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    Preparation of silicon melt for use in pull method of manufacturing single crystal
    3.
    发明授权
    Preparation of silicon melt for use in pull method of manufacturing single crystal 失效
    制备用于制造单晶拉制法的硅熔体

    公开(公告)号：US5477805A

    公开(公告)日：1995-12-26

    申请号：US350533

    申请日：1994-12-07

    申请人： Koji Izunome ,  Xin ming Huang ,  Kazutaka Terashima ,  Shigeyuki Kimura

    发明人： Koji Izunome ,  Xin ming Huang ,  Kazutaka Terashima ,  Shigeyuki Kimura

    IPC分类号： C30B15/00 ,  C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/00

    摘要： A Si material mixed with Group-V element is melted in a crucible, and then held in a chamber filled with a rare gas at atmospheric pressure of 100 torr. or higher. A rare gas, e.g. Ar, Kr, Xe or Rn, having a large mass or the mixture of Ar with Kr, Xe or Rn may be used as atmospheric gas. The high-pressure atmosphere suppress the evaporation of oxides of Group-V elements from the Si melt, so that the Si melt can be maintained at a high oxygen concentration under a stable condition until the start of pulling operation.

    摘要翻译： 将与V族元素混合的Si材料在坩埚中熔化，然后在100托的大气压下保持在填充有稀有气体的室中。 或更高。 稀有气体，例如 具有大质量的Ar，Kr，Xe或Rn，Ar与Kr，Xe或Rn的混合物可以用作气氛。 高压气氛抑制了来自Si熔体的V族元素的氧化物的蒸发，使得在稳定的条件下，Si熔体可以保持在高氧浓度，直到开始拉动操作。

    Growth of silicon crystal from melt having extraordinary eddy flows on its surface
    4.
    发明授权
    Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
    来自熔体的硅晶体在其表面上生长具有非凡的涡流

    公开(公告)号：US5704974A

    公开(公告)日：1998-01-06

    申请号：US620873

    申请日：1996-03-22

    申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B15/22

    CPC分类号： C30B29/06 ,  C30B15/30

    摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.

    摘要翻译： 当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。 根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。 在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。 由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。 以这种方式获得的单晶具有高度稳定的质量。

    Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction
    5.
    发明授权
    Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction 失效
    长度方向或径向均匀杂质分布的硅单晶的生长

    公开(公告)号：US5700320A

    公开(公告)日：1997-12-23

    申请号：US620391

    申请日：1996-03-22

    申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    IPC分类号： C30B15/00 ,  C30B15/04

    CPC分类号： C30B29/06 ,  C30B15/00

    摘要： When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth. When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction. Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.

    摘要翻译： 当通过Czochralski方法从B或P掺杂的熔体中提取B或P掺杂的Si单晶时，可以使用诸如Ga，Sb或In的元素，其具有在温度下降低所述熔体的热膨胀系数 在熔点附近加入熔融物。 添加元素稳定了晶体生长的温度条件，从而控制刚好低于晶体生长界面的涡流的产生。 当从Ga或Sb掺杂的熔体中提取Ga或Sb掺杂的Si单晶时，添加诸如B或P的元素，其在熔点附近的温度下增加所述熔体的热膨胀系数， 。 通过添加B或P来促进刚好低于晶体生长界面的熔体的搅拌，以确保Si单晶从具有沿径向方向均匀的杂质分布的熔体生长。 因此，形成沿着其长度方向或径向方向具有均匀杂质分布的Si单晶。

    Growth of silicon single crystal
    6.
    发明授权
    Growth of silicon single crystal 失效
    硅单晶的生长

    公开(公告)号：US5683504A

    公开(公告)日：1997-11-04

    申请号：US621054

    申请日：1996-03-22

    申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  H01L21/208

    CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S117/901

    摘要： When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.

    摘要翻译： 当从熔体中拉出单晶时，控制坩埚底部温度和晶体生长界面处的差ΔTA，以保持由以下公式定义的瑞利常数：R a = g xβ x DELTA TxL / kappa x nu在5×10 5 -4×10 7的范围内，其中g表示重力的加速度，β表示熔体的体积膨胀系数，L表示熔体的深度，κ热扩散率和nu的运动粘度。 由于晶体生长界面处的熔体的对流模式不断地保持在软湍流区域，所以在稳定的温度条件下生长单晶，而不会将熔体中的杂质分布转移到生长的单晶中。

    Near field analysis apparatus
    9.
    发明申请
    Near field analysis apparatus 有权
    近场分析仪

    公开(公告)号：US20060131493A1

    公开(公告)日：2006-06-22

    申请号：US11316402

    申请日：2005-12-22

    申请人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

    发明人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

    IPC分类号： H01J40/14

    CPC分类号： G01Q60/22

    摘要： A near field analysis apparatus comprising: an irradiation optical system comprising an irradiation-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating irradiation-side guide light onto an adjustment surface via the irradiation-side adjustable optical system; a light collecting optical system comprising a light-collection-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating light-collection-side guide light onto the adjustment surface via the light-collection-side adjustable optical system; an irradiation-side adjustment device for adjusting the position or angle of the irradiation-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match; and a light-collection-side adjustment device for adjusting the position or angle of the light-collection-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match.

    摘要翻译： 一种近场分析装置，包括：照射光学系统，包括用于调节其光轴的位置或角度的照射侧可调节光学系统，并且经由照射侧可调节光学系统将照射侧引导光照射到调整表面上 ; 光收集光学系统，包括用于调节其光轴的位置或角度的采光侧可调光学系统，以及经由采光侧可调节光学系统将光收集侧引导光照射到调节表面上 ; 照射侧调节装置，用于调节照射侧可调节光学系统的位置或角度，使得在调节表面观察到的引导光点相匹配; 以及采集侧调整装置，其用于调整所述收光侧可调光学系统的位置或角度，使得在所述调整面观察到的所述引导光的光斑匹配。

    Near-field microscope
    10.
    发明授权
    Near-field microscope 有权
    近场显微镜

    公开(公告)号：US06710331B2

    公开(公告)日：2004-03-23

    申请号：US09986012

    申请日：2001-11-07

    申请人： Yoshihito Narita ,  Shigeyuki Kimura

    发明人： Yoshihito Narita ,  Shigeyuki Kimura

    IPC分类号： H01J314

    CPC分类号： G01Q60/22 ,  G01Q10/06 ,  G01Q30/06 ,  Y10S977/862

    摘要： A near-field microscope comprising: a probe for scattering a near-field light; light emitting device including a light source for emitting light to a sample or said probe; and light sampling device for sampling and detecting a light that includes information of the sample scattered by said probe, said microscope comprising: control device for spacing said sample or probe from a field of a near-field light generated by said light emission or disposing the sample or probe at a position that is shallow in a field of near-field light, thereby detecting a noise by said light sampling device; inserting said sample or probe deeply into a field of near-field light generated by said light emission, thereby detecting light intensity by said light sampling device; and computing device for computing a measurement result obtained by subtracting a noise from said light intensity.

    摘要翻译： 一种近场显微镜，包括：用于散射近场光的探针; 发光器件包括用于向样品或所述探针发射光的光源; 以及用于采样和检测包括由所述探针散射的样品的信息的光的光取样装置，所述显微镜包括：用于将所述样品或探针与由所述发光产生的近场光的场隔开的控制装置， 在近场光场中的浅的位置处的样品或探针，从而通过所述光采样装置检测噪声; 将所述样品或探针深深地插入由所述发光产生的近场光的场中，从而由所述光采样装置检测光强度; 以及用于计算通过从所述光强减去噪声而获得的测量结果的计算装置。