公开(公告)号：US20130056823A1

公开(公告)日：2013-03-07

申请号：US13603045

申请日：2012-09-04

申请人： Yoonjae Kim ,  Nam-Gun Kim ,  Chulho Shin ,  Chan Min Lee

发明人： Yoonjae Kim ,  Nam-Gun Kim ,  Chulho Shin ,  Chan Min Lee

IPC分类号： H01L29/78

CPC分类号： H01L27/10885 ,  H01L27/10894 ,  H01L27/10897

摘要： A device isolation layer is formed in a substrate to define spaced-apart linear active regions in the substrate. Buried gate patterns are formed in the substrate and extending along a first direction to cross the active regions. An etch stop layer and a first insulating layer are formed on the substrate. Bit line structures are formed on the first insulating layer and extending along a second direction transverse to the first direction to cross the active regions. A second insulating layer is formed on the bit line structures. Contact plugs are formed penetrating the second insulating layer, the first insulating layer, and the etch stop layer to contact one of the active regions between adjacent ones of the bit line structures.

摘要翻译： 在衬底中形成器件隔离层，以在衬底中限定间隔开的线性有源区。 掩埋栅极图案形成在衬底中并且沿着第一方向延伸以跨过有源区域。 在基板上形成蚀刻停止层和第一绝缘层。 位线结构形成在第一绝缘层上并且沿着横向于第一方向的第二方向延伸以穿过有源区。 在位线结构上形成第二绝缘层。 穿过第二绝缘层，第一绝缘层和蚀刻停止层的接触插塞接触相邻的位线结构中的一个有源区。

公开(公告)号：US09012326B2

公开(公告)日：2015-04-21

申请号：US13087208

申请日：2011-04-14

申请人： Nam-Gun Kim ,  Yoonjae Kim ,  Sungil Cho

发明人： Nam-Gun Kim ,  Yoonjae Kim ,  Sungil Cho

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L27/108 ,  H01L27/22 ,  H01L49/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L27/102 ,  H01L27/115 ,  H01L27/24 ,  H01L45/00

CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L27/1021 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10882 ,  H01L27/10894 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/224 ,  H01L27/24 ,  H01L27/2409 ,  H01L28/91 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/785 ,  H01L45/04 ,  H01L45/06 ,  H01L45/10 ,  H01L45/141 ,  H01L45/145

摘要： A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in the plurality of spaced apart trenches to define upper openings in the plurality of spaced apart trenches; and patterning the lower layer using the first and second sacrificial layers as a mask to form lower openings in the lower layer.

摘要翻译： 可以通过在下层上形成第一牺牲层来图案化微电子器件的下层; 在所述第一牺牲层中图形化多个间隔开的沟槽; 在所述多个间隔开的沟槽中形成第二牺牲层; 在所述多个间隔开的沟槽中图案化所述第二牺牲层以限定所述多个间隔开的沟槽中的上部开口; 并且使用第一和第二牺牲层作为掩模来图案化下层，以在下层中形成下部开口。

公开(公告)号：US20120040528A1

公开(公告)日：2012-02-16

申请号：US13087208

申请日：2011-04-14

申请人： Nam-Gun Kim ,  Yoonjae Kim ,  Sungil Cho

发明人： Nam-Gun Kim ,  Yoonjae Kim ,  Sungil Cho

IPC分类号： H01L21/308 ,  H01L21/768

CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L27/1021 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10882 ,  H01L27/10894 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/224 ,  H01L27/24 ,  H01L27/2409 ,  H01L28/91 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/785 ,  H01L45/04 ,  H01L45/06 ,  H01L45/10 ,  H01L45/141 ,  H01L45/145

摘要： A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in the plurality of spaced apart trenches to define upper openings in the plurality of spaced apart trenches; and patterning the lower layer using the first and second sacrificial layers as a mask to form lower openings in the lower layer.

摘要翻译： 可以通过在下层上形成第一牺牲层来图案化微电子器件的下层; 在所述第一牺牲层中图形化多个间隔开的沟槽; 在所述多个间隔开的沟槽中形成第二牺牲层; 在所述多个间隔开的沟槽中图案化所述第二牺牲层以限定所述多个间隔开的沟槽中的上开口; 并且使用第一和第二牺牲层作为掩模来图案化下层，以在下层中形成下部开口。

公开(公告)号：US20160104671A1

公开(公告)日：2016-04-14

申请号：US14970160

申请日：2015-12-15

申请人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

发明人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

IPC分类号： H01L23/528 ,  H01L23/535 ,  H01L29/06 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L23/528 ,  H01L23/535 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/10897 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/45 ,  H01L29/78 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.

公开(公告)号：US20110183512A1

公开(公告)日：2011-07-28

申请号：US12793843

申请日：2010-06-04

申请人： Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

发明人： Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

IPC分类号： H01L21/768

CPC分类号： H01L23/485 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L27/10814 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.

摘要翻译： 形成半导体器件的方法包括在衬底上形成下导电图案，在下导电图案上形成绝缘层，形成通过绝缘层的接触孔，露出下导电图案，沿着第 接触孔，然后在接触孔中形成接触塞。 接触塞形成为接触下导电图案。

公开(公告)号：US07898564B2

公开(公告)日：2011-03-01

申请号：US11577656

申请日：2005-09-27

申请人： Nam-Gun Kim ,  Hyun-Wook Kim ,  Goon-don Choi ,  Chang-Moon Han

发明人： Nam-Gun Kim ,  Hyun-Wook Kim ,  Goon-don Choi ,  Chang-Moon Han

IPC分类号： H04N7/14

CPC分类号： H04N7/14 ,  H04L65/1009 ,  H04L65/1069 ,  H04L65/1089 ,  H04L69/24 ,  H04N7/147 ,  H04W76/12 ,  H04W92/18

摘要： The video telephony service method includes the step of the mobile communication system, which stores profile information, setting up a call between culling and called mobile communication terminals; the step of the mobile communication system transmitting the profile information of the calling mobile communication terminal to the called mobile communication terminal, as the calling mobile communication terminal transmits the profile information thereof to the mobile communication system; the step of the called mobile communication terminal consulting the profile information, and transmitting a response signal to the mobile communication system after establishing conditions for video telephony if it is determined that video telephony is possible for a received profile, and the mobile communication system transmitting the response signal to the calling mobile communication terminal; and the step of the mobile communication system establishing a communication path between the calling and called mobile communication terminals.

摘要翻译： 视频电话服务方法包括存储简档信息的移动通信系统的步骤，在剔除和被叫移动通信终端之间建立呼叫; 移动通信系统将主叫移动通信终端的简档信息发送到被叫移动通信终端的步骤，作为主叫移动通信终端将其简档信息发送到移动通信系统; 所述被叫移动通信终端的步骤咨询简档信息，并且如果确定视频电话对于所接收的简档是可能的，则在为视频电话建立条件之后向移动通信系统发送响应信号，并且移动通信系统发送 响应信号到呼叫移动通信终端; 以及移动通信系统在呼叫和被叫移动通信终端之间建立通信路径的步骤。

公开(公告)号：US07848754B2

公开(公告)日：2010-12-07

申请号：US11576271

申请日：2005-01-05

申请人： Hyun-Wook Kim ,  Young-Lak Kim ,  Nam-Gun Kim ,  Jong-Tae Ihm

发明人： Hyun-Wook Kim ,  Young-Lak Kim ,  Nam-Gun Kim ,  Jong-Tae Ihm

IPC分类号： H04W36/00 ,  H04W4/00 ,  H04M1/00

CPC分类号： H04B1/005 ,  H04B1/38

摘要： The present invention relates to a dual band/dual mode mobile communication terminal, which can perform stable roaming between synchronous and asynchronous mobile communication networks. The mobile communication terminal of the present invention includes an antenna (410), an asynchronous RF device (420), a synchronous RF device (430), and a common module (440). The antenna (410) transmits/receives radio waves to/from an asynchronous mobile communication network (100) and a synchronous mobile communication network (200). The asynchronous RF device (420) performs asynchronous communication with the asynchronous mobile communication network (100) through the antenna (410). The synchronous RF device (430) performs synchronous communication with the synchronous mobile communication network (200) through the antenna (410). The common module (440) provides common resources at the time of wirelessly communicating with the synchronous and asynchronous mobile communication networks through the synchronous and asynchronous RF devices.

摘要翻译： 双频/双模移动通信终端技术领域本发明涉及一种能够在同步和异步移动通信网络之间进行稳定漫游的双频/双模移动通信终端。 本发明的移动通信终端包括天线（410），异步RF设备（420），同步RF设备（430）和公共模块（440）。 天线（410）向/从异步移动通信网络（100）和同步移动通信网络（200）发送/接收无线电波。 异步RF设备（420）通过天线（410）与异步移动通信网络（100）执行异步通信。 同步RF设备（430）通过天线（410）与同步移动通信网络（200）进行同步通信。 公共模块（440）在通过同步和异步RF设备与同步和异步移动通信网络进行无线通信时提供公共资源。

公开(公告)号：US20080161039A1

公开(公告)日：2008-07-03

申请号：US11576271

申请日：2005-01-05

申请人： Hyun-Wook Kim ,  Young-Lak Kim ,  Nam-Gun Kim ,  Jong-Tae Ihm

发明人： Hyun-Wook Kim ,  Young-Lak Kim ,  Nam-Gun Kim ,  Jong-Tae Ihm

IPC分类号： H04B1/40

CPC分类号： H04B1/005 ,  H04B1/38

摘要： The present invention relates to a dual band/dual mode mobile communication terminal, which can perform stable roaming between synchronous and asynchronous mobile communication networks. The mobile communication terminal of the present invention includes an antenna (410), an asynchronous RF device (420), a synchronous RF device (430), and a common module (440). The antenna (410) transmits/receives radio waves to/from an asynchronous mobile communication network (100) and a synchronous mobile communication network (200). The asynchronous RF device (420) performs asynchronous communication with the asynchronous mobile communication network (100) through the antenna (410). The synchronous RF device (430) performs synchronous communication with the synchronous mobile communication network (200) through the antenna (410). The common module (440) provides common resources at the time of wirelessly communicating with the synchronous and asynchronous mobile communication networks through the synchronous and asynchronous RF devices.

摘要翻译： 双频/双模移动通信终端技术领域本发明涉及一种能够在同步和异步移动通信网络之间进行稳定漫游的双频/双模移动通信终端。 本发明的移动通信终端包括天线（410），异步RF设备（420），同步RF设备（430）和公共模块（440）。 天线（410）向/从异步移动通信网络（100）和同步移动通信网络（200）发送/接收无线电波。 异步RF设备（420）通过天线（410）与异步移动通信网络（100）执行异步通信。 同步RF设备（430）通过天线（410）与同步移动通信网络（200）进行同步通信。 公共模块（440）在通过同步和异步RF设备与同步和异步移动通信网络进行无线通信时提供公共资源。

公开(公告)号：US20070280160A1

公开(公告)日：2007-12-06

申请号：US10591822

申请日：2005-03-04

申请人： Nam-Gun Kim ,  Young-Lak Kim ,  Hyun-Wook Kim ,  Chan-Moon Han

发明人： Nam-Gun Kim ,  Young-Lak Kim ,  Hyun-Wook Kim ,  Chan-Moon Han

IPC分类号： H04Q7/00

CPC分类号： H04W36/18 ,  H04B7/195 ,  H04W36/14 ,  H04W36/30 ,  H04W36/36 ,  H04W88/06

摘要： Disclosed is a multi-mode multi-band mobile communication terminal and a mode switching method thereof wherein a mode switching can be performed between an asynchronous network and a synchronous network by minimizing interruption in communication. According to the switching method of a multi-mode multi-band mobile communication terminal, the power of a signal received from an asynchronous network or a synchronous network is measured and the measured power of the received signal drives a modem portion, thereby switching the mode of the mobile communication terminal.

摘要翻译： 公开了一种多模式多频带移动通信终端及其模式切换方法，其中可以通过最小化通信中断来在异步网络和同步网络之间执行模式切换。 根据多模式多频带移动通信终端的切换方法，测量从异步网络或同步网络接收的信号的功率，并且测量的接收信号的功率驱动调制解调器部分，从而切换模式 的移动通信终端。

公开(公告)号：US09231104B2

公开(公告)日：2016-01-05

申请号：US14527450

申请日：2014-10-29

申请人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

发明人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/78 ,  H01L29/423 ,  H01L27/105 ,  H01L29/45 ,  H01L27/108

CPC分类号： H01L23/528 ,  H01L23/535 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/10897 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/45 ,  H01L29/78 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.

摘要翻译： 具有单元区域和周边区域的半导体器件包括半导体基板，限定单元区域中的半导体基板的单元有源区域的单元绝缘隔离区域，设置在单元区域中的半导体基板内的字线，位 设置在单元有源区上的线接触插塞，位线接触插头上的位线，限定周边区域中的半导体衬底的周边有源区域的外围绝缘隔离区域以及包括周边晶体管下电极的外围晶体管 和周边晶体管上电极。 位线接触插塞形成在半导体器件中与外围晶体管下电极相同的电平上，并且位线电极在半导体器件中形成为与外围晶体管上电极相同的电平。