公开(公告)号：US20070281497A1

公开(公告)日：2007-12-06

申请号：US11751516

申请日：2007-05-21

申请人： Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'saad

发明人： Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'saad

IPC分类号： H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/022 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76832

摘要： Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.

摘要翻译： 提供了用于处理其上包含双层阻挡膜的基材的方法。 一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及紫外线固化电介质 层。 在另一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及使介电层 用电子束处理。

公开(公告)号：US20080292798A1

公开(公告)日：2008-11-27

申请号：US11765257

申请日：2007-06-19

申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

IPC分类号： B05D3/04

CPC分类号： C23C16/342 ,  C23C16/45523

摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US07323399B2

公开(公告)日：2008-01-29

申请号：US10783748

申请日：2004-02-20

申请人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

发明人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

IPC分类号： H01L21/20

CPC分类号： C23C16/26 ,  B05D1/60 ,  B05D3/068 ,  C23C16/401 ,  C23C16/56 ,  H01L21/31058 ,  H01L21/76807 ,  Y10S438/905

摘要： One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

摘要翻译： 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US20050184257A1

公开(公告)日：2005-08-25

申请号：US10784315

申请日：2004-02-20

申请人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

发明人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

IPC分类号： H01J37/304

CPC分类号： H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

摘要： One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

摘要翻译： 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：US20090162259A1

公开(公告)日：2009-06-25

申请号：US12393851

申请日：2009-02-26

申请人： Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'saad

发明人： Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'saad

IPC分类号： B01J19/08

CPC分类号： B05D3/067 ,  B05D3/0209 ,  B05D3/0493 ,  H01L21/31058

摘要： An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV sources per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV sources can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

摘要翻译： 紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV源被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV源可以是利用诸如微波或射频之类的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

公开(公告)号：US07371427B2

公开(公告)日：2008-05-13

申请号：US10442579

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： B08B9/00 ,  B05D7/22

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20080075888A1

公开(公告)日：2008-03-27

申请号：US11876680

申请日：2007-10-22

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H05H1/24

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20080044594A1

公开(公告)日：2008-02-21

申请号：US11877560

申请日：2007-10-23

申请人： Francimar Schmitt ,  Hichem M'saad

发明人： Francimar Schmitt ,  Hichem M'saad

IPC分类号： H05H1/24

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

摘要翻译： 介电常数约为3.2以下，优选为3.0以下的低介电常数膜的制造方法包括向基板表面提供具有至少一个不饱和碳 - 碳键的环状有机硅氧烷和线性烃化合物。 一方面，环状有机硅氧烷和直链烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下进行反应。 优选地，低介电常数膜具有压应力。

公开(公告)号：US20080041415A1

公开(公告)日：2008-02-21

申请号：US11925611

申请日：2007-10-26

申请人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

发明人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

IPC分类号： B08B6/00

CPC分类号： B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

摘要： One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

摘要翻译： 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。