Semiconductor device having supply voltage deboosting circuit
    1.
    发明授权
    Semiconductor device having supply voltage deboosting circuit 失效
    具有电源电压去抖动电路的半导体器件

    公开(公告)号:US5627493A

    公开(公告)日:1997-05-06

    申请号:US519249

    申请日:1995-08-25

    CPC分类号: G05F1/465 G11C5/147

    摘要: The semiconductor device comprises: an internal supply voltage deboosting circuit for inputting an external supply voltage, deboosting the inputted external supply voltage, and outputting a deboosted voltage as an internal supply voltage; a first control circuit for deactivating the internal supply voltage deboosting circuit when the external supply voltage is lower than a predetermined value; and a second control circuit for outputting the external supply voltage as the internal supply voltage when the external supply voltage is lower than the predetermined value. When the external supply voltage is lower than a predetermined value, since the internal supply voltage deboosting circuit is deactivated by the first control circuit, the current consumption can be reduced. Further, since the external supply voltage is outputted as the internal supply voltage by the second control circuit, the deboosting operation is not required. The device is usable for different external supply voltages in spite of the same circuit configuration, while preventing the operational margin from being deteriorated.

    摘要翻译: 半导体器件包括:用于输入外部电源电压的内部电源电压去抖动电路,去除所输入的外部电源电压,并输出去激发的电压作为内部电源电压; 第一控制电路,用于当所述外部电源电压低于预定值时停止所述内部电源电压去抖动电路; 以及第二控制电路,用于当外部电源电压低于预定值时输出外部电源电压作为内部电源电压。 当外部电源电压低于预定值时,由于内部电源电压去保护电路被第一控制电路停用,所以可以减少电流消耗。 此外,由于通过第二控制电路输出外部电源电压作为内部电源电压,因此不需要去抖动操作。 尽管有相同的电路配置,该器件可用于不同的外部电源电压,同时防止操作裕度恶化。

    Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5640355A

    公开(公告)日:1997-06-17

    申请号:US471507

    申请日:1995-06-06

    CPC分类号: G11C7/065 G11C7/12

    摘要: A semiconductor memory device including a memory cell array, bit lines, and sense amplifier groups. The memory cell array is composed of a plurality of memory cells arranged roughly in a matrix pattern. A plurality of the memory cells arranged in a row are activated in response to a row address decode signal. A pair of the bit lines are provided for each column. The data of the corresponding activated memory cells are transmitted to the bit line pair. Each of the sense amplifier groups has n-units of sense amplifiers each connected to the bit line pair, to sense and amplify data read to the bit line pair connected thereto. The respective reference potential terminals of the sense amplifiers of each of the sense amplifier groups are connected to a single common node which can be connected to a reference potential via a sense amplifier activating transistor turned on in response to a row address signal. The sense amplifiers can be operated at high speed, while preventing erroneous operation, because the wiring resistances and the parasitic capacitances of the common source node of the sense amplifiers can be reduced.

    摘要翻译: 一种包括存储单元阵列,位线和读出放大器组的半导体存储器件。 存储单元阵列由大致矩阵排列的多个存储单元构成。 响应于行地址解码信号,激活了排成行的多个存储单元。 为每列提供一对位线。 相应的激活的存储器单元的数据被发送到位线对。 读出放大器组中的每一个具有各自连接到位线对的读出放大器的n个单元,以检测和放大读取到与其连接的位线对的数据。 每个读出放大器组的读出放大器的相应参考电位端子连接到单个公共节点,该公共节点可以响应于行地址信号经由读出放大器激活晶体管导通而连接到参考电位。 由于读出放大器的公共源节点的布线电阻和寄生电容可以减小,所以读出放大器可以高速操作,同时防止错误的操作。

    Sense amplifier having reduced coupling noise
    3.
    发明授权
    Sense amplifier having reduced coupling noise 失效
    具有减少耦合噪声的感应放大器

    公开(公告)号:US5168462A

    公开(公告)日:1992-12-01

    申请号:US585703

    申请日:1990-09-20

    CPC分类号: G11C7/18 G11C5/063 G11C7/06

    摘要: In a semiconductor memory device having plural pairs of bit lines and plural sense amplifiers, a gate electrode of a sense amplifier transistor for sensing potential of a first side of a first bit line pair is formed with an extension portion extending under and along the first side of a second bit line pair. A capacitance C.sub.B formed between the extension of the gate electrode and the first side of the second bit line pair is determined to be equal or larger than capacitance C.sub.A formed between the first side of the first bit line pair and the gate electrode. Since the potential of the first side of the bit line pair fluctuates roughly in phase with that of the second side of the same bit line pair, a harmful influence due to interference noise can be reduced, without increasing the chip layout area, by only modifying the shapes of the gate electrodes of the sense amplifier transistors.

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5848011A

    公开(公告)日:1998-12-08

    申请号:US824737

    申请日:1997-03-26

    CPC分类号: G11C7/065 G11C7/12

    摘要: A semiconductor memory device including a memory cell array, bit lines, and sense amplifier groups. The memory cell array is composed of a plurality of memory cells arranged roughly in a matrix pattern. A plurality of the memory cells arranged in a row are activated in response to a row address decode signal. A pair of the bit lines are provided for each column. The data of the corresponding activated memory cells are transmitted to the bit line pair. Each of the sense amplifier groups has n-units of sense amplifiers each connected to the bit line pair, to sense and amplify data read to the bit line pair connected thereto. The respective reference potential terminals of the sense amplifiers of each of the sense amplifier groups are connected to a single common node which can be connected to a reference potential via a sense amplifier activating transistor turned on in response to a row address signal. The sense amplifiers can be operated at high speed, while preventing erroneous operation, because the wiring resistances and the parasitic capacitances of the common source node of the sense amplifiers can be reduced.

    摘要翻译: 一种包括存储单元阵列,位线和读出放大器组的半导体存储器件。 存储单元阵列由大致矩阵排列的多个存储单元构成。 响应于行地址解码信号,激活了排成行的多个存储单元。 为每列提供一对位线。 相应的激活的存储器单元的数据被发送到位线对。 读出放大器组中的每一个具有各自连接到位线对的读出放大器的n个单元,以检测和放大读取到与其连接的位线对的数据。 每个读出放大器组的读出放大器的各个参考电位端子连接到单个公共节点,该公共节点可以响应于行地址信号经由读出放大器激活晶体管导通而连接到参考电位。 由于读出放大器的公共源节点的布线电阻和寄生电容可以减小,所以读出放大器可以高速操作,同时防止错误的操作。

    Steering lock device for motorcycle
    5.
    发明授权
    Steering lock device for motorcycle 有权
    摩托车转向锁装置

    公开(公告)号:US07802649B2

    公开(公告)日:2010-09-28

    申请号:US11978725

    申请日:2007-10-30

    IPC分类号: B62H5/04 B62H5/06

    摘要: A steering lock device has a steering catch mechanism including a handlebar attached to a steering stem, and a locking arm attached to this handlebar and being equipped with a lock pin for engagement on the tip end portion thereof. The steering catch mechanism also includes a locking claw as an engaging portion that is engagable with the lock pin. The locking claw is usually biased in the unlocking direction. In this catch mechanism, the locking claw is disposed on a rotation track of the lock pin. Accordingly, when an external force is applied to the lock pin such that the lock pin is in contact with the locking claw of the catch mechanism, the locking claw is moved in the locking direction so that the locking claw can be engaged with the lock pin. Therefore, a steering-lock stand-by state is accomplished.

    摘要翻译: 转向锁定装置具有转向锁定机构,该转向锁定机构包括附接到转向杆的把手和连接到该把手的锁定臂,并且配备有用于在其末端部分上接合的锁定销。 转向锁定机构还包括作为可与锁定销接合的接合部的锁定爪。 锁定爪通常在解锁方向上偏置。 在该止动机构中,锁定爪设置在锁定销的旋转轨道上。 因此,当锁定销与锁定机构的锁定爪接触时,当锁定销被施加外力时,锁定爪在锁定方向上移动,使得锁定爪能够与锁定销接合 。 因此,完成了转向锁待机状态。

    Method for producing an α-alumina power
    6.
    发明授权
    Method for producing an α-alumina power 失效
    α-氧化铝粉末的制造方法

    公开(公告)号:US07691362B2

    公开(公告)日:2010-04-06

    申请号:US11211700

    申请日:2005-08-26

    IPC分类号: C01F7/02

    摘要: A method for producing an α-alumina powder is provided. T method for producing an α-alumina powder comprising steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern in the presence of pulverizing agent, (2) mixing the obtained seed crystal with an aluminum salt, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.

    摘要翻译: 提供了α-氧化铝粉末的制造方法。 T制造α-氧化铝粉末的方法,包括以下步骤:(1)以XRD图案粉碎主峰的半峰全宽(Ho)的金属化合物,得到半峰全宽的晶种( H),(2)将得到的晶种与铝盐混合,(3)煅烧混合物,其中H / Ho比为1.06以上。

    Vehicle storage box locking device
    7.
    发明申请
    Vehicle storage box locking device 审中-公开
    车载箱锁定装置

    公开(公告)号:US20100077807A1

    公开(公告)日:2010-04-01

    申请号:US12585550

    申请日:2009-09-17

    IPC分类号: B65D55/14

    摘要: A locking device for a storage box in a vehicle includes a lock configured to place the storage box in a closed state or an open state, and an actuator configured to drive the lock. The locking device further includes a button configured to place the storage box in the open state. The locking device is configured to perform an authentication of a portable key when the button is operated and the storage box is closed. When the portable key is authenticated when the button is operated, the lock is configured to place the storage box in the open state. When the portable key is not authenticated when the button is operated, the storage box is configured to be held in the closed state without the lock being driven. When the portable key is authenticated when the storage box is closed, the lock is configured to be driven to place the storage box in the closed state. When the portable key is not authenticated when the storage box is closed, the storage box is configured to be held in the open state without the lock being driven.

    摘要翻译: 用于车辆中的存储箱的锁定装置包括锁定构造以将存储箱置于关闭状态或打开状态,以及构造成驱动锁定的致动器。 锁定装置还包括被配置为将存储盒放置在打开状态的按钮。 锁定装置被配置为当按钮被操作并且存储箱关闭时执行便携式钥匙的认证。 当按钮被操作时便携钥匙被认证时,锁被配置成将存储盒置于打开状态。 当按钮被操作时便携式钥匙不被认证时,存储盒被配置成保持在关闭状态而不锁定被驱动。 当便携式密钥在存储盒关闭时被认证时,锁被配置为被驱动以将存储盒放置在关闭状态。 当存储盒关闭时便携式密钥未被认证的情况下,存储盒被配置为保持打开状态而不锁定被驱动。

    METHOD FOR PRODUCING AN ALPHA-ALUMINA POWDER
    8.
    发明申请
    METHOD FOR PRODUCING AN ALPHA-ALUMINA POWDER 审中-公开
    生产ALPHA-ALUMINA粉末的方法

    公开(公告)号:US20090123363A1

    公开(公告)日:2009-05-14

    申请号:US12348137

    申请日:2009-01-02

    IPC分类号: C01F7/02

    摘要: The present invention provides a method for producing an α-alumina powder. The method for producing an α-alumina powder comprises steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern, (2) mixing the obtained seed crystal with an aluminum compound, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.

    摘要翻译: 本发明提供一种生产α-氧化铝粉末的方法。 制造α-氧化铝粉末的方法包括以下步骤:(1)以XRD图案粉碎主峰的半峰全宽(Ho)的金属化合物,得到半峰全宽的晶种( H),(2)将获得的晶种与铝化合物混合,(3)煅烧混合物,其中H / Ho的比例为1.06以上。

    In-line optical isolator
    10.
    发明申请
    In-line optical isolator 有权
    在线光隔离器

    公开(公告)号:US20060268405A1

    公开(公告)日:2006-11-30

    申请号:US10558924

    申请日:2004-06-23

    IPC分类号: G02B5/30 G02B27/28

    CPC分类号: G02B6/2746 G02F1/093

    摘要: In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis (3c) of rutile crystal (3) is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (10, 11). Furthermore, the focusing central optical axis (6c) of a focusing rod lens (6) is arranged parallel with optical axes of the optical fibers (10, 11) and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (10) and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (11). An air gap (7) of about 200 [μm] is provided, as a heat insulating means, between the focusing rod lens (6) and a magnetized garnet crystal (8).

    摘要翻译: 在传统的光隔离器中,通过极化分散光信号,或者通过石榴石晶体中的发热来改变特性。 根据本发明,金红石晶体(3)的晶体光轴(3c)被定向成使得普通光线(O)和非寻常光线(E)的分离方向垂直于包括光轴 光纤(10,11)。 此外,聚焦棒透镜(6)的聚焦中心光轴(6c)与光纤(10,11)的光轴平行并且与四条光线基本相等的距离(即普通光线 O)和沿着光纤(10)的光轴传播的异常射线(E)和沿光纤(11)的光轴传播的普通射线(O)和异常射线(E)。 在聚焦棒透镜(6)和被磁化的石榴石晶体(8)之间提供约200μm的气隙(7)作为隔热装置。