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    Preparation of metal oxide thin film via cyclic CVD or ALD
    4.
    发明授权
    Preparation of metal oxide thin film via cyclic CVD or ALD 有权
    通过循环CVD或ALD制备金属氧化物薄膜

    公开(公告)号：US08092870B2

    公开(公告)日：2012-01-10

    申请号：US12410529

    申请日：2009-03-25

    申请人： Moo-Sung Kim ,  Xinjian Lei ,  Daniel P. Spence ,  Sang-Hyun Yang

    发明人： Moo-Sung Kim ,  Xinjian Lei ,  Daniel P. Spence ,  Sang-Hyun Yang

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/409 ,  C23C16/45553

    摘要： A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.

    摘要翻译： 一种在衬底上形成金属氧化物膜的循环沉积工艺，其包括以下步骤：将金属酮亚胺引入淀积室并将金属酮嘧啶沉积在加热的衬底上; 清除沉积室以除去未反应的金属酮基甲酸酯和任何副产物; 将含氧源引入加热的基底; 清除沉积室以除去任何未反应的化学和副产物; 并重复循环沉积过程，直到建立所需的膜厚。

    Method for Preparing Metal Complexes of Polydentate Beta-Ketoiminates
    5.
    发明申请
    Method for Preparing Metal Complexes of Polydentate Beta-Ketoiminates 有权
    制备多齿β-酮基酮的金属络合物的方法

    公开(公告)号：US20110040124A1

    公开(公告)日：2011-02-17

    申请号：US12702655

    申请日：2010-02-09

    申请人： Xinjian Lei ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Daniel P. Spence

    IPC分类号： C07C249/02

    CPC分类号： C07C221/00 ,  C07C225/04

    摘要： A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: wherein M is a metal selected from the group consisting of Mg, Ca, Sr, and Ba; R1, R3, R5, and R6 are independently selected from an alkyl group, a fluoroalkyl group, a cycloaliphatic group, and an aryl group; R2 is selected from a hydrogen atom, an alkyl group, an alkoxy group, a cycloaliphatic group, and an aryl group; and R4 is an alkyenyl bridge, comprising: reacting M in a reaction mixture comprising a tridentate ketoimine ligand and an alcohol comprising at least one selected from the group consisting of R7OH and (OH)nR8 wherein R7 and R8 are independently selected from an alkyl group and an aryl group. In certain embodiments, the reaction mixture further comprises an organic solvent.

    摘要翻译： 一种由以下结构A表示的含2族金属的多金属和酮基的方法：其中M是选自Mg，Ca，Sr和Ba的金属; R 1，R 3，R 5和R 6独立地选自烷基，氟烷基，脂环族基和芳基; R2选自氢原子，烷基，烷氧基，脂环族基和芳基; 并且R 4是烷基桥，其包括：在包含三齿酮亚胺配体和包含选自由R7OH和（OH）nR8组成的组中的至少一种的醇的反应混合物中使M反应，其中R 7和R 8独立地选自烷基 和芳基。 在某些实施方案中，反应混合物还包含有机溶剂。

    Metal Precursor Solutions For Chemical Vapor Deposition
    6.
    发明申请
    Metal Precursor Solutions For Chemical Vapor Deposition 审中-公开
    用于化学气相沉积的金属前体溶液

    公开(公告)号：US20080254218A1

    公开(公告)日：2008-10-16

    申请号：US12058200

    申请日：2008-03-28

    申请人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    IPC分类号： C23C18/44

    CPC分类号： C23C16/18 ,  C23C16/16

    摘要： Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

    摘要翻译： 描述了用于在衬底上制造保形的含金属膜的用于化学气相沉积工艺的包含原子层沉积的前体液体溶液的金属源。 更具体地说，金属源前体液体溶液包括（i）至少一种选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺，烷基金属，金属羰基，烷基金属羰基，芳基金属，芳基金属羰基 ，环戊二烯基金属，环戊二烯基金属异腈，环戊二烯基金属腈，环戊二烯基金属羰基，金属醇盐，金属醚醇盐和金属酰胺，其中配体可以是单齿，双齿和多齿配位的金属原子，金属选自组2 14元素，和（ii）选自有机酰胺的溶剂，包括用于这种含金属源的前体的线性酰胺和环状酰胺。

    Group 4 metal precursors for metal-containing films
    7.
    发明授权
    Group 4 metal precursors for metal-containing films 有权
    用于含金属膜的第4族金属前体

    公开(公告)号：US08952188B2

    公开(公告)日：2015-02-10

    申请号：US12904421

    申请日：2010-10-14

    申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

    发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455

    CPC分类号： C23C16/18 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

    摘要： The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译： 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。

    Metal complexes for metal-containing film deposition
    8.
    发明授权
    Metal complexes for metal-containing film deposition 有权
    含金属膜沉积的金属络合物

    公开(公告)号：US08617305B2

    公开(公告)日：2013-12-31

    申请号：US13348228

    申请日：2012-01-11

    申请人： Xinjian Lei ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Daniel P. Spence

    IPC分类号： C07F5/00 ,  C09D1/00 ,  C23C16/06 ,  C23C16/40 ,  C23C16/513 ,  C07C251/04 ,  C07C211/00 ,  C07F15/00 ,  C07F7/00 ,  C07F7/28

    CPC分类号： C07F5/00 ,  C07F5/003

    摘要： Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.

    摘要翻译： 三价金属络合物的新族，包括钪，钇，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium，镱，镥，矾，镓，铟，锰，锑 ，铋 以及包括镁，钙，锶，钡，锰，钴，铁，镍，钌，铜，锌，镉的二价金属络合物。 这些金属络合物可用作在半导体工业中沉积金属或金属氧化物膜的前体。

    Liquid precursor for depositing group 4 metal containing films
    9.
    发明授权
    Liquid precursor for depositing group 4 metal containing films 有权
    用于沉积第4组含金属膜的液体前体

    公开(公告)号：US08592606B2

    公开(公告)日：2013-11-26

    申请号：US12950352

    申请日：2010-11-19

    申请人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    IPC分类号： C07F7/00 ,  C07F7/28 ,  C23C16/00

    CPC分类号： C07F17/00 ,  C07F7/003

    摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

    摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R4选自C1-6烷基，优选在2,5位取代的支链C3-5烷基，以防止以eta1方式与金属中心配位的吡咯啉; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。

    Materials for adhesion enhancement of copper film on diffusion barriers
    10.
    发明授权
    Materials for adhesion enhancement of copper film on diffusion barriers 失效
    扩散壁上铜膜粘附增强的材料

    公开(公告)号：US07919409B2

    公开(公告)日：2011-04-05

    申请号：US12192603

    申请日：2008-08-15

    申请人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    发明人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    IPC分类号： H01L21/285

    CPC分类号： H01L21/76846

    摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

    摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。