摘要:
The coaxial cable of the present invention is an insulating layer, an outer conducting layer and a protective film layer formed in that order around a center conductor, the outer conducting layer being formed from a primary transverse winding and a secondary transverse winding, each of a plurality of thin metal wires, the winding directions of the transverse windings being opposite each other. The winding angle of the primary and secondary transverse windings with respect to the center conductor is 30.degree..+-.5.degree. and the winding pitches of the primary and secondary transverse windings are from 0.8 to 2.0 times the bending radius of the coaxial cable.
摘要:
A bundled conductor manufactured by bundling a plurality of small diameter conductors 1, or a bundled conductor 2 manufactured by giving an extremely rough twisting pitch, which is 20 times or more larger than an outer diameter of said bundled conductor, to the bundled conductor is formed. Then, an insulating layer 3 comprising 3 layers 3a, 3b and 3c, each comprising a heat-resistant plastic film, is arranged around the bundled conductor above. A required voltage resistance characteristics is provided and maintained by any 2 of the aforesaid 3 insulating layers, and each of the 3 insulating layers described above is independent respectively and can be separated from other ones.The multi-layered insulated wire constructed as described above is available as an insulated electric wire for a winding to be used in a transformer which satisfies various requirements for safety such as IEC and UL, and with this multi-layered insulated wire it is possible to suppress heat emission in a high frequency switching transformer.
摘要:
A bundled conductor manufactured by bundling a plurality of small diameter conductors 1, or a bundled conductor 2 manufactured by giving an extremely rough twisting pitch, which is 20 times or more larger than an outer diameter of said bundled conductor, to the bundled conductor is formed. Then, an insulating layer 3 comprising 3 layers 3a, 3b and 3c, each comprising a heat-resistant plastic film, is arranged around the bundled conductor above. A required voltage resistance characteristics is provided and maintained by any 2 of the aforesaid 3 insulating layers, and each of the 3 insulating layers described above is independent respectively and can be separated from other ones.The multi-layered insulated wire constructed described above is available as an insulated electric wire for a winding to be used in a transformer which satisfies various requirements for safety such as IEC and UL, and with this multi-layered insulated wire it is possible to suppress heat emission in a high frequency switching transformer.
摘要:
A hollow core body for signal transmission cable comprises an inner conductor that employs a compressed bunched conductor formed by bunching and compressing plural strands such that a cross-section of the compressed bunched conductor is substantially circular, and a hollow insulating core that includes an inner annular member, rib members, an outer annular member, and hollow members. Accordingly, as almost no recesses are produced on the circumferential surface of the compressed bunched conductor, weakening of the mechanical strength due to presence of recesses on the circumferential surface of the inner conductor can be suppressed.
摘要:
A semiconductor device includes a semiconductor chip having electrode pads, and a rewiring pattern having interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes columnar electrodes each of which has a main body section and a protrusion section, and a sealing section which has a top face having a height the same as the top faces of the protrusion sections. The semiconductor device also includes solder balls formed on the protrusion sections. The semiconductor device also has trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed face defined by the trenches. Each solder ball is electrically connected to the top face and side faces of the protrusion section of each electrode.
摘要:
A physical quantity detector, such as a pressure sensor and a load sensor, includes a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part. The cylindrical part is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold includes a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part.
摘要:
[PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.
摘要:
In the manufacture of a physical quantity detector, such as a pressure sensor and a load sensor, comprising a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part, the cylindrical part mentioned above is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold is composed of a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part. In another embodiment, the cavity is formed so that the parting face of the mold corresponds to the surface of the strain generating part.
摘要:
In order to provide a semiconductor device which makes it possible to mount a semiconductor element on the substrate of the semiconductor device main body at the correct position with a higher degree of accuracy, a semiconductor element 2 is mounted at a circuit forming surface of a semiconductor substrate 1 at the periphery of which pad electrodes 5 are provided and a specific area in the semiconductor device containing the semiconductor element 2 is sealed with resin. At the circuit forming surface of the semiconductor substrate 1, reference lines 3 are formed in correspondence to the positions of at least three corners of the semiconductor element 2 to be mounted.
摘要:
A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.