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公开(公告)号：US6084752A
公开(公告)日：2000-07-04
申请号：US802709
申请日：1997-02-19
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
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公开(公告)号：US6031692A
公开(公告)日：2000-02-29
申请号：US223663
申请日：1998-12-30
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , H01F10/3204 , H01F10/3268 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.
摘要翻译： 本发明的磁阻装置包括：软磁性层; 硬磁层; 形成在软磁性层和硬磁性层之间的非磁性层; 以及设置在所述软磁性层和所述非磁性层之间的界面处的用于增强磁散射的界面磁性层，其中所述软磁性层包括无定形结构。
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公开(公告)号：US06535362B2
公开(公告)日：2003-03-18
申请号：US08979886
申请日：1997-11-26
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3133 , G11B5/3903 , G11B5/3951 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01L43/08
摘要： The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.
摘要翻译： 本发明的磁阻器件包括：通过其间的非磁性层堆积的至少两个磁性层; 以及形成为与最外两层磁性层中的至少一层接触的传导电子的金属反射层。 金属反射层与最外面的磁性层的与非磁性层接触的最外面的磁性层的另一个表面相对的一个表面接触。 金属反射层可能反射传导电子同时保持电子的自旋方向。
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4.发明授权公开(公告)号：US06245450B1
公开(公告)日：2001-06-12
申请号：US09236711
申请日：1999-01-25
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3919 , G11B5/3925 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe—M—O layer (where M=Al, Ti, Co, Mn, Cr, Ni or V).
摘要翻译： 本发明的交换耦合膜包括基板和多层膜。 多层膜包括：铁磁层和与铁磁层相邻设置的用于抑制铁磁层的磁化旋转的磁化抑制层; 磁化抑制层包括Fe-M-O层（其中M = Al，Ti，Co，Mn，Cr，Ni或V）。
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5.发明授权Magnetoresistive device with an &agr;-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness 有权具有α-Fe2O3反铁磁膜的磁阻器件和不同厚度的间接交换耦合膜层公开(公告)号：US06597547B1
公开(公告)日：2003-07-22
申请号：US09162300
申请日：1998-09-28
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包括α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。
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6.发明授权Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 有权交换耦合膜，磁阻效应器件，磁阻有效头和用于生产交换耦合膜的方法公开(公告)号：US06258470B1
公开(公告)日：2001-07-10
申请号：US09228703
申请日：1999-01-12
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
摘要翻译： 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8
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7.发明授权Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same 失效磁阻效应器件和磁阻效应型头，存储器件和使用其的放大器件
公开(公告)号：US5841611A
公开(公告)日：1998-11-24
申请号：US429714
申请日：1995-04-27
IPC分类号： G01R33/09 , G06K19/06 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H03F7/02 , H03F15/00 , G11B5/127
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/3281 , H01L27/222 , H01L43/10 , G11B2005/3996 , G11B5/3925 , G11C2211/5616
摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要翻译： 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。
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8.发明授权公开(公告)号：US06567246B1
公开(公告)日：2003-05-20
申请号：US09516552
申请日：2000-03-01
申请人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
发明人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
摘要： A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.
摘要翻译： 磁阻效应元件包括自由层，其中其磁化方向响应于外部磁场容易旋转，第一非磁性层和设置在与第一非磁性层的自由层相对的一侧上的第一被钉扎层 非磁性层，其中第一被钉扎层的磁化方向响应于外部磁场而不容易旋转。 第一被钉扎层和自由层中的至少一个包括与第一非磁性层接触的第一金属磁性膜和第一氧化物磁性膜。
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公开(公告)号：US06400537B2
公开(公告)日：2002-06-04
申请号：US09099683
申请日：1998-06-18
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
摘要翻译： 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。
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10.发明授权Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same 有权磁电阻效应器件，磁阻效应型头，存储器件和使用其的放大器件
公开(公告)号：US06111782A
公开(公告)日：2000-08-29
申请号：US270647
申请日：1999-03-16
IPC分类号： G01R33/09 , G06K19/06 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H03F7/02 , H03F15/00 , G11C11/00
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/3281 , H01L27/222 , H01L43/10 , G11B2005/3996 , G11B5/3925 , G11C2211/5616
摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要翻译： 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。
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