Abstract:
Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided.
Abstract:
Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked.
Abstract:
Provided are a thin film transistor able to increase or maximize productivity and production yield, and a method of fabricating the same. The method of fabricating the thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer formed of an amorphous oxide semiconductor on the gate insulating layer, and respectively forming a source electrode and a drain electrode on both sides of the active layer above the gate electrode. The amorphous oxide semiconductor of the active layer may be doped with a metal oxide dielectric.
Abstract:
Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked.
Abstract:
Provided are a photomixer module and a method of generating a terahertz wave. The photomixer module includes a semiconductor optical amplifier amplifying incident laser light and a photomixer that is excited by the amplified laser light to generate a continuous terahertz wave. The photomixer is formed as a single module together with the semiconductor optical amplifier.
Abstract:
A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
Abstract:
Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes.
Abstract:
Provided is a multiple distributed feedback laser device. The laser device includes an active layer, a first diffraction grating, and a second diffraction grating. The substrate includes a first distributed feedback region, a modulation region, and a second distributed feedback region. The first diffraction grating is coupled to the active layer in the first distributed feedback region. The second diffraction grating is coupled to the active layer in the second distributed feedback region. In addition, the laser device includes a first micro heater and a second micro heater. The first micro heater supplies heat to the first diffraction grating. The second micro heater supplies heat to the second diffraction grating. The first micro heater and the second micro heater are controlled independently from each other.
Abstract:
Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.
Abstract:
Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying the laser beam generated in the light source to the first and second resonators and again feeding back the laser beam having the first and second wavelengths resonated respectively in the first and second resonators to the light source.