Coaxial cable
    1.
    发明授权
    Coaxial cable 失效
    同轴电缆

    公开(公告)号:US5463188A

    公开(公告)日:1995-10-31

    申请号:US251044

    申请日:1994-05-31

    IPC分类号: H01B11/18 H01B7/34

    CPC分类号: H01B11/1821

    摘要: The coaxial cable of the present invention is an insulating layer, an outer conducting layer and a protective film layer formed in that order around a center conductor, the outer conducting layer being formed from a primary transverse winding and a secondary transverse winding, each of a plurality of thin metal wires, the winding directions of the transverse windings being opposite each other. The winding angle of the primary and secondary transverse windings with respect to the center conductor is 30.degree..+-.5.degree. and the winding pitches of the primary and secondary transverse windings are from 0.8 to 2.0 times the bending radius of the coaxial cable.

    摘要翻译: 本发明的同轴电缆是围绕中心导体依次形成的绝缘层,外部导电层和保护膜层,外部导电层由初级横向绕组和次级横向绕组形成, 多个细金属丝,横向绕组的卷绕方向彼此相对。 初级和次级横向绕组相对于中心导体的绕组角度为30°+/- 5°,初级和次级横向绕组的绕组间距为同轴电缆弯曲半径的0.8至2.0倍。

    Multi-layered insulated wire for high frequency transformer winding
    2.
    发明授权
    Multi-layered insulated wire for high frequency transformer winding 失效
    用于高频变压器绕组的多层绝缘电线

    公开(公告)号:US5326935A

    公开(公告)日:1994-07-05

    申请号:US929657

    申请日:1992-08-12

    IPC分类号: H01B7/02 H01F27/32 H01B7/34

    摘要: A bundled conductor manufactured by bundling a plurality of small diameter conductors 1, or a bundled conductor 2 manufactured by giving an extremely rough twisting pitch, which is 20 times or more larger than an outer diameter of said bundled conductor, to the bundled conductor is formed. Then, an insulating layer 3 comprising 3 layers 3a, 3b and 3c, each comprising a heat-resistant plastic film, is arranged around the bundled conductor above. A required voltage resistance characteristics is provided and maintained by any 2 of the aforesaid 3 insulating layers, and each of the 3 insulating layers described above is independent respectively and can be separated from other ones.The multi-layered insulated wire constructed as described above is available as an insulated electric wire for a winding to be used in a transformer which satisfies various requirements for safety such as IEC and UL, and with this multi-layered insulated wire it is possible to suppress heat emission in a high frequency switching transformer.

    摘要翻译: 形成了通过将多个小直径导体1或通过将非常粗糙的扭曲节距(其比所述捆扎导体的外径大20倍以上)制造的捆扎导体2捆扎在捆扎导体上而制成的捆扎导体 。 然后,在上面的捆扎导体周围设置包括3层3a,3b和3c的绝缘层3,每层包括耐热塑料膜。 所需的电压电阻特性由上述3个绝缘层中的任何2个提供和维持,并且上述3个绝缘层中的每一个分别是独立的,并且可以与其它绝缘层分离。 如上所述构造的多层绝缘电线可用作用于变压器中的用于绝缘电线的绝缘电线,其满足诸如IEC和UL的各种安全要求,并且通过该多层绝缘电线, 抑制高频开关变压器的发热。

    Multi-layered insulated wire for high frequency transformer winding
    3.
    发明授权
    Multi-layered insulated wire for high frequency transformer winding 失效
    用于高频变压器绕组的多层绝缘电线

    公开(公告)号:US5362925A

    公开(公告)日:1994-11-08

    申请号:US182998

    申请日:1994-01-18

    IPC分类号: H01B7/02 H01F27/32 H01B7/34

    摘要: A bundled conductor manufactured by bundling a plurality of small diameter conductors 1, or a bundled conductor 2 manufactured by giving an extremely rough twisting pitch, which is 20 times or more larger than an outer diameter of said bundled conductor, to the bundled conductor is formed. Then, an insulating layer 3 comprising 3 layers 3a, 3b and 3c, each comprising a heat-resistant plastic film, is arranged around the bundled conductor above. A required voltage resistance characteristics is provided and maintained by any 2 of the aforesaid 3 insulating layers, and each of the 3 insulating layers described above is independent respectively and can be separated from other ones.The multi-layered insulated wire constructed described above is available as an insulated electric wire for a winding to be used in a transformer which satisfies various requirements for safety such as IEC and UL, and with this multi-layered insulated wire it is possible to suppress heat emission in a high frequency switching transformer.

    摘要翻译: 形成了通过将多个小直径导体1或通过将非常粗糙的扭曲节距(其比所述捆扎导体的外径大20倍以上)制造的捆扎导体2捆扎在捆扎导体上而制成的捆扎导体 。 然后,在上面的捆扎导体周围设置包括3层3a,3b和3c的绝缘层3,每层包括耐热塑料膜。 所需的电压电阻特性由上述3个绝缘层中的任何2个提供和维持,并且上述3个绝缘层中的每一个分别是独立的,并且可以与其它绝缘层分离。 上述构造的多层绝缘线可用作用于变压器的绕组的绝缘电线,其满足诸如IEC和UL的各种安全要求,并且通过该多层绝缘电线可以抑制 高频开关变压器中的发热。

    Hollow core body for signal transmission cable
    4.
    发明授权
    Hollow core body for signal transmission cable 有权
    空心芯体用于信号传输电缆

    公开(公告)号:US09318238B2

    公开(公告)日:2016-04-19

    申请号:US14345053

    申请日:2011-10-04

    摘要: A hollow core body for signal transmission cable comprises an inner conductor that employs a compressed bunched conductor formed by bunching and compressing plural strands such that a cross-section of the compressed bunched conductor is substantially circular, and a hollow insulating core that includes an inner annular member, rib members, an outer annular member, and hollow members. Accordingly, as almost no recesses are produced on the circumferential surface of the compressed bunched conductor, weakening of the mechanical strength due to presence of recesses on the circumferential surface of the inner conductor can be suppressed.

    摘要翻译: 用于信号传输电缆的中空芯体包括内导体,其使用通过聚束和压缩多股而形成的压缩聚束导体,使得压缩的聚束导体的横截面基本上为圆形,以及中空绝缘芯,其包括内环形 构件,肋构件,外环形构件和中空构件。 因此,由于在压缩的聚束导体的圆周表面上几乎没有产生凹陷,因此可以抑制由于在内导体的圆周表面上存在凹陷而导致的机械强度的弱化。

    Method for manufacture of a physical quantity detector
    6.
    发明授权
    Method for manufacture of a physical quantity detector 失效
    物理量检测器的制造方法

    公开(公告)号:US07708051B2

    公开(公告)日:2010-05-04

    申请号:US11657162

    申请日:2007-01-24

    IPC分类号: B22D17/00 B22D33/04

    CPC分类号: G01L9/0051 B22D15/02

    摘要: A physical quantity detector, such as a pressure sensor and a load sensor, includes a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part. The cylindrical part is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold includes a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part.

    摘要翻译: 诸如压力传感器和负载传感器的物理量检测器包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分。 通过熔化具有能够产生非晶合金的组成的合金材料,将所得熔融合金注入金属模具中,并且冷却金属模具中的熔融合金以赋予合金非晶性,从而制造圆柱形部分。 金属模具包括具有用于形成空腔的至少两个分开部分和插入空腔中的插入销以便限定圆柱形部件的内部构造的分开模具,或者还包括插入模具中的插入芯部 从而形成与应变发生部的表面对应的空腔的表面。

    Substrate Processing System, Method of Confirmation of Its State of Use, and Method of Prevention of Illicit Use
    7.
    发明申请
    Substrate Processing System, Method of Confirmation of Its State of Use, and Method of Prevention of Illicit Use 有权
    基板加工系统,确认其使用状态的方法和防止非法使用的方法

    公开(公告)号:US20070272151A1

    公开(公告)日:2007-11-29

    申请号:US11659878

    申请日:2005-08-10

    IPC分类号: H01L21/02 H04L9/00

    摘要: [PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.

    摘要翻译: [问题]为了确认基板处理系统是否被非法使用,并且在存在非法使用的情况下防止使用。 [解决方案]许可证文件LF是包括用于特定用户的基板处理系统的使用条件的文件加密许可证信息L. 匹配确认程序P 2确认由解密程序P 1解密的许可证文件LF的内容与从基板处理系统获得的设备信息DI,网络信息NI和当前时间CT之间的匹配,以确认事实的存在 的非法使用。 如果存在非法使用,则控制程序P 3基于来自匹配确认程序P 2的信息停止基板处理系统的操作,直到采取预定的动作为止。

    Method for manufacture of a physical quantity detector
    8.
    发明申请
    Method for manufacture of a physical quantity detector 失效
    物理量检测器的制造方法

    公开(公告)号:US20070181222A1

    公开(公告)日:2007-08-09

    申请号:US11657162

    申请日:2007-01-24

    IPC分类号: C23C22/70 B32B15/01

    CPC分类号: G01L9/0051 B22D15/02

    摘要: In the manufacture of a physical quantity detector, such as a pressure sensor and a load sensor, comprising a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part, the cylindrical part mentioned above is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold is composed of a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part. In another embodiment, the cavity is formed so that the parting face of the mold corresponds to the surface of the strain generating part.

    摘要翻译: 在物理量检测器的制造中,例如压力传感器和负载传感器,包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分,上述圆柱形部分 通过熔化具有能够产生非晶合金的组成的合金材料制成,将所得熔融合金注入金属模具中,并且冷却金属模具中的熔融合金以赋予合金非晶质。 金属模具由具有至少两个用于形成空腔的分开部分和插入空腔中的插入销的分开模具组成,以限定圆柱形部件的内部构造,或者还有插入芯部 以形成对应于应变发生部的表面的空腔的表面。 在另一个实施例中,形成空腔,使得模具的分型面对应于应变发生部件的表面。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US07247522B2

    公开(公告)日:2007-07-24

    申请号:US11018250

    申请日:2004-12-22

    申请人: Tadashi Yamaguchi

    发明人: Tadashi Yamaguchi

    IPC分类号: H01L23/48

    摘要: In order to provide a semiconductor device which makes it possible to mount a semiconductor element on the substrate of the semiconductor device main body at the correct position with a higher degree of accuracy, a semiconductor element 2 is mounted at a circuit forming surface of a semiconductor substrate 1 at the periphery of which pad electrodes 5 are provided and a specific area in the semiconductor device containing the semiconductor element 2 is sealed with resin. At the circuit forming surface of the semiconductor substrate 1, reference lines 3 are formed in correspondence to the positions of at least three corners of the semiconductor element 2 to be mounted.

    摘要翻译: 为了提供一种能够以更高的精度将半导体元件安装在半导体器件主体的基板上的正确位置的半导体器件,半导体元件2安装在半导体的电路形成表面 在其周边设置有衬垫电极5的衬底1,并且用树脂密封包含半导体元件2的半导体器件中的比表面积。 在半导体衬底1的电路形成表面上,对应于要安装的半导体元件2的至少三个角的位置形成参考线3。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20070138573A1

    公开(公告)日:2007-06-21

    申请号:US11565913

    申请日:2006-12-01

    IPC分类号: H01L29/76 H01L21/336

    摘要: A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.

    摘要翻译: 根据本发明的半导体器件包括硅衬底,在硅衬底的主表面上形成有栅绝缘膜的栅电极,形成为覆盖栅电极的侧表面的侧壁间隔件, 至少两层作为最下层的氧化硅膜和形成在其上的氮化硅膜,在硅衬底的主表面中形成的源极区和漏极区,以便夹着栅电极,保护膜形成为 为了覆盖氧化硅膜的端面而不延伸到所述氮化硅膜的下方,所述端面位于所述源极区域和所述漏极区域的一侧,以及形成在所述源极区域和所述漏极区域中的金属硅化物层 所述保护膜的一侧远离所述栅电极。