公开(公告)号：US20120114002A1

公开(公告)日：2012-05-10

申请号：US13294378

申请日：2011-11-11

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01S5/32 ,  H01L33/02

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/2009 ,  H01S5/34333

摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

摘要翻译： 提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。 生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。 在n型包覆层上生长GaN光引导层以使其晶格弛豫。 生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。 生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。 生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。 交界处的位错密度大于其他路口的位错密度。

公开(公告)号：US20110180805A1

公开(公告)日：2011-07-28

申请号：US12836144

申请日：2010-07-14

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸， 氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。 预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20110057167A1

公开(公告)日：2011-03-10

申请号：US12947431

申请日：2010-11-16

申请人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/26 ,  H01L33/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

摘要翻译： 在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。 倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。 氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。 阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向， 类型层到n型层。 因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

公开(公告)号：US20100230690A1

公开(公告)日：2010-09-16

申请号：US12714049

申请日：2010-02-26

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L29/205

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。 在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。 氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

公开(公告)号：US20110058585A1

公开(公告)日：2011-03-10

申请号：US12846361

申请日：2010-07-29

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/323 ,  H01L33/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.

摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

公开(公告)号：US20120088326A1

公开(公告)日：2012-04-12

申请号：US13277806

申请日：2011-10-20

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US20110042644A2

公开(公告)日：2011-02-24

申请号：US12752647

申请日：2010-04-01

申请人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

公开(公告)号：US20100276663A1

公开(公告)日：2010-11-04

申请号：US12819016

申请日：2010-06-18

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/30 ,  H01L33/00 ,  C30B25/10

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333

摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.

摘要翻译： 在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜 第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。 在GaN基半导体外延区域15上，设置有源层17。 有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。 半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。 这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

公开(公告)号：US20120086015A1

公开(公告)日：2012-04-12

申请号：US13243516

申请日：2011-09-23

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L29/20

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US20110057200A1

公开(公告)日：2011-03-10

申请号：US12940879

申请日：2010-11-05

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L29/207

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.