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    SUBSTRATE TREATING APPARATUS
    2.
    发明申请
    SUBSTRATE TREATING APPARATUS 审中-公开
    基板处理装置

    公开(公告)号：US20090165720A1

    公开(公告)日：2009-07-02

    申请号：US12397088

    申请日：2009-03-03

    申请人： Yasuhiko KOJIMA ,  Tadahiro Ishizaka ,  Yumiko Kawano

    发明人： Yasuhiko KOJIMA ,  Tadahiro Ishizaka ,  Yumiko Kawano

    IPC分类号： C23C16/54

    CPC分类号： C23C16/4409 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67109 ,  H01L21/67126

    摘要： A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.

    摘要翻译： 一种基板处理装置，包括：用于容纳基板的处理室;基板被放置在处理室内的阶段;布置在所述台内并用于加热所述基板的加热构件;布置在所述台与处理之间的密封构件 以及具有冷却介质的冷却机构，其利用蒸发潜热来冷却密封部件。

    Processing apparatus and processing method
    4.
    发明申请
    Processing apparatus and processing method 审中-公开
    处理装置及处理方法

    公开(公告)号：US20060154383A1

    公开(公告)日：2006-07-13

    申请号：US10526019

    申请日：2003-08-15

    申请人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    发明人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45557

    摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

    摘要翻译： 在处理装置中，提供包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的工艺气体 进入处理室（2）。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。

    A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER
    8.
    发明申请
    A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER 审中-公开
    用于处理位于过程室中的放置阶段的基板的处理方法

    公开(公告)号：US20090214758A1

    公开(公告)日：2009-08-27

    申请号：US12421271

    申请日：2009-04-09

    申请人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    发明人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    IPC分类号： C23C16/52

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45557

    摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

    摘要翻译： 在处理装置中，将包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的处理气体供给到处理室（2）中。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。

    Processing device and processing method
    9.
    发明申请
    Processing device and processing method 审中-公开
    处理装置及处理方法

    公开(公告)号：US20060096531A1

    公开(公告)日：2006-05-11

    申请号：US10516311

    申请日：2003-06-09

    申请人： Tadahiro Ishizaka ,  Isao Gunji ,  Hiroshi Kannan ,  Ikuo Sawada ,  Yasuhiko Kojima

    发明人： Tadahiro Ishizaka ,  Isao Gunji ,  Hiroshi Kannan ,  Ikuo Sawada ,  Yasuhiko Kojima

    IPC分类号： C23C16/00

    CPC分类号： C23C16/455

    摘要： A chamber having an approximately triangular transverse cross section is provided with a gas supply opening at its one side, and is provided with an exhaust opening at a vertex facing the one side. Further, the gas supply opening is provided with a showerhead-like gas supply section. Based on this configuration, the chamber is structured such that a cross-sectional area of a gas flow passage formed from the gas supply opening to the exhaust opening gradually decreases toward a direction of gas supply. At this time, a thickness of a boundary layer formed on a wall of the chamber becomes substantially constant.

    摘要翻译： 具有近似三角形横截面的腔室在其一侧设置有气体供给开口，并且在面向一侧的顶点处设置有排气口。 此外，气体供给开口设置有喷头状气体供给部。 基于该构造，室被构造为使得从气体供给开口到排气口形成的气体流路的截面积朝向气体供给方向逐渐减小。 此时，形成在室的壁上的边界层的厚度变得基本恒定。

    Thin-film formation in semiconductor device fabrication process and film deposition apparatus
    10.
    发明申请
    Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
    半导体器件制造工艺中的薄膜形成和成膜装置

    公开(公告)号：US20060068104A1

    公开(公告)日：2006-03-30

    申请号：US11231962

    申请日：2005-09-22

    申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

    发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

    摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

    摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。