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    Planarization method for high wafer topography
    1.
    发明授权
    Planarization method for high wafer topography 有权
    高晶圆地形平面化方法

    公开(公告)号：US08409456B2

    公开(公告)日：2013-04-02

    申请号：US13090763

    申请日：2011-04-20

    申请人： Shun-Wei Lan ,  Jieh-Jang Chen ,  Shih-Wei Lin ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    发明人： Shun-Wei Lan ,  Jieh-Jang Chen ,  Shih-Wei Lin ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31058 ,  H01L21/31138

    摘要： A method for planarizing a semiconductor device includes providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion; coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening; etching back the light sensitive material layer to expose the upper portion of the at least one opening; repeating the steps of coating and etching to remove a predetermined amount below the upper portion of the at least one opening; depositing an insulating layer over the substrate; and planarizing the insulating layer until the upper portion of the at least one opening is exposed.

    摘要翻译： 一种用于平面化半导体器件的方法包括提供其中具有至少一个开口的衬底，每个开口限定下部和上部; 在所述基板上涂覆感光材料层，所述光敏材料层覆盖所述至少一个开口的下部和上部; 蚀刻光敏材料层以暴露至少一个开口的上部; 重复涂覆和蚀刻步骤以除去至少一个开口的上部下方的预定量; 在衬底上沉积绝缘层; 并且平坦化绝缘层，直到暴露至少一个开口的上部。

    Methods of forming semiconductor structures
    2.
    发明授权
    Methods of forming semiconductor structures 有权
    形成半导体结构的方法

    公开(公告)号：US08466070B2

    公开(公告)日：2013-06-18

    申请号：US13151806

    申请日：2011-06-02

    申请人： Hsing-Fei Chou ,  Chia-Hua Chu ,  Jieh-Jang Chen ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    发明人： Hsing-Fei Chou ,  Chia-Hua Chu ,  Jieh-Jang Chen ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    IPC分类号： H01L21/311

    CPC分类号： B81C1/00063

    摘要： A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.

    摘要翻译： 形成半导体结构的方法包括在衬底中形成开口。 形成介电层并基本上与开口保持一致。 在开口内形成牺牲结构，覆盖电介质层的一部分。 通过使用牺牲结构作为蚀刻掩模层来去除介电层的一部分。 牺牲结构被去除。

    Lens structures suitable for use in image sensors and method for making the same
    4.
    发明授权
    Lens structures suitable for use in image sensors and method for making the same 有权
    适用于图像传感器的镜头结构及其制作方法

    公开(公告)号：US07443005B2

    公开(公告)日：2008-10-28

    申请号：US10982978

    申请日：2004-11-05

    申请人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Hsien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

    发明人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Hsien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

    IPC分类号： H01L29/78

    CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

    摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.

    摘要翻译： 图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。 内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。 内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。 可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。 热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。 感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

    Methods to improve photonic performances of photo-sensitive integrated circuits
    5.
    发明授权
    Methods to improve photonic performances of photo-sensitive integrated circuits 有权
    提高光敏集成电路光子性能的方法

    公开(公告)号：US07189957B2

    公开(公告)日：2007-03-13

    申请号：US10906604

    申请日：2005-02-25

    申请人： Shih-Chi Fu ,  Yuan-Hung Liu ,  Kuo-Yin Lin ,  Feng-Jia Shiu ,  Chia-Shiung Tsai ,  Ching-Sen Kuo ,  Jieh-Jang Chen

    发明人： Shih-Chi Fu ,  Yuan-Hung Liu ,  Kuo-Yin Lin ,  Feng-Jia Shiu ,  Chia-Shiung Tsai ,  Ching-Sen Kuo ,  Jieh-Jang Chen

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14654

    摘要： Described is a light-directing feature formed in the inter-level dielectric (ILD) layer in combination with an anti-reflective (AR) layer to effectively and simultaneously increase quantum efficiency and cross-talk immunity thereby improving photonic performances of photo-sensitive integrated circuits. A plurality of photosensor cells is formed on a semiconductor substrate. An AR layer is subsequently formed on the plurality of photosensor cells, the AR layer being substantially non-reflective of incident light. An ILD layer is then formed over the AR layer, the ILD layer comprising a plurality of light-directing features formed in openings in the ILD layer over the AR layer above and about certain of the plurality of photosensor cells.

    摘要翻译： 描述了在层间电介质（ILD）层中形成的与抗反射（AR）层组合的光导特征，以有效并同时地提高量子效率和串扰抗扰度，从而改善光敏集成的光子性能 电路。 多个光电传感器单元形成在半导体基板上。 随后在多个光电传感器单元上​​形成AR层，AR层基本上不反射入射光。 然后在AR层上形成ILD层，ILD层包括多个导光特征，其形成在ILD层中的多个光敏元件上方和周围的AR层上的开口中。

    Methods to Improve Photonic Performances of Photo-Sensitive Integrated Circuits
    6.
    发明申请
    Methods to Improve Photonic Performances of Photo-Sensitive Integrated Circuits 有权
    提高光敏集成电路光子性能的方法

    公开(公告)号：US20060192083A1

    公开(公告)日：2006-08-31

    申请号：US10906604

    申请日：2005-02-25

    申请人： Shih-Chi Fu ,  Yuan-Hung Liu ,  Kuo-Yin Lin ,  Feng-Jia Shiu ,  Chia-Shiung Tsai ,  Ching-Sen Kuo ,  Jieh-Jang Chen

    发明人： Shih-Chi Fu ,  Yuan-Hung Liu ,  Kuo-Yin Lin ,  Feng-Jia Shiu ,  Chia-Shiung Tsai ,  Ching-Sen Kuo ,  Jieh-Jang Chen

    IPC分类号： H01L27/00 ,  H01L31/00

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14654

    摘要： Described is a light-directing feature formed in the inter-level dielectric (ILD) layer in combination with an anti-reflective (AR) layer to effectively and simultaneously increase quantum efficiency and cross-talk immunity thereby improving photonic performances of photo-sensitive integrated circuits. A plurality of photosensor cells is formed on a semiconductor substrate. An AR layer is subsequently formed on the plurality of photosensor cells, the AR layer being substantially non-reflective of incident light. An ILD layer is then formed over the AR layer, the ILD layer comprising a plurality of light-directing features formed in openings in the ILD layer over the AR layer above and about certain of the plurality of photosensor cells.

    摘要翻译： 描述了在层间电介质（ILD）层中形成的与抗反射（AR）层组合的光导特征，以有效并同时地提高量子效率和串扰抗扰度，从而改善光敏集成的光子性能 电路。 多个光电传感器单元形成在半导体基板上。 随后在多个光电传感器单元上​​形成AR层，AR层基本上不反射入射光。 然后在AR层上形成ILD层，ILD层包括多个导光特征，其形成在ILD层中的多个光敏元件上方和周围的AR层上的开口中。

    Method of fabricating backside illuminated image sensor
    9.
    发明授权
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US07648851B2

    公开(公告)日：2010-01-19

    申请号：US11369054

    申请日：2006-03-06

    申请人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.

    摘要翻译： 制造背面照明图像传感器的方法包括提供具有前表面和后表面的半导体衬底，在衬底的前表面上提供多个晶体管，金属互连和金属焊盘，将支撑层粘合到前面 基板的表面，从背面减薄半导体基板，通过从后表面进行配准，从覆盖微细对准标记的背面清除半导体基板的区域，并使用全局对准标记作为 通过从后表面进行配准并使用精细对准标记作为参考来处理衬底的背面。