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    METHOD FOR FORMING SEMICONDUCTOR DEVICE AND METHOD FOR FORMING PHOTOVOLTAIC DEVICE
    3.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICE AND METHOD FOR FORMING PHOTOVOLTAIC DEVICE 失效
    形成半导体器件的方法和形成光伏器件的方法

    公开(公告)号：US20080096291A1

    公开(公告)日：2008-04-24

    申请号：US11871534

    申请日：2007-10-12

    申请人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

    发明人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/509 ,  C23C16/545 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

    摘要： A method for forming a semiconductor device including a semiconductor layer, formed of a silicon-based deposited film containing crystals by plasma-enhanced CVD, includes the steps of applying a bias voltage between a high-frequency electrode and a substrate with the high-frequency electrode being negative when the semiconductor layer is formed; detecting sparks occurring on the high-frequency electrode or the substrate; and controlling at least one condition, selected from the group consisting of high-frequency power, bias voltage, bias current, pressure, gas flow rate, and interelectrode distance, based on the results of the detection so that the number of sparks with durations of 100 ms or more is 1 or less sparks per minute.

    摘要翻译： 一种用于形成半导体器件的方法，包括通过等离子体增强CVD由含有晶体的硅基沉积膜形成的半导体层，包括以下步骤：在高频电极和衬底之间施加高频 当形成半导体层时，电极为负极; 检测在高频电极或基板上发生的火花; 并且基于检测结果控制从由高频功率，偏置电压，偏置电流，压力，气体流量和电极间距离组成的组中选择的至少一个条件，使得具有持续时间的火花的数量 100 ms以上是每分钟1次以下的火花。

    Method for forming semiconductor device and method for forming photovoltaic device
    4.
    发明授权
    Method for forming semiconductor device and method for forming photovoltaic device 失效
    用于形成半导体器件的方法和用于形成光伏器件的方法

    公开(公告)号：US07534628B2

    公开(公告)日：2009-05-19

    申请号：US11871534

    申请日：2007-10-12

    申请人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

    发明人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

    IPC分类号： H01L21/00 ,  H01L21/324 ,  C23C14/00

    CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/509 ,  C23C16/545 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

    摘要： A method for forming a semiconductor device including a semiconductor layer, formed of a silicon-based deposited film containing crystals by plasma-enhanced CVD, includes the steps of applying a bias voltage between a high-frequency electrode and a substrate with the high-frequency electrode being negative when the semiconductor layer is formed; detecting sparks occurring on the high-frequency electrode or the substrate; and controlling at least one condition, selected from the group consisting of high-frequency power, bias voltage, bias current, pressure, gas flow rate, and interelectrode distance, based on the results of the detection so that the number of sparks with durations of 100 ms or more is 1 or less sparks per minute.

    摘要翻译： 一种用于形成半导体器件的方法，包括通过等离子体增强CVD由含有晶体的硅基沉积膜形成的半导体层，包括以下步骤：在高频电极和衬底之间施加高频 当形成半导体层时，电极为负极; 检测在高频电极或基板上发生的火花; 并且基于检测结果控制从由高频功率，偏置电压，偏置电流，压力，气体流量和电极间距离组成的组中选择的至少一个条件，使得具有持续时间的火花的数量 100 ms以上是每分钟1次以下的火花。

    Method for manufacturing an electromechanical transducer
    8.
    发明授权
    Method for manufacturing an electromechanical transducer 有权
    机电换能器的制造方法

    公开(公告)号：US09166502B2

    公开(公告)日：2015-10-20

    申请号：US13587751

    申请日：2012-08-16

    申请人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

    发明人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

    IPC分类号： H04R31/00 ,  H02N1/00 ,  H01G5/16

    CPC分类号： B06B1/0292 ,  H01G5/16 ,  H02N1/006 ,  Y10T29/43

    摘要： The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.

    摘要翻译： 本发明提供了一种用于减小每个具有通过布线的机电换能器之间的性能分散的技术。 制造机电换能器的方法包括：获得其中具有通孔的绝缘部分结合到导电基底上的结构; 用导电材料填充通孔以形成与导电基板电连接的贯通布线; 并且使用所述导电性基板作为第一电极，在所述第一电极的与所述绝缘部的一侧相反的一侧形成多个振动膜部，所述多个振动膜部包括与所述第一电极相对的多个间隙的第二电极， 从而形成多个单元。

    METHOD OF TREATING SEMICONDUCTOR ELEMENT
    9.
    发明申请
    METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
    处理半导体元件的方法

    公开(公告)号：US20110092016A1

    公开(公告)日：2011-04-21

    申请号：US12865032

    申请日：2009-03-02

    申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

    发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

    IPC分类号： H01L21/26 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

    摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

    摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

    Method for forming deposited film and photovoltaic element
    10.
    发明授权
    Method for forming deposited film and photovoltaic element 有权
    沉积膜和光伏元件的形成方法

    公开(公告)号：US07501305B2

    公开(公告)日：2009-03-10

    申请号：US11874352

    申请日：2007-10-18

    申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    IPC分类号： H01L21/20

    CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

    摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。