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公开(公告)号：US20110094995A1
公开(公告)日：2011-04-28
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： C23F1/08 , C23C16/455 , C23C16/458 , C23C16/505 , C23F1/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译： 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。
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公开(公告)号：US09313872B2
公开(公告)日：2016-04-12
申请号：US12913441
申请日：2010-10-27
IPC分类号： C23C16/00 , H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。
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公开(公告)号：US09253867B2
公开(公告)日：2016-02-02
申请号：US12913183
申请日：2010-10-27
IPC分类号： H01L21/306 , C23C16/00 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
摘要： A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。
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公开(公告)号：US08741097B2
公开(公告)日：2014-06-03
申请号：US12913162
申请日：2010-10-27
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。
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公开(公告)号：US08608903B2
公开(公告)日：2013-12-17
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译： 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。
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公开(公告)号：US20110104902A1
公开(公告)日：2011-05-05
申请号：US12913441
申请日：2010-10-27
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/30 , C23C14/34
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。
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公开(公告)号：US20110094997A1
公开(公告)日：2011-04-28
申请号：US12913183
申请日：2010-10-27
IPC分类号： C23F1/08 , C23C16/505 , H05H1/24 , C23F1/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
摘要： A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit;and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。
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公开(公告)号：US08137471B2
公开(公告)日：2012-03-20
申请号：US12696323
申请日：2010-01-29
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。
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公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。
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公开(公告)号：US08790490B2
公开(公告)日：2014-07-29
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。
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