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公开(公告)号：US08092870B2
公开(公告)日：2012-01-10
申请号：US12410529
申请日：2009-03-25
申请人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
发明人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
CPC分类号： C23C16/409 , C23C16/45553
摘要： A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.
摘要翻译： 一种在衬底上形成金属氧化物膜的循环沉积工艺，其包括以下步骤：将金属酮亚胺引入淀积室并将金属酮嘧啶沉积在加热的衬底上; 清除沉积室以除去未反应的金属酮基甲酸酯和任何副产物; 将含氧源引入加热的基底; 清除沉积室以除去任何未反应的化学和副产物; 并重复循环沉积过程，直到建立所需的膜厚。
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公开(公告)号：US20100075067A1
公开(公告)日：2010-03-25
申请号：US12410529
申请日：2009-03-25
申请人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
发明人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
CPC分类号： C23C16/409 , C23C16/45553
摘要： A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.
摘要翻译： 一种在衬底上形成金属氧化物膜的循环沉积工艺，其包括以下步骤：将金属酮亚胺引入淀积室并将金属酮嘧啶沉积在加热的衬底上; 清除沉积室以除去未反应的金属酮基甲酸酯和任何副产物; 将含氧源引入加热的基底; 清除沉积室以除去任何未反应的化学和副产物; 并重复循环沉积过程，直到建立所需的膜厚。
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公开(公告)号：US20110250126A1
公开(公告)日：2011-10-13
申请号：US12904421
申请日：2010-10-14
IPC分类号： C07F7/00 , C01G23/047 , C07F7/28
CPC分类号： C23C16/18 , C07F7/003 , C23C16/405 , C23C16/45553 , Y02P20/582
摘要： The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.
摘要翻译： 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。
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公开(公告)号：US20110256314A1
公开(公告)日：2011-10-20
申请号：US12904461
申请日：2010-10-14
IPC分类号： C23C16/18
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： A method for forming metal-containing films by atomic layer deposition using precursors of the formula: M(OR1)(OR2)(R3C(O)C(R4)C(O)XR5y)2 wherein M is Group 4 metals; wherein R1 and R2 can be same or different selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl; R3 can be selected from the group consisting of linear or branched C1-10 alkyls, preferably C1-3 alkyls and a C6-12 aryl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen; R5 is selected from the group consisting of C1-10 linear or branched alkyls, and a C6-12 aryl, preferably a methyl or ethyl group; X═O or N wherein when X═O, y=1 and R1, 2 and 5 are the same, when X═N, y=2 and each R5 can be the same or different.
摘要翻译： 使用下式的M（OR1）（OR2）（R3C（O）C（R4）C（O）XR5y）2的前体通过原子层沉积形成含金属膜的方法，其中M是第4族金属; 其中R1和R2可以相同或不同，选自直链或支链C 1-10烷基和C 6-12芳基; R 3可以选自直链或支链C 1-10烷基，优选C 1-3烷基和C 6-12芳基; R 4选自氢，C 1-10烷基和C 6-12芳基，优选氢; R5选自C1-10直链或支链烷基，和C6-12芳基，优选甲基或乙基; X = O或N，其中当X = O，y = 1且R 1，2和5相同时，当X = N，y = 2，并且每个R 5可以相同或不同时。
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公开(公告)号：US20100143607A1
公开(公告)日：2010-06-10
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。
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公开(公告)号：US08952188B2
公开(公告)日：2015-02-10
申请号：US12904421
申请日：2010-10-14
IPC分类号： C23C16/18 , C23C16/40 , C23C16/455
CPC分类号： C23C16/18 , C07F7/003 , C23C16/405 , C23C16/45553 , Y02P20/582
摘要： The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.
摘要翻译： 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。
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公开(公告)号：US08471049B2
公开(公告)日：2013-06-25
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。
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8.发明申请公开(公告)号：US20080318443A1
公开(公告)日：2008-12-25
申请号：US12157631
申请日：2008-06-12
申请人： Min-Kyung Kim , Yang-Suk Han , Moo-Sung Kim , Sang-Hyun Yang , Xinjian Lei
发明人： Min-Kyung Kim , Yang-Suk Han , Moo-Sung Kim , Sang-Hyun Yang , Xinjian Lei
IPC分类号： H01L21/285 , C23C16/34
CPC分类号： C23C16/34 , C23C16/45531 , C23C16/45542 , C23C16/45553
摘要： The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas.
摘要翻译： 本发明涉及一种在金属酰胺，硅前体和氮源气体作为前体的等离子体气氛下，根据循环膜沉积形成金属氮化硅膜的方法。 用于在衬底上形成金属氮化硅膜的沉积方法包括以下步骤：脉冲金属酰胺前体; 清除未反应的金属酰胺; 在等离子体气氛下将氮源气体引入反应室; 清除未反应的氮源气体; 脉冲硅前体; 清除未反应的硅前体; 在等离子体气氛下将氮源气体引入反应室; 并清除未反应的氮源气体。
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公开(公告)号：US20090130414A1
公开(公告)日：2009-05-21
申请号：US12255128
申请日：2008-10-21
申请人： Min-Kyung Kim , Moo-Sung Kim , Xinjian Lei , Sang-Hyun Yang , Yang-Suk Han
发明人： Min-Kyung Kim , Moo-Sung Kim , Xinjian Lei , Sang-Hyun Yang , Yang-Suk Han
CPC分类号： C23C16/40 , C23C16/401 , C23C16/45527 , C23C16/45531 , Y10T428/31663
摘要： Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.
摘要翻译： 本文描述了通过化学气相沉积或含金属膜的原子层沉积的沉积方法，例如金属硅酸盐或金属氮氧化硅膜。 在一个实施方案中，沉积含金属膜的方法包括以下步骤：向引入吹扫气体的反应室中引入金属酰胺前体，含硅前体和氧源，其中每个前体被引入。
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公开(公告)号：US08592058B2
公开(公告)日：2013-11-26
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
IPC分类号： B32B9/00 , B32B19/00 , H01L27/108
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。
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