公开(公告)号：US06789305B2

公开(公告)日：2004-09-14

申请号：US10680131

申请日：2003-10-08

申请人： Yoichi Seki ,  Taro Hasegawa

发明人： Yoichi Seki ,  Taro Hasegawa

IPC分类号： H02K1516

CPC分类号： H02K41/031 ,  H02K3/24 ,  Y10T29/49009 ,  Y10T29/49071 ,  Y10T29/49073

摘要： In a linear motor coil assembly (12), and a method for manufacturing the same, a plurality of coils (14) are arranged in a line in a direction of movement and have respective coil axes perpendicular to the direction of movement of the motor. A flat cooling tube (20) is arranged to meander inside the plurality of coils. The cooling tube has a cross section elongated in a direction parallel to the coil axes, and a plurality of clearance holes (25) through which coolant flows are formed inside the cooling tube. The cooling tube has interleaved folds at least equal in number to the number of coils. The coils being fitted into these folds. At the time of manufacture of the coil assembly, the coils are wound around cores that are divided for each coil, and the cores are inserted into the folds of the cooling tube.

摘要翻译： 在线性电动机线圈组件（12）及其制造方法中，多个线圈（14）沿着移动方向一行排列，并且具有与电动机的运动方向垂直的各线圈轴。 扁平冷却管（20）布置成在多个线圈内弯曲。 冷却管具有沿与线圈轴平行的方向伸长的横截面，并且在冷却管内部形成有多个冷却剂流过的间隙孔（25）。 冷却管具有与线圈数目至少相等的交错折叠。 线圈安装在这些折叠中。 在制造线圈组件时，线圈缠绕在每个线圈分开的芯上，并且芯被插入到冷却管的折叠部中。

公开(公告)号：US06661124B1

公开(公告)日：2003-12-09

申请号：US09830409

申请日：2001-04-27

申请人： Yoichi Seki ,  Taro Hasegawa

发明人： Yoichi Seki ,  Taro Hasegawa

IPC分类号： H02K900

CPC分类号： H02K41/031 ,  H02K3/24 ,  Y10T29/49009 ,  Y10T29/49071 ,  Y10T29/49073

摘要： In a linear motor coil assembly (12), and a method for manufacturing the same, a plurality of coils (14) are arranged in a line in a direction of movement and have respective coil axes perpendicular to the direction of movement of the motor. A flat cooling tube (20) is arranged to meander inside the plurality of coils. The cooling tube has a cross section elongated in a direction parallel to the coil axes, and a plurality of clearance holes (25) through which coolant flows are formed inside the cooling tube. The cooling tube has interleaved folds at least equal in number to the number of coils. The coils being fitted into these folds. At the time of manufacture of the coil assembly, the coils are wound around cores that are divided for each coil, and the cores are inserted into the folds of the cooling tube.

摘要翻译： 在线性电动机线圈组件（12）及其制造方法中，多个线圈（14）沿着移动方向一行排列，并且具有与电动机的运动方向垂直的各线圈轴。 扁平冷却管（20）布置成在多个线圈内弯曲。 冷却管具有沿与线圈轴平行的方向伸长的横截面，并且在冷却管内部形成有多个冷却剂流过的间隙孔（25）。 冷却管具有与线圈数目至少相等的交错折叠。 线圈安装在这些折叠中。 在制造线圈组件时，线圈缠绕在每个线圈分开的芯上，并且芯被插入到冷却管的折叠部中。

公开(公告)号：US08798110B2

公开(公告)日：2014-08-05

申请号：US13094117

申请日：2011-04-26

申请人： Tatsuya Takeuchi ,  Taro Hasegawa

发明人： Tatsuya Takeuchi ,  Taro Hasegawa

IPC分类号： H01S5/00

CPC分类号： H01S5/20 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3013

摘要： A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

摘要翻译： 一种制造光半导体器件的方法，包括：在第一导电型半导体衬底上形成包括第一导电型包覆层，有源层和第二导电型包覆层的台面结构，台面的最上表面 结构由第二导电型包层的上表面构成; 生长的第一个埋藏层在比活性层更高的位置掩埋台面结构的两侧; 通过蚀刻第二导电型包覆层的上表面的两个边缘来形成凹陷面; 以及在所述第二导电型包覆层和所述第一掩埋层的凹面上生长所述第一导电类型的第二掩埋层。

公开(公告)号：US08276489B2

公开(公告)日：2012-10-02

申请号：US11993000

申请日：2007-02-27

申请人： Ichiro Araie ,  Shuichi Kawada ,  Taro Hasegawa

发明人： Ichiro Araie ,  Shuichi Kawada ,  Taro Hasegawa

IPC分类号： B23H7/26

CPC分类号： B23H7/265 ,  B23H7/26 ,  B23H7/28 ,  B23H2400/10 ,  B23Q1/0009 ,  Y10T82/2552 ,  Y10T82/2561 ,  Y10T82/2562 ,  Y10T82/266

摘要： A spindle apparatus includes a rotatable first spindle (5, 32) to which a tool can be attached. The first spindle is supported in a base with high precision using an air hydrostatic bearing. The spindle apparatus further includes a second spindle (6, 33) capable of rotation about an axis substantially aligned with the axis of the first spindle, first connection means for electrically connecting a base side and the second spindle, and second connection means for electrically connecting the first spindle and the second spindle. Electrical connection between the base side and the first spindle is carried out via the first and second connection means. The first connection means is, for example, a brush (15, 36). The second connection means has a degree of mechanical freedom and is, for example, a flexible electrical wire (17, 39) or a helical spring (51).

摘要翻译： 主轴装置包括可旋转的第一主轴（5,32），工具可以附接到该主轴。 使用空气静压轴承，第一个主轴以高精度支撑在基座中。 所述主轴装置还包括能够围绕基本上与所述第一主轴的轴线对准的轴线旋转的第二主轴（6,33），用于电连接基座侧和所述第二主轴的第一连接装置，以及用于电连接 第一主轴和第二主轴。 通过第一和第二连接装置执行基座侧和第一主轴之间的电连接。 第一连接装置是例如刷子（15,36）。 第二连接装置具有机械自由度，例如是柔性电线（17,39）或螺旋弹簧（51）。

公开(公告)号：US20090133546A1

公开(公告)日：2009-05-28

申请号：US11993000

申请日：2007-02-27

申请人： Ichiro Araie ,  Shuichi Kawada ,  Taro Hasegawa

发明人： Ichiro Araie ,  Shuichi Kawada ,  Taro Hasegawa

IPC分类号： B23B19/02

CPC分类号： B23H7/265 ,  B23H7/26 ,  B23H7/28 ,  B23H2400/10 ,  B23Q1/0009 ,  Y10T82/2552 ,  Y10T82/2561 ,  Y10T82/2562 ,  Y10T82/266

摘要： A spindle apparatus includes a rotatable first spindle (5, 32) to which a tool can be attached. The first spindle is supported in a base with high precision using an air hydrostatic bearing. The spindle apparatus further includes a second spindle (6, 33) capable of rotation about an axis substantially aligned with the axis of the first spindle, first connection means for electrically connecting a base side and the second spindle, and second connection means for electrically connecting the first spindle and the second spindle. Electrical connection between the base side and the first spindle is carried out via the first and second connection means. The first connection means is, for example, a brush (15, 36). The second connection means has a degree of mechanical freedom and is, for example, a flexible electrical wire (17, 39) or a helical spring (51).

摘要翻译： 主轴装置包括可旋转的第一主轴（5,32），工具可以附接到该主轴。 使用空气静压轴承，第一个主轴以高精度支撑在基座中。 所述主轴装置还包括能够围绕基本上与所述第一主轴的轴线对准的轴线旋转的第二主轴（6,33），用于电连接基座侧和所述第二主轴的第一连接装置，以及用于电连接 第一主轴和第二主轴。 通过第一和第二连接装置执行基座侧和第一主轴之间的电连接。 第一连接装置是例如刷子（15,36）。 第二连接装置具有机械自由度，例如是柔性电线（17,39）或螺旋弹簧（51）。

公开(公告)号：US20110261855A1

公开(公告)日：2011-10-27

申请号：US13094117

申请日：2011-04-26

申请人： Tatsuya Takeuchi ,  Taro Hasegawa

发明人： Tatsuya Takeuchi ,  Taro Hasegawa

IPC分类号： H01S5/227 ,  H01L21/20 ,  B82Y40/00

CPC分类号： H01S5/20 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3013

摘要： A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

摘要翻译： 一种制造光半导体器件的方法，包括：在第一导电型半导体衬底上形成包括第一导电型包覆层，有源层和第二导电型包覆层的台面结构，台面的最上表面 结构由第二导电型包层的上表面构成; 生长的第一个埋藏层在比活性层更高的位置掩埋台面结构的两侧; 通过蚀刻第二导电型包覆层的上表面的两个边缘来形成凹陷面; 以及在所述第二导电型包覆层和所述第一掩埋层的凹面上生长所述第一导电类型的第二掩埋层。

公开(公告)号：US07303933B2

公开(公告)日：2007-12-04

申请号：US11155474

申请日：2005-06-20

申请人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

发明人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

IPC分类号： H01L21/00

CPC分类号： H01L21/30617 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/3235

摘要： A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

摘要翻译： 制造半导体器件的方法包括以下步骤：形成包含In并且具有不同于InP的组成的第一III-V族化合物半导体层和包含In的第二III-V化合物半导体层的叠层结构。 在第一III-V族化合物半导体层上形成第二III-V族化合物半导体层，并在邻近堆叠结构的区域生长InP层，以形成InP的阶梯状结构。 该方法还包括使用含有盐酸和乙酸的蚀刻剂来湿式蚀刻阶梯结构和第二III-V化合物半导体层以去除至少第二III-V族化合物半导体层的步骤。

公开(公告)号：US20050245089A1

公开(公告)日：2005-11-03

申请号：US11155474

申请日：2005-06-20

申请人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

发明人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

IPC分类号： H01S5/042 ,  H01L21/306 ,  H01S5/20 ,  H01S5/227 ,  H01L21/302

CPC分类号： H01L21/30617 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/3235

摘要： A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

公开(公告)号：US06501090B2

公开(公告)日：2002-12-31

申请号：US10044979

申请日：2002-01-15

申请人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

发明人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

摘要： In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is &thgr;4, relationships &thgr;1 &thgr;3, &thgr;3

摘要翻译： 在S3型半导体激光器中，当第一生长曲线与第一主平面的角度为第一生长曲线时，连接第一生长轮廓线的第一生长曲线和第一生长曲线 导电型包层为θ1，第二生长曲线与第一主平面的角度，第二生长曲线，连接第一导电类型的第二层的上倾斜面和下倾斜面的下侧线 包层是θ2，第三生长轮廓线与第一主平面的角度，第三生长轮廓线连接第一导电型包层的第三层的上倾斜平面和下倾斜平面的下侧线 是θ3，以及第四生长曲线与第一主平面的角度，第四生长曲线连接着上部的各个下边线 r倾斜面和第一导电型包层的第四层的下倾斜面是θ4，可以满足关系θ1，θ2，θ3，θ3。

公开(公告)号：US07919415B2

公开(公告)日：2011-04-05

申请号：US11976779

申请日：2007-10-29

申请人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

发明人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

IPC分类号： H01L21/302

CPC分类号： H01L21/30617 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/3235

摘要： A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

摘要翻译： 制造半导体器件的方法包括以下步骤：形成包含In并且具有不同于InP的组成的第一III-V族化合物半导体层和包含In的第二III-V化合物半导体层的叠层结构。 在第一III-V族化合物半导体层上形成第二III-V族化合物半导体层，并在邻近堆叠结构的区域生长InP层，以形成InP的阶梯状结构。 该方法还包括使用含有盐酸和乙酸的蚀刻剂来湿式蚀刻阶梯结构和第二III-V化合物半导体层以去除至少第二III-V族化合物半导体层的步骤。