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公开(公告)号：US20050211167A1
公开(公告)日：2005-09-29
申请号：US10517345
申请日：2003-06-09
申请人： Isao Gunji , Tadahiro Ishizaka , Hiroshi Kannan , Ikuo Sawada , Yasuhiko Kojima
发明人： Isao Gunji , Tadahiro Ishizaka , Hiroshi Kannan , Ikuo Sawada , Yasuhiko Kojima
IPC分类号： C23C16/44 , C30B25/14 , H01L21/285 , C23C16/00
CPC分类号： C30B25/14 , C23C16/44 , H01L21/28562
摘要： The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater than 90 degrees with ceiling surface (12b). Further, the side surface of a susceptor (16) is formed such that it forms an angle greater than 90 degrees with a mounting surface for a wafer (W) and is substantially parallel with the second side wall (12d) of the chamber (12). Further, the susceptor (16) is disposed such that the distance (L2) between its side surface and the second side wall (12d) is greater than the distance (L1) between the shower head (20) and the wafer (W).
摘要翻译： 室（12）的顶表面（12b）基本上完全由气体供给口（19）形成。 此外，气体供给口（19）具有嵌入其中的喷头（20）。 天花板表面（12b）的周缘连接有形成与天花板表面（12b）大于90度的角度的第二侧壁（12d）。 此外，基座（16）的侧表面形成为与晶片（W）的安装表面形成大于90度的角度并且基本上平行于腔室的第二侧壁（12d） 12）。 此外，基座（16）设置成使得其侧表面和第二侧壁（12d）之间的距离（L 2）大于喷头（20）和晶片（20）之间的距离（L 1） W）。
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公开(公告)号：US20060096531A1
公开(公告)日：2006-05-11
申请号：US10516311
申请日：2003-06-09
申请人： Tadahiro Ishizaka , Isao Gunji , Hiroshi Kannan , Ikuo Sawada , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Isao Gunji , Hiroshi Kannan , Ikuo Sawada , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/455
摘要： A chamber having an approximately triangular transverse cross section is provided with a gas supply opening at its one side, and is provided with an exhaust opening at a vertex facing the one side. Further, the gas supply opening is provided with a showerhead-like gas supply section. Based on this configuration, the chamber is structured such that a cross-sectional area of a gas flow passage formed from the gas supply opening to the exhaust opening gradually decreases toward a direction of gas supply. At this time, a thickness of a boundary layer formed on a wall of the chamber becomes substantially constant.
摘要翻译： 具有近似三角形横截面的腔室在其一侧设置有气体供给开口，并且在面向一侧的顶点处设置有排气口。 此外，气体供给开口设置有喷头状气体供给部。 基于该构造，室被构造为使得从气体供给开口到排气口形成的气体流路的截面积朝向气体供给方向逐渐减小。 此时，形成在室的壁上的边界层的厚度变得基本恒定。
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3.发明申请Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium 审中-公开形成薄膜，薄膜成型装置，程序和计算机可读信息记录介质的方法公开(公告)号：US20080241385A1
公开(公告)日：2008-10-02
申请号：US10547784
申请日：2004-02-26
CPC分类号： C23C16/45523 , C23C16/34 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843
摘要： A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).
摘要翻译： 通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。 特别是，形成TiN薄膜的方法，包括重复操作，包括使TiCl 4气体作为原料气体吸附在吸附在基底上的TiCl 4分子上 底物并在处理室中加入作为反应气体的NH 3气体，以使TiCl 4和NH 3反应形成，形成 的TiN膜，该方法还包括在衬底上吸附TiCl 4气体之前，在处理室（30）中进料还原H 2气体 ），以便将TiCl 4改变为增加在衬底上的吸附可能性（例如TiCl 3 3）的状态。
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公开(公告)号：US20070160757A1
公开(公告)日：2007-07-12
申请号：US11717183
申请日：2007-03-13
申请人： Tadahiro Ishizaka , Hiroshi Kannan , Yasuhiko Kojima , Takashi Shigeoka , Yasuhiro Oshima , Kohei Kawamura
发明人： Tadahiro Ishizaka , Hiroshi Kannan , Yasuhiko Kojima , Takashi Shigeoka , Yasuhiro Oshima , Kohei Kawamura
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/4401 , C23C16/4412
摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.
摘要翻译： 在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。 供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。 此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。 当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。 通过设置在供给系统和排气系统中的每一个的截止阀进行切换。
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公开(公告)号：US06991684B2
公开(公告)日：2006-01-31
申请号：US10381724
申请日：2001-09-28
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45527 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/466 , H01L21/28562 , H01L21/67109 , Y10T29/41
摘要： A heater plate, which has a wafer W mounted thereon and which includes a heater in its interior, is placed on a cooling block including a coolant chamber in its interior. The cooling block includes a gas introduction pipe passing therethrough. The gas introduction pipe is connected to a space between the heater plate and the cooling block to make it possible to supply He gas as thermal conduction gas to the space. A gas suction pipe 34 is connected to the space to make it possible to suck He gas.
摘要翻译： 安装有晶片W并且在其内部包括加热器的加热器板被放置在包括其内部的冷却剂室的冷却块上。 冷却块包括通过其中的气体导入管。 气体导入管与加热板和冷却块之间的空间连接，能够将He气体作为导热气体供给到空间。 气体吸入管34连接到该空间，以便可以吸入He气体。
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6.发明授权Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing 失效衬底处理单元，检测衬底处理单元的清洁终点的方法以及检测衬底处理终点的方法公开(公告)号：US08075698B2
公开(公告)日：2011-12-13
申请号：US10525797
申请日：2003-08-28
IPC分类号： B08B7/04
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/52 , H01L21/67028 , H01L21/67253 , H01L22/26
摘要： A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.
摘要翻译： 基板处理单元包括用于接收基板的处理容器，用于向处理容器提供清洁气体以清洁处理容器内部的清洁气体供应系统，用于排出处理容器的排气器，用于排出处理容器的操作状态检测器 检测排气器的运行状态，以及终点检测器，用于根据来自运行状态检测器的检测结果来检测清洗的终点。
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公开(公告)号：US20060154383A1
公开(公告)日：2006-07-13
申请号：US10526019
申请日：2003-08-15
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45557
摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.
摘要翻译： 在处理装置中，提供包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的工艺气体 进入处理室（2）。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。
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8.发明申请Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing 失效衬底处理单元，检测衬底处理单元的清洁终点的方法以及检测衬底处理终点的方法公开(公告)号：US20050241761A1
公开(公告)日：2005-11-03
申请号：US10525797
申请日：2003-08-28
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/52 , H01L21/67028 , H01L21/67253 , H01L22/26
摘要： A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.
摘要翻译： 基板处理单元包括用于接收基板的处理容器，用于向处理容器提供清洁气体以清洁处理容器内部的清洁气体供应系统，用于排出处理容器的排气器，用于排出处理容器的操作状态检测器 检测排气器的运行状态，以及终点检测器，用于根据来自运行状态检测器的检测结果来检测清洗的终点。
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9.发明授权公开(公告)号：US08574448B2
公开(公告)日：2013-11-05
申请号：US12752813
申请日：2010-04-01
申请人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
发明人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
CPC分类号： H01J37/321 , B08B7/0035 , C23G5/00 , H01J37/32357 , H01L21/3065 , H01L21/31116
摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.
摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。
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公开(公告)号：USD617018S1
公开(公告)日：2010-06-01
申请号：US29335033
申请日：2009-04-07
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