公开(公告)号：US20120012168A1

公开(公告)日：2012-01-19

申请号：US13055131

申请日：2009-01-07

申请人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

发明人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

IPC分类号： H01L31/06

CPC分类号： H01L31/1812 ,  H01L31/046 ,  H01L31/076 ,  Y02E10/548

摘要： A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.

摘要翻译： 适用于获得高转换效率的三结光伏器件的膜厚结构。 光电器件在衬底的顶部上包​​括透明电极层，包含具有针状接合部的三个层叠电池层的光电转换层和背面电极层，其中设置在光入射侧的入射部电池层具有非晶形 具有不小于100nm且不大于200nm的厚度的硅i层，设置在与光入射侧相反的一侧的底部单元层具有不具有厚度的晶体硅 - 锗i层 小于700nm且不超过1600nm，并且锗原子相对于晶体硅锗锗层内的锗原子和硅原子之和的比例不小于15原子％且不超过25原子％ 并且设置在入射部分单元层和底部单元层之间的中间单元层具有厚度不小于1000nm且不大于2,000nm的晶体硅i层。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20100116331A1

公开(公告)日：2010-05-13

申请号：US12526883

申请日：2008-02-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

IPC分类号： H01L31/00 ,  C23C14/34

CPC分类号： H01L31/076 ,  H01L31/0463 ,  Y02E10/548

摘要： A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer.

摘要翻译： 光伏器件和用于制造能够以低成本实现更高水平的性能的器件的方法。 光伏器件包括至少两个层压的光伏层，以及中间层，其设置在两个光伏层之间并且电和光学地连接两个光伏层，其中中间层的表面具有耐等离子体保护层。

公开(公告)号：US20110126903A1

公开(公告)日：2011-06-02

申请号：US13056347

申请日：2009-08-11

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Saneyuki Goya

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Saneyuki Goya

IPC分类号： H01L31/0232 ,  H01L23/48 ,  H01L31/0236

CPC分类号： H01L31/1884 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 μm and not more than 1.6 μm, the height of the ridges is not less than 0.2 μm and not more than 0.8 μm, the pitch between peaks in the fine micro-texture is not less than 0.05 μm and not more than 0.14 μm, and the height of peaks is not less than 0.02 μm and not more than 0.1 μm.

摘要翻译： 通过优化基板侧透明电极层，中间层和背面电极层的结构，能够提高提取的电流的光电转换装置。 光电器件至少包括设置在基板上的透明电极层，光电转换层和背面电极层，其中配置有光电转换层的透明电极层的表面包括由脊组成的纹理结构和微细的微细结构 纹理设置在脊的表面上，纹理结构的间距不小于1.2μm且不大于1.6μm，脊的高度不小于0.2μm且不大于0.8μm，间距之间的间距 微细纹理中的峰不小于0.05μm且不大于0.14μm，峰的高度不小于0.02μm且不大于0.1μm。

公开(公告)号：US08481848B2

公开(公告)日：2013-07-09

申请号：US12670557

申请日：2009-01-07

申请人： Saneyuki Goya ,  Eishiro Sasakawa ,  Hiroshi Mashima ,  Satoshi Sakai

发明人： Saneyuki Goya ,  Eishiro Sasakawa ,  Hiroshi Mashima ,  Satoshi Sakai

IPC分类号： H01L31/00

CPC分类号： H01L31/0236 ,  H01L31/02366 ,  H01L31/077 ,  H01L31/18 ,  Y02E10/50

摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

摘要翻译： 提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。 具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。 表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准 不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。

公开(公告)号：US20100206373A1

公开(公告)日：2010-08-19

申请号：US12670557

申请日：2009-01-07

申请人： Saneyuki Goya ,  Eishiro Sasakawa ,  Hiroshi Mashima ,  Satoshi Sakai

发明人： Saneyuki Goya ,  Eishiro Sasakawa ,  Hiroshi Mashima ,  Satoshi Sakai

IPC分类号： H01L31/00

CPC分类号： H01L31/0236 ,  H01L31/02366 ,  H01L31/077 ,  H01L31/18 ,  Y02E10/50

摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.

摘要翻译： 提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。 具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。 表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准 不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。 此外，其中形成有光电转换层3的基板1的表面的尺寸为至少1μm见方的光电器件100，其中晶体硅i层42具有表面的基板面内分布 通过不小于5且不大于8的拉曼峰比的平均值，不小于1且不大于3的拉曼峰比的标准偏差，以及拉曼峰值比的拉曼 峰值比不大于4，不小于0％且不大于10％。

公开(公告)号：US08859887B2

公开(公告)日：2014-10-14

申请号：US12997418

申请日：2009-07-08

申请人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

发明人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

IPC分类号： H01L31/105 ,  H01L31/18 ,  H01L27/142 ,  H01L31/076 ,  H01L31/077

CPC分类号： H01L27/1423 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

摘要翻译： 由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。

公开(公告)号：US20120135561A1

公开(公告)日：2012-05-31

申请号：US13388297

申请日：2010-05-07

申请人： Hiroomi Miyahara ,  Saneyuki Goya ,  Satoshi Sakai ,  Tatsuyuki Nishimiya

发明人： Hiroomi Miyahara ,  Saneyuki Goya ,  Satoshi Sakai ,  Tatsuyuki Nishimiya

IPC分类号： H01L31/18

CPC分类号： C23C16/24 ,  C23C16/4402 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

摘要翻译： 目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。 公开了一种光电转换装置的制造方法，其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。 该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层，使其具有等于或小于确定的杂质浓度的上限的值。 或者，根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限，同时在控制杂质 - 气体浓度的同时形成i层，使其具有相等的值 达到或小于确定的上限。

公开(公告)号：US20110100444A1

公开(公告)日：2011-05-05

申请号：US12997418

申请日：2009-07-08

申请人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

发明人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L27/1423 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

摘要翻译： 由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。

公开(公告)号：US20050205127A1

公开(公告)日：2005-09-22

申请号：US11028312

申请日：2005-01-04

申请人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

发明人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/00

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

摘要翻译： 通过在电绝缘透明基板上依次沉积至少第一透明电极，PIN结构或NIP结构的微晶硅层，第二透明电极和背电极来形成光电器件。 PIN结构或NIP结构的微晶硅层包括p型硅层，i型硅层和n型硅层。 第一透明电极和第二透明电极中的至少一个是掺杂有Ga的ZnO层，并且Ga相对于Zn为15原子％以下。