公开(公告)号：US08153926B2

公开(公告)日：2012-04-10

申请号：US12750877

申请日：2010-03-31

申请人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

IPC分类号： B23K10/00

CPC分类号： H01L21/30655 ,  B81C1/00595 ,  B81C2201/014 ,  H01J37/3255 ,  H01J2237/334

摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence.

摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面向基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，以及通过将高频电力施加到浮动电极并以预定顺序将蚀刻气体引入真空室中而随后蚀刻衬底的步骤。

公开(公告)号：US07728252B2

公开(公告)日：2010-06-01

申请号：US11571600

申请日：2005-06-23

申请人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

IPC分类号： B23K10/00

CPC分类号： H01L21/30655 ,  B81C1/00595 ,  B81C2201/014 ,  H01J37/3255 ,  H01J2237/334

摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1).

摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面对基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，以及通过将浮动电极悬浮施加高频电力并以预定顺序将蚀刻气体引入真空室中，随后蚀刻衬底的步骤（图1 ）。

公开(公告)号：US20070166844A1

公开(公告)日：2007-07-19

申请号：US11571600

申请日：2005-06-23

申请人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

IPC分类号： H01L21/00

CPC分类号： H01L21/30655 ,  B81C1/00595 ,  B81C2201/014 ,  H01J37/3255 ,  H01J2237/334

摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1).

摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面向基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，并且通过将浮动电极悬浮施加高频电力并以预定顺序将蚀刻气体引入真空室中，随后蚀刻衬底的步骤（图1 ）。

公开(公告)号：US20100133235A1

公开(公告)日：2010-06-03

申请号：US12597637

申请日：2008-05-08

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/3266 ,  C23C4/00 ,  C23C4/11 ,  H01J37/16 ,  H01J37/321

摘要： A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

摘要翻译： 提供了具有优异的面内均匀性和高蚀刻速率的干蚀刻装置以及干蚀刻方法。 干蚀刻装置包括具有上等离子体产生室和下基板处理室的真空室; 设置在所述等离子体产生室的侧壁外侧的磁场线圈; 天线线圈，设置在所述磁场线圈和所述侧壁的外侧之间并连接到高频电源; 以及用于引入设置在等离子体产生室顶部的蚀刻气体的装置，其中所述侧壁由相对介电常数为4以上的材料形成。

公开(公告)号：US20100133233A1

公开(公告)日：2010-06-03

申请号：US12597645

申请日：2008-05-08

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi ,  Tadayuki Satou

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi ,  Tadayuki Satou

IPC分类号： B44C1/22

CPC分类号： H01L21/306 ,  H01L41/332 ,  H03H3/02

摘要： A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided.The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.

摘要翻译： 提供了一种干法蚀刻方法，通过该方法可以在两面上进行干蚀刻而不产生裂纹。 干蚀刻方法包括：将具有碳氟化合物气体和稀有气体的蚀刻气体引入真空室; 在具有预定压力的真空室中产生等离子体; 以及将被处理基板附着在设置在基板台上的导热片的粘接面上。

公开(公告)号：US20120171869A1

公开(公告)日：2012-07-05

申请号：US13386213

申请日：2010-08-12

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/302

CPC分类号： H01L21/30655

摘要： There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

摘要翻译： 提供了一种蚀刻方法，其可以在由硅制成的待处理物体中形成具有期望的纵横比和形状的沟槽或通孔。 蚀刻方法包括：含卤化氢的气体基蚀刻步骤，通过将含卤化氢的气体引入真空室来蚀刻硅衬底; 含氟气体蚀刻步骤，通过将真空室中引入含氟气体来蚀刻硅衬底; 通过溅射固体材料在硅衬底上形成保护膜的保护膜形成步骤; 以及通过对基板电极施加射频偏置功率来去除部分保护膜的保护膜去除步骤。 依次重复进行含氟气体蚀刻工序，保护膜形成工序和保护膜除去工序。

公开(公告)号：US20110180388A1

公开(公告)日：2011-07-28

申请号：US12672169

申请日：2008-08-05

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： C23C14/34 ,  C23F1/08 ,  C23C14/06

CPC分类号： H01L21/30655 ,  C23C14/022 ,  C23C14/046 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3266

摘要： [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity.[Solving Means] When sputtered particles that are beat out from a target by plasma are deposited on a surface of a substrate, those sputtered particles are decomposed by the plasma to thus generate active species, and then deposited on the surface of the substrate. Accordingly, a deposition mode similar to plasma CVD is obtained, and sputtering deposition with high coverage property and excellent in-plane uniformity is enabled. Particularly, since a high-frequency electric field and a ring-shaped magnetic neutral line are used for a plasma source, it is possible to efficiently generate plasma that has extremely high density in a region in which a magnetic field is zero. That plasma realizes plasma processing with high in-plane uniformity by arbitrarily adjusting a formation position and a size of the magnetic neutral line.

摘要翻译： 提供具有高覆盖性和优异的面内均匀性的等离子体处理方法和等离子体处理装置。 [解决方案]当通过等离子体从目标物拍出的溅射颗粒沉积在基板的表面上时，那些溅射的颗粒被等离子体分解，从而产生活性物质，然后沉积在基板的表面上。 因此，获得与等离子体CVD相似的沉积模式，能够实现高覆盖性和优异的面内均匀性的溅射沉积。 特别地，由于使用高频电场和环形磁中性线作为等离子体源，所以可以有效地产生在磁场为零的区域中具有极高密度的等离子体。 该等离子体通过任意调整磁性中性线的形成位置和尺寸来实现具有高的面内均匀性的等离子体处理。

公开(公告)号：US20110117742A1

公开(公告)日：2011-05-19

申请号：US12920925

申请日：2009-03-05

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Takahide Murayama

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Takahide Murayama

IPC分类号： H01L21/3065

CPC分类号： H01J37/34 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/30655

摘要： [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions.[Solving Means] In a plasma processing method according to the present invention, the process of etching a substrate (W) having a mask pattern formed on a surface thereof by using plasma formed in a vacuum vessel (21) and the process of forming a protective film on a side wall portion of an etching pattern formed on the substrate (W) by sputtering a target material (30) disposed in the vacuum vessel (21) by using the plasma are alternately repeated. In the plasma processing method, a uniform in-plane distribution is maintained over a time period from the start to the end of plasma processing by changing a radius of a magnetic neutral line (25) in accordance with progress of the plasma processing including the etching processing and the processing of forming a protective film for the substrate (W).

摘要翻译： 本发明提供一种能够通过优化蚀刻条件从蚀刻开始到结束来保持均匀的面内分布的等离子体处理方法。 本发明的等离子体处理方法中，使用在真空容器（21）中形成的等离子体，对其表面上形成有掩模图案的基板（W）进行蚀刻的工序， 交替地重复通过溅射设置在真空容器（21）中的目标材料（30）在基板（W）上形成的蚀刻图案的侧壁部分上的保护膜。 在等离子体处理方法中，根据包括蚀刻的等离子体处理的进展，通过改变磁性中性线（25）的半径，在从等离子体处理的开始到结束的时间段内保持均匀的面内分布 处理和形成用于基板（W）的保护膜的处理。

公开(公告)号：US20100062606A1

公开(公告)日：2010-03-11

申请号：US12594966

申请日：2008-04-10

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： The object of the present invention is to provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. In a dry etching method according to the present invention, a substrate in which a semiconductor layer is formed on an insulating layer formed of a silicon oxide is prepared, a through-hole is formed in the semiconductor layer, and a resin film is formed on side walls of the through-hole and a recessed portion while forming the recessed portion in the insulating layer by etching an area in which the insulating layer is exposed via the through-hole. By forming the resin film on the side wall of the recessed portion, the side wall of the recessed portion is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film on the side wall of the through-hole, the side wall of the through-hole is protected from the collision of ions in plasma and a hole shape of the through-hole is prevented from fluctuating.

摘要翻译： 本发明的目的是提供一种能够抑制绝缘层中的凹口的产生并且可以实现高精度微细加工的干蚀刻方法。 在根据本发明的干蚀刻方法中，制备了在由氧化硅形成的绝缘层上形成半导体层的基板，在半导体层中形成通孔，并且在 通过蚀刻绝缘层经由通孔露出的区域，同时在绝缘层中形成凹部，同时通孔的侧壁和凹部。 通过在凹部的侧壁上形成树脂膜，可以防止凹部的侧壁与等离子体中的离子碰撞，并且抑制凹部侧壁中的切口的产生。 此外，通过在通孔的侧壁上形成树脂膜，可以防止通孔的侧壁免受等离子体中的离子的碰撞，并且防止通孔的孔形状发生波动。

公开(公告)号：US20090261066A1

公开(公告)日：2009-10-22

申请号：US12440116

申请日：2007-09-05

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/321 ,  C03C15/00 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/67069

摘要： The present invention herein provides an apparatus and a method for dry etching, which can solve such a problem that an object to be processed undergoes cracking during the etching procedures due to the heat deformation thereof and thermal shocks, possibly encountered when subjecting, to dry etching procedures, the object having a high thermal expansion coefficient. A dry etching apparatus is provided with an electrode structure having a convex-shaped surface, the convex-shape is one concentric with the cross section of the electrode structure and the height thereof falls within the range of from 0.2 to 1.0 mm. An object consisting of a material having a thermal expansion coefficient of not less than 30×10−7/° C. is subjected to dry etching while using the foregoing dry etching apparatus.

摘要翻译： 本发明提供了一种用于干法蚀刻的装置和方法，其可以解决在蚀刻过程中由于其热变形和热冲击而被处理物体经受裂纹的问题，当经受干蚀刻时可能遇到的热冲击 程序，该物体具有较高的热膨胀系数。 干蚀刻装置设置有具有凸形表面的电极结构，凸形与电极结构的横截面同心，其高度在0.2至1.0mm的范围内。 使用上述干式蚀刻装置对由热膨胀系数为30×10 -7 /℃以上的材料构成的物体进行干式蚀刻。