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    Nitridation of high-k dielectrics
    1.
    发明申请
    Nitridation of high-k dielectrics 审中-公开
    高k电介质的氮化

    公开(公告)号：US20060051506A1

    公开(公告)日：2006-03-09

    申请号：US11002365

    申请日：2004-12-01

    申请人： Yoshihide Senzaki ,  Craig Bercaw ,  Robert Chatham ,  Randall Higuchi ,  Eugene Lopata

    发明人： Yoshihide Senzaki ,  Craig Bercaw ,  Robert Chatham ,  Randall Higuchi ,  Eugene Lopata

    IPC分类号： C23C16/00

    CPC分类号： H01L21/02332 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31645

    摘要： A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200° C.-700° C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.

    摘要翻译： 提供了制造高k电介质的方法。 该方法包括在处理室中提供其上沉积有高k电介质层的衬底，并将含氮气体引入处理室以将氮掺入高k电介质层。 在一个实施方案中，含氮气体是来自设置在处理室外部的源的氮等离子体气体。 氮气等离子体气体在约20至1800秒的时间内以0至约5000sccm的流速引入处理室。 在另一个实施方案中，处理室保持在约1至100托的压力下，晶片温度保持在约200℃-700℃的范围内。预沉积在基板上的高k电介质膜 可以通过原子层沉积，化学气相沉积（CVD），物理气相沉积（PVD），喷射气相沉积（JVD），气溶胶热解和旋涂形成。