利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

84 条记录 (耗时 0.035 秒)

    Thin-film formation in semiconductor device fabrication process and film deposition apparatus
    3.
    发明申请
    Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
    半导体器件制造工艺中的薄膜形成和成膜装置

    公开(公告)号：US20060068104A1

    公开(公告)日：2006-03-30

    申请号：US11231962

    申请日：2005-09-22

    申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

    发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

    摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

    摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

    Processing method
    4.
    发明申请
    Processing method 审中-公开
    加工方法

    公开(公告)号：US20070160757A1

    公开(公告)日：2007-07-12

    申请号：US11717183

    申请日：2007-03-13

    申请人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

    发明人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4412

    摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

    摘要翻译： 在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。 供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。 此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。 当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。 通过设置在供给系统和排气系统中的每一个的截止阀进行切换。

    A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER
    6.
    发明申请
    A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER 审中-公开
    用于处理位于过程室中的放置阶段的基板的处理方法

    公开(公告)号：US20090214758A1

    公开(公告)日：2009-08-27

    申请号：US12421271

    申请日：2009-04-09

    申请人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    发明人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    IPC分类号： C23C16/52

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45557

    摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

    摘要翻译： 在处理装置中，将包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的处理气体供给到处理室（2）中。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。

    Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium
    7.
    发明申请
    Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium 审中-公开
    形成薄膜，薄膜成型装置，程序和计算机可读信息记录介质的方法

    公开(公告)号：US20080241385A1

    公开(公告)日：2008-10-02

    申请号：US10547784

    申请日：2004-02-26

    申请人： Yasuhiro Oshima ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Hiroshi Kannan ,  Tadahiro Ishizaka

    发明人： Yasuhiro Oshima ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Hiroshi Kannan ,  Tadahiro Ishizaka

    IPC分类号： C23C16/08 ,  C23C16/44

    CPC分类号： C23C16/45523 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843

    摘要： A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).

    摘要翻译： 通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。 特别是，形成TiN薄膜的方法，包括重复操作，包括使TiCl 4气体作为原料气体吸附在吸附在基底上的TiCl 4分子上 底物并在处理室中加入作为反应气体的NH 3气体，以使TiCl 4和NH 3反应形成，形成 的TiN膜，该方法还包括在衬底上吸附TiCl 4气体之前，在处理室（30）中进料还原H 2气体 ），以便将TiCl 4改变为增加在衬底上的吸附可能性（例如TiCl 3 3）的状态。

    Processing apparatus and processing method
    8.
    发明申请
    Processing apparatus and processing method 审中-公开
    处理装置及处理方法

    公开(公告)号：US20060154383A1

    公开(公告)日：2006-07-13

    申请号：US10526019

    申请日：2003-08-15

    申请人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    发明人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45557

    摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

    摘要翻译： 在处理装置中，提供包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的工艺气体 进入处理室（2）。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。