摘要:
A wavelength monitor comprises a cylindrical lens configured to allow a laser beam emitted from a semiconductor laser to pass therethrough, first and second photodetectors configured to receive the laser beam through the cylindrical lens, and a wavelength filter disposed in an optical path between the semiconductor laser and the first photodetector.
摘要:
A backward laser beam radiated from a laser diode is received in a photo diode, and an intensity of a forward laser beam radiated from the laser diode is adjusted according to the intensity of the received backward laser beam. The forward laser beam radiated from the laser diode is collimated in a first lens held by a lens holder, and a most portion of the forward laser beam is output through a package window inclined with respect to an optical axis of the laser diode. The remaining portion of the forward laser beam is reflected on the package window as a reflected laser beam and is transmitted through the first lens to be converged in a narrow area placed above the laser diode. A light shielding plate extending in a plane orthogonal to the optical axis is arranged in a wide area including the narrow area and shields the photo diode from the reflected laser beam from. Therefore, the intensity of the forward laser beam radiated from the laser diode is correctly adjusted. Also, the light shielding plate is not soldered to the laser diode but is fixed to lens fixing posts arranged to support the lens holder. Therefore, a driving current can be supplied to the laser diode through a bonding wire without being influenced by the light shielding plate.
摘要:
An optical signal emitted from a semiconductor laser is converged by a lens and then received by a single uniaxial birefringent crystal having a C axis that is inclined at an angle other than 90 degrees against a laser optical axis to output an optical signal having a polarized wave component of constant intensity corresponding to the wavelength of the optical signal regardless of temperature changes. The optical signal has an ordinary ray vibrating in a direction perpendicular to a plane including both the C axis and the laser optical axis, and an extraordinary ray vibrating in a direction perpendicular to both the ordinary ray and the laser optical axis. A first main photo detector detects the intensity of a p-polarized component of the optical signal that has passed through a polarizer and a second photo detector directly receives the optical signal converged by the lens.
摘要:
A wavelength filter is disposed between a laser diode and a photodiode that receives the rear-facet output light of the laser diode. Either a part on one side of an input or an output surface of the wavelength filter is bounded to a protrusion provided in a metal holder for holding the wavelength filter. As a result, a support structure is obtained that does not bring a damage on the wavelength filter caused by degradation of optical characteristics or temperature variation of the wavelength filter when support-fixing a wavelength filter having a complex refractive index crystal.
摘要:
A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.
摘要:
A stem for an optical element includes a base-like portion located on a portion of a package side surface of an eyelet, higher than the package side surface. A block is located on a surface of the base-like portion of the eyelet. An optical element mounting surface of the block projects outward, overhanging a side face of the base-like portion, close to lead electrodes which are inserted through holes of the eyelet, respectively, and sealed with sealing glass. High-frequency line substrates are located on the optical element mounting surface of the block, and Au films of the high-frequency line substrate are electrically connected to respective lead electrodes.
摘要:
A stem for an optical element includes a base-like portion located on a portion of a package side surface of an eyelet, higher than the package side surface. A block is located on a surface of the base-like portion of the eyelet. An optical element mounting surface of the block projects outward, overhanging a side face of the base-like portion, close to lead electrodes which are inserted through holes of the eyelet, respectively, and sealed with sealing glass. High-frequency line substrates are located on the optical element mounting surface of the block, and Au films of the high-frequency line substrate are electrically connected to respective lead electrodes.
摘要:
A wavelength filter includes a solid material that is optically transparent and including a pair of planar surfaces substantially parallel to each other; and a supporting member that supports the solid material on a planar surface of the solid material other than the pair of planar surfaces, the supporting member having a rigidity higher than that of the solid material. The solid material is a birefringent material of which an optical axis makes a predetermined angle with respect to a normal to the pair of planar surfaces, and the wavelength filter selects light having a wavelength that is determined by an optical length between the pair of planar surfaces by resonating the light between the pair of planar surfaces.
摘要:
A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on a side of the first semiconductor layer, epitaxially growing a second semiconductor layer in a region on the semiconductor substrate other than a region formed with the first insulating layer, forming a first semiconductor element in the first semiconductor layer on the first insulating layer, and forming a second semiconductor element in the second semiconductor layer on the second insulating layer.
摘要:
A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surface are disposed on the same plane. A heat radiation side of the thermoelectric semiconductor is disposed such that a direction from the heat absorbing side to the heat radiation side of the thermoelectric semiconductor is parallel with the upper surface of the substrate. Based on this arrangement, it is possible to set the environmental temperature of an optical module to the same level as the operation temperature of a laser diode.