公开(公告)号：US10458038B2

公开(公告)日：2019-10-29

申请号：US14929015

申请日：2015-10-30

申请人： Yale University

发明人： Yu Zhang ,  Qian Sun ,  Jung Han

IPC分类号： H01L33/00 ,  C25F3/12 ,  C30B29/40 ,  C30B33/10 ,  H01L21/02 ,  H01L21/306 ,  H01L33/16 ,  C25B1/00 ,  H01L21/3063 ,  H01L33/32 ,  C25B1/04 ,  C30B23/02 ,  C30B25/18 ,  G02B5/18 ,  G02B6/293 ,  H01L21/326 ,  G02B1/02 ,  G02B1/118 ,  H01L21/78

摘要： This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

公开(公告)号：US20160153113A1

公开(公告)日：2016-06-02

申请号：US14929015

申请日：2015-10-30

申请人： Yale University

发明人： Yu Zhang ,  Qian Sun ,  Jung Han

IPC分类号： C25F3/12 ,  C25B1/04 ,  G02B6/293 ,  G02B5/18 ,  H01L21/02 ,  C30B23/02 ,  H01L21/306 ,  H01L33/00 ,  H01L33/32 ,  C30B33/10 ,  C30B29/40 ,  C30B25/18 ,  C25B1/00 ,  H01L21/326

CPC分类号： C25F3/12 ,  C25B1/003 ,  C25B1/04 ,  C30B23/025 ,  C30B25/186 ,  C30B29/406 ,  C30B33/10 ,  G02B1/02 ,  G02B1/118 ,  G02B5/1861 ,  G02B6/29356 ,  G02B6/29358 ,  G02B2207/107 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/30635 ,  H01L21/326 ,  H01L21/7813 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  Y02E60/366 ,  Y10T428/24997

摘要： This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

摘要翻译： 本发明涉及跨越具有受控孔径，孔密度和孔隙率的大面积（> 1cm 2）生成NP氮化镓（GaN）的方法。 还公开了产生基于多孔GaN的新型光电子器件的方法。 此外，公开了分离和产生独立的结晶GaN薄层的层转移方案，其能够实现涉及衬底回收的新器件制造范例。 本发明的其它公开的实施例涉及GaN基纳米晶体的制造和用于电解，水分解或光合过程应用的NP GaN电极的使用。