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    ABRASIVE COMPOSITION FOR ELECTROCHEMICAL MECHANICAL POLISHING
    1.
    发明申请
    ABRASIVE COMPOSITION FOR ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
    电化学机械抛光磨料组合物

    公开(公告)号：US20070254485A1

    公开(公告)日：2007-11-01

    申请号：US11735801

    申请日：2007-04-16

    申请人： Daxin Mao ,  You Wang ,  Junzi Zhao ,  Stan D. Tsai ,  Renhe Jia ,  Jie Diao ,  Yongqi Hu ,  Lakshmanan Karuppiah

    发明人： Daxin Mao ,  You Wang ,  Junzi Zhao ,  Stan D. Tsai ,  Renhe Jia ,  Jie Diao ,  Yongqi Hu ,  Lakshmanan Karuppiah

    IPC分类号： H01L21/461 ,  H01L21/302 ,  C09K13/00

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C25F3/02 ,  H01L21/7684

    摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

    摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在某些实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其中所述组合物包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，一定量的pH调节剂， 提供约3至约10个的阴离子聚合物研磨剂颗粒和溶剂之间的pH。 该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

    Process for high copper removal rate with good planarization and surface finish
    2.
    发明申请
    Process for high copper removal rate with good planarization and surface finish 审中-公开
    具有良好的平坦化和表面光洁度的高铜去除率的工艺

    公开(公告)号：US20070235344A1

    公开(公告)日：2007-10-11

    申请号：US11399560

    申请日：2006-04-06

    申请人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    发明人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    IPC分类号： B23H5/08

    CPC分类号： B23H5/08 ,  C25F3/02 ,  H01L21/32125

    摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.

    摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。

    Process and composition for conductive material removal by electrochemical mechanical polishing
    3.
    发明授权
    Process and composition for conductive material removal by electrochemical mechanical polishing 失效
    通过电化学机械抛光去除导电材料的工艺和组成

    公开(公告)号：US07582564B2

    公开(公告)日：2009-09-01

    申请号：US11123274

    申请日：2005-05-05

    申请人： Zhihong Wang ,  You Wang ,  Daxin Mao ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu ,  Yuan A. Tian ,  Liang-Yuh Chen

    发明人： Zhihong Wang ,  You Wang ,  Daxin Mao ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu ,  Yuan A. Tian ,  Liang-Yuh Chen

    IPC分类号： H01L21/302

    CPC分类号： C25F3/02 ,  B23H5/08 ,  C09G1/02 ,  H01L21/32125 ,  H01L21/7684

    摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

    摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

    Method and apparatus for reduced wear polishing pad conditioning
    4.
    发明授权
    Method and apparatus for reduced wear polishing pad conditioning 失效
    降低磨损抛光垫调理的方法和装置

    公开(公告)号：US07210988B2

    公开(公告)日：2007-05-01

    申请号：US11209167

    申请日：2005-08-22

    申请人： Yan Wang ,  Stan D. Tsai ,  Yongqi Hu ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Karen Tran ,  Martin S. Wohlert ,  Renhe Jia ,  Yuan A. Tian

    发明人： Yan Wang ,  Stan D. Tsai ,  Yongqi Hu ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Karen Tran ,  Martin S. Wohlert ,  Renhe Jia ,  Yuan A. Tian

    IPC分类号： B24B53/00

    CPC分类号： B24B53/017 ,  B23H5/08

    摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

    摘要翻译： 提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。 在一个实施例中，调节头包括设置在中心腔中的刷子。 清洁流体通过调节头的中心空腔设置到处理垫。 刷子旋转并横向移动到处理垫的表面上。 通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻擦拭处理垫。 调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。 清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

    Method for electrochemically mechanically polishing a conductive material on a substrate
    6.
    发明授权
    Method for electrochemically mechanically polishing a conductive material on a substrate 失效
    在基板上进行电化学机械研磨导电材料的方法

    公开(公告)号：US07576007B2

    公开(公告)日：2009-08-18

    申请号：US11328958

    申请日：2006-01-09

    申请人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu

    发明人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/7684 ,  B23H5/08 ,  H01L21/32125

    摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

    摘要翻译： 本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。 例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性 当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

    Method and apparatus for reduced wear polishing pad conditioning
    8.
    发明申请
    Method and apparatus for reduced wear polishing pad conditioning 失效
    降低磨损抛光垫调理的方法和装置

    公开(公告)号：US20060046623A1

    公开(公告)日：2006-03-02

    申请号：US11209167

    申请日：2005-08-22

    申请人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    发明人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    IPC分类号： B24B1/00

    CPC分类号： B24B53/017 ,  B23H5/08

    摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

    摘要翻译： 提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。 在一个实施例中，调节头包括设置在中心腔中的刷子。 清洁流体通过调节头的中心空腔设置到处理垫。 刷子旋转并横向移动到处理垫的表面上。 通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻地擦拭处理垫。 调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。 清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

    TEMPERATURE CONTROL FOR ECMP PROCESS
    9.
    发明申请
    TEMPERATURE CONTROL FOR ECMP PROCESS 审中-公开
    ECMP过程温度控制

    公开(公告)号：US20090036032A1

    公开(公告)日：2009-02-05

    申请号：US12248414

    申请日：2008-10-09

    申请人： Yongqi Hu ,  Paul D. Butterfield ,  Junzi Zhao ,  Stan D. Tsai ,  Feng Q. Liu

    发明人： Yongqi Hu ,  Paul D. Butterfield ,  Junzi Zhao ,  Stan D. Tsai ,  Feng Q. Liu

    IPC分类号： B24B1/00

    CPC分类号： B23H5/08 ,  B24B37/015 ,  B24B37/046 ,  B24B37/12 ,  B24B49/14 ,  C25D7/00

    摘要： Methods for polishing a substrate are provided. In one embodiment, the method includes pressing a substrate against a pad assembly disposed on rotating platen assembly, the pad assembly comprising an electrode coupled to a power source, flowing an electrolyte fluid onto the pad assembly, wherein the electrolyte fluid is in contact with the substrate and the electrode, creating an electrical bias between the electrode and the substrate, and heating the electrolyte fluid with an infrared lamp to a temperature of at least 10 degrees Celsius above room temperature.

    摘要翻译： 提供了抛光基板的方法。 在一个实施例中，该方法包括将基板压靠在设置在旋转台板组件上的焊盘组件上，该焊盘组件包括耦合到电源的电极，将电解液流动到焊盘组件上，其中电解质流体与 衬底和电极，在电极和衬底之间产生电偏压，并用红外灯将电解质液体加热到高于室温的至少10摄氏度的温度。

    Method for electrochemically mechanically polishing a conductive material on a substrate
    10.
    发明申请
    Method for electrochemically mechanically polishing a conductive material on a substrate 失效
    在基板上进行电化学机械研磨导电材料的方法

    公开(公告)号：US20070161250A1

    公开(公告)日：2007-07-12

    申请号：US11328958

    申请日：2006-01-09

    申请人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

    发明人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/7684 ,  B23H5/08 ,  H01L21/32125

    摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

    摘要翻译： 本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。 例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性 当抛光工位移动基板时，可能在抛光过程结束时发生电弧。