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    Semiconductor laser and method of manufacturing the same
    1.
    发明授权
    Semiconductor laser and method of manufacturing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US06501090B2

    公开(公告)日：2002-12-31

    申请号：US10044979

    申请日：2002-01-15

    申请人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

    发明人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

    摘要： In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is &thgr;4, relationships &thgr;1 &thgr;3, &thgr;3

    摘要翻译： 在S3型半导体激光器中，当第一生长曲线与第一主平面的角度为第一生长曲线时，连接第一生长轮廓线的第一生长曲线和第一生长曲线 导电型包层为θ1，第二生长曲线与第一主平面的角度，第二生长曲线，连接第一导电类型的第二层的上倾斜面和下倾斜面的下侧线 包层是θ2，第三生长轮廓线与第一主平面的角度，第三生长轮廓线连接第一导电型包层的第三层的上倾斜平面和下倾斜平面的下侧线 是θ3，以及第四生长曲线与第一主平面的角度，第四生长曲线连接着上部的各个下边线 r倾斜面和第一导电型包层的第四层的下倾斜面是θ4，可以满足关系θ1，θ2，θ3，θ3。

    Compound semiconductor device manufacturing method
    2.
    发明授权
    Compound semiconductor device manufacturing method 失效
    复合半导体器件的制造方法

    公开(公告)号：US06686217B2

    公开(公告)日：2004-02-03

    申请号：US10046217

    申请日：2002-01-16

    申请人： Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

    发明人： Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

    IPC分类号： H01L2100

    CPC分类号： H01L21/2258 ,  H01S5/162

    摘要： A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO2 film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

    摘要翻译： 一种形成化合物半导体器件的方法。 该方法包括以下步骤：将化合物半导体层上含有氧化锌和氧化硅的膜含有70重量％以上作为扩散源，通过退火将锌从扩散源扩散到化合物半导体层中 。 因此，可以提供一种化合物半导体器件制造方法，其包括将锌扩散到化合物半导体层中的步骤，能够使ZnO扩散位置从ZnO / SiO 2膜深化到激光端面窗结构的COD耐久性 而不是现有技术。

    Semiconductor laser having double heterostructure
    8.
    发明授权
    Semiconductor laser having double heterostructure 失效
    半导体激光器具有双异质结构

    公开(公告)号：US5255281A

    公开(公告)日：1993-10-19

    申请号：US996802

    申请日：1992-12-24

    申请人： Mami Sugano ,  Akira Furuya ,  Toshiyuki Tanahashi ,  Makoto Kondo ,  Chikashi Anayama

    发明人： Mami Sugano ,  Akira Furuya ,  Toshiyuki Tanahashi ,  Makoto Kondo ,  Chikashi Anayama

    IPC分类号： H01L33/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01L33/0062 ,  H01S5/10 ,  H01S5/16 ,  H01S5/2232 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2235 ,  H01S5/2272 ,  H01S5/3211 ,  H01S5/32391

    摘要： A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.

    摘要翻译： 半导体激光器包括具有（100）面作为其主表面的衬底，其中衬底具有在衬底的<110>方向上延伸的第一台面的条纹，并且包括（111）B面作为其倾斜表面， 形成在所述基板上的掩埋层，除了所述第一台面的所述条纹的顶表面，使得所述第一台面的所述条纹的（111）B面被所述掩埋层的倾斜表面部分覆盖， 第一台面的条纹是基板的（100）面，并与掩埋层的倾斜表面一起形成第二台面的条纹，并且第二台面的条带具有比第一台面的条纹更小的倾斜度， 以及由多个半导体层构成并形成在第二台面的条上的双异质结构。 双异质结构具有基本上梯形的横截面，其由第二台面的条纹确定。

    Semiconductor photodetection device and fabrication process thereof
    10.
    发明授权
    Semiconductor photodetection device and fabrication process thereof 失效
    半导体光电检测装置及其制造方法

    公开(公告)号：US07081639B2

    公开(公告)日：2006-07-25

    申请号：US09873264

    申请日：2001-06-05

    申请人： Toru Uchida ,  Chikashi Anayama

    发明人： Toru Uchida ,  Chikashi Anayama

    IPC分类号： H01L31/0304

    CPC分类号： B82Y20/00 ,  H01L31/03046 ,  H01L31/035263 ,  H01L31/105 ,  Y02E10/544

    摘要： A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.

    摘要翻译： 半导体光电检测装置包括由在其中蓄积压缩应变的光吸收层和在其中累积补偿拉伸应变的应力补偿层的交替重复堆叠形成的光电检测层，其中光吸收层的厚度大于厚度 的应力补偿层。