公开(公告)号：US20060272772A1

公开(公告)日：2006-12-07

申请号：US11425974

申请日：2006-06-22

申请人： Amir Al-Bayati ,  Lester D'Cruz ,  Alexandros Demos ,  Dale Dubois ,  Khaled Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

发明人： Amir Al-Bayati ,  Lester D'Cruz ,  Alexandros Demos ,  Dale Dubois ,  Khaled Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01J37/317 ,  B23K15/00 ,  C23F4/00 ,  H01J37/026 ,  H01J37/20 ,  H01J2237/004 ,  H01J2237/0044 ,  H01J2237/2001 ,  H01J2237/304 ,  H01J2237/3156 ,  H01J2237/316 ,  H01J2237/3165 ,  H01L21/67115

摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

摘要翻译： 提供了用于基板的电子束处理的方法和装置。 提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20050224722A1

公开(公告)日：2005-10-13

申请号：US11002600

申请日：2004-12-01

申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J2237/0041

摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20060289795A1

公开(公告)日：2006-12-28

申请号：US11383383

申请日：2006-05-15

申请人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

发明人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

IPC分类号： G21G5/00

CPC分类号： H01J37/317 ,  H01J2237/2001

摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

摘要翻译： 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20060192150A1

公开(公告)日：2006-08-31

申请号：US11414649

申请日：2006-04-27

申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/317 ,  H01J2237/0041

摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20050233591A1

公开(公告)日：2005-10-20

申请号：US11046090

申请日：2005-01-28

申请人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

发明人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

IPC分类号： B44C1/22 ,  C23C16/40 ,  C23C16/56 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2/2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

公开(公告)号：US20050184257A1

公开(公告)日：2005-08-25

申请号：US10784315

申请日：2004-02-20

申请人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

发明人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

IPC分类号： H01J37/304

CPC分类号： H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

摘要： One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

摘要翻译： 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：US06878644B2

公开(公告)日：2005-04-12

申请号：US10430942

申请日：2003-05-06

申请人： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

发明人： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

IPC分类号： H01L21/3105 ,  H01L21/762 ,  H01L21/31 ,  H01L21/461 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/3105

摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

摘要翻译： 一种填充蚀刻在衬底中的多个沟槽的方法。 在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层 ，其中第二温度大于第一温度。 该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。