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    AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell
    5.
    发明授权
    AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell 有权
    交流发光二极管具有全波发光单元和半波发光单元

    公开(公告)号：US08354680B2

    公开(公告)日：2013-01-15

    申请号：US12882406

    申请日：2010-09-15

    申请人： Dae Sung Kal ,  Won Cheol Seo ,  Jang Woo Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Sang Ki Jin ,  So Ra Lee

    发明人： Dae Sung Kal ,  Won Cheol Seo ,  Jang Woo Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Sang Ki Jin ,  So Ra Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.

    摘要翻译： 本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元 每个具有阳极端子和阴极端子的发光单元。 在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。 由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

    Light emitting diode
    6.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08283682B2

    公开(公告)日：2012-10-09

    申请号：US13111406

    申请日：2011-05-19

    申请人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L29/20

    CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and are symmetric with respect to those of adjacent another of the light emitting cells.

    摘要翻译： 本发明包括一个衬底和至少一个串联阵列，其具有串联连接在衬底上的多个发光单元。 每个发光单元包括下半导体层，上半导体层，插入在下半导体层和上半导体层之间的有源层，形成在暴露于基板的第一角的下半导体层上的下电极，上电极 形成在所述上半导体层上的层，以及形成在所述上电极层上的上电极焊盘，所述上电极焊盘在所述衬底的第二拐角处露出。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且相对于相邻的发光单元的对角。

    METHOD OF FABRICATING LIGHT EMITING DIODE CHIP
    7.
    发明申请
    METHOD OF FABRICATING LIGHT EMITING DIODE CHIP 有权
    制造光二极管芯片的方法

    公开(公告)号：US20100041173A1

    公开(公告)日：2010-02-18

    申请号：US12442617

    申请日：2007-09-14

    申请人： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

    发明人： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

    IPC分类号： H01L33/00 ,  H01L21/78

    CPC分类号： H01L33/0095 ,  H01L33/20

    摘要： The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

    摘要翻译： 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

    Method of fabricating AC light emitting device having photonic crystal structure
    8.
    发明授权
    Method of fabricating AC light emitting device having photonic crystal structure 有权
    制造具有光子晶体结构的AC发光器件的方法

    公开(公告)号：US07901964B2

    公开(公告)日：2011-03-08

    申请号：US12546155

    申请日：2009-08-24

    申请人： Jae-Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Jae-Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

    摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

    摘要翻译： 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

    Method of fabricating light emitting diode chip
    9.
    发明授权
    Method of fabricating light emitting diode chip 有权
    制造发光二极管芯片的方法

    公开(公告)号：US08481352B2

    公开(公告)日：2013-07-09

    申请号：US13089544

    申请日：2011-04-19

    申请人： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

    发明人： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

    IPC分类号： H01L21/304 ,  H01L27/15 ,  H01L33/00

    CPC分类号： H01L33/0095 ,  H01L33/20

    摘要： The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

    摘要翻译： 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。