告)日：2010-02-04

    申请号：US12184798

    申请日：2008-08-01

    申请人： Boris Habets ,  Michiel Kupers ,  Wolfgang Henke

    发明人： Boris Habets ,  Michiel Kupers ,  Wolfgang Henke

    IPC分类号： G06F19/00

    CPC分类号： G03F7/705 ,  G03F7/70508 ,  G03F7/70533 ,  G03F7/70633 ,  G03F9/7003

    摘要： Alignment data from an exposure tool suitable for exposing a plurality of semiconductor wafers are provided, the alignment data including alignment values applied by the exposure tool to respective ones of the plurality of semiconductor wafers at a plurality of measured positions.

    摘要翻译： 提供了适用于暴露多个半导体晶片的曝光工具的对准数据，对准数据包括由多个测量位置中的曝光工具施加到多个半导体晶片中的相应半导体晶片的对准值。