公开(公告)号：US5405454A

公开(公告)日：1995-04-11

申请号：US30556

申请日：1993-03-12

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

IPC分类号： H01L21/335 ,  H01L29/04 ,  H01L29/30

CPC分类号： B82Y10/00 ,  H01L29/045 ,  H01L29/66439 ,  Y10S438/962

摘要： A silicon substrate comprises, at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

摘要翻译： 硅衬底包括至少两个表面，其基本上沿着硅的（111）晶体取向的晶面延伸，（111）晶体取向的晶面相互交叉，通过将硅衬底氧化从而形成的电绝缘层 表面和由电绝缘层与硅衬底的外部电绝缘的导电部分。

公开(公告)号：US5543351A

公开(公告)日：1996-08-06

申请号：US331733

申请日：1994-10-31

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

IPC分类号： H01L21/335 ,  H01L29/04 ,  H01L21/76

CPC分类号： B82Y10/00 ,  H01L29/045 ,  H01L29/66439 ,  Y10S438/962

摘要： A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

摘要翻译： 硅衬底包括至少两个表面，所述至少两个表面基本上沿着硅的（111）晶体取向的晶面延伸，（111）晶体取向的晶面相互交叉，通过将硅衬底从 表面，以及由电绝缘层与硅衬底的外部电绝缘的导电部分。

公开(公告)号：US5296719A

公开(公告)日：1994-03-22

申请号：US915311

申请日：1992-07-20

申请人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

发明人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L29/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/308 ,  H01L27/08

CPC分类号： H01L29/4908 ,  B82Y10/00 ,  H01L21/26586 ,  H01L29/125 ,  H01L29/66439 ,  H01L29/78 ,  Y10S438/962

摘要： A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.

摘要翻译： 量子线形成在硅衬底的三角形突起的顶部。 量子线通过氧化硅层与衬底隔离。 通过不同于衬底的导电类型的杂质层将量子线与衬底隔离。 绝缘膜和栅电极形成在硅衬底的三角形突起的边缘处，并且通过向栅电极施加电压来诱导量子线。 通过形成具有（111）侧面的锯齿形突起，通过进行各向异性的结晶蚀刻，并且通过使用氧化物保护膜氧化硅衬底而制成量子线结构，仅保留在未氧化的突起的顶部。 在另一种方法中，除了突起的顶部之外形成氧化物膜，从而在未氧化区域形成量子线。 在不同的方法中，通过离子注入除了突起的顶部之外形成杂质层。

公开(公告)号：US5244828A

公开(公告)日：1993-09-14

申请号：US934953

申请日：1992-08-25

申请人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

发明人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/335 ,  H01L27/12 ,  H01L29/12

CPC分类号： B82Y10/00 ,  H01L21/2026 ,  H01L27/1203 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66439 ,  Y10S438/962

摘要： The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

摘要翻译： 制造本发明的量子器件的方法包括以下步骤：在第一绝缘层上形成具有侧面的量子点; 至少在量子点的侧面上形成可用作隧道膜的第二绝缘层; 在第一绝缘层上沉积非晶半导体层以覆盖量子点; 去除位于量子点上方的非晶半导体层的至少一部分; 单晶化与第二绝缘层接触的非晶半导体层的预定部分; 以及在所述第一绝缘层上形成包括所述单结晶半导体部分和所述量子点的量子线。

公开(公告)号：US5347140A

公开(公告)日：1994-09-13

申请号：US935988

申请日：1992-08-27

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

IPC分类号： H01L29/768 ,  H01L29/88

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/768

摘要： A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

摘要翻译： 共振电子转移装置包括多个单元，每个单元具有至少一个一维量子线，该量子线具有在一个方向上很长的量子阱，零量子点的基本量化级别高于单向量子线， 尺寸量子线，用于控制量子线和点的各个内部电平的电极，其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。

公开(公告)号：US4300163A

公开(公告)日：1981-11-10

申请号：US101176

申请日：1979-12-07

申请人： Takamichi Wada ,  Yasuaki Terui

发明人： Takamichi Wada ,  Yasuaki Terui

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/367 ,  H04N5/369 ,  H04N5/374 ,  H04N5/34

CPC分类号： H04N5/361 ,  H04N5/2176

摘要： A solid-state imaging apparatus has an imaging unit which is partly shielded against incident light to produce an optically shielded signal. A memory unit is provided for storing the optically shielded signal as a dark state signal during one horizontal scanning period. A line defect signal representative of a line defect present in the imaging unit is stored in the memory unit during the one horizontal scanning period. An optical signal of the imaging unit and a dark state signal stored in the memory unit during the one horizontal scanning period are subtracted so that the line defect signal contained in the optical signal of the imaging unit and the dark state signal are cancelled out to produce a signal having no line defect.

摘要翻译： 固态成像装置具有部分地遮蔽入射光以产生光屏蔽信号的成像单元。 提供存储单元，用于在一个水平扫描周期期间将光屏蔽信号存储为暗状态信号。 在一个水平扫描周期期间，将存在于成像单元中的线缺陷的线缺陷信号存储在存储单元中。 减去成像单元的光信号和在一个水平扫描周期期间存储在存储单元中的暗状态信号，使得包含在成像单元的光信号中的线缺陷信号和暗状态信号被抵消，以产生 没有线路缺陷的信号。

公开(公告)号：US4888633A

公开(公告)日：1989-12-19

申请号：US274293

申请日：1981-06-16

申请人： Yasuaki Terui

发明人： Yasuaki Terui

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/768

CPC分类号： H01L29/768

摘要： A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided on the major surface. A plurality of electrodes is attached to the insulative layer to produce potential wells in response to application of different potentials thereto with respect to a common electrode attached to the opposite surface of the semiconductor body. The n-type conductivity charge transfer channel includes a center section of lower impurity concentration and a peripheral section of higher impurity concentration which substantially eliminates the undesirable lateral field effect which would otherwise occur in an area adjacent to the boundary with the first conductivity region.

摘要翻译： 一种电荷转移装置，包括半导体本体，该半导体本体包括第一导电类型区域和第二导电区域，该第二导电区域限定半导体主体的主表面下面的电荷转移通道。 主表面设有绝缘层。 多个电极附接到绝缘层，以响应于相对于连接到半导体主体的相对表面的公共电极施加不同电位而产生势阱。 n型导电性电荷转移通道包括较低杂质浓度的中心部分和较高杂质浓度的周边部分，其基本上消除了否则将在与第一导电区域的边界相邻的区域中发生的不期望的横向场效应。

公开(公告)号：US4271420A

公开(公告)日：1981-06-02

申请号：US119187

申请日：1980-02-06

申请人： Takao Chikamura ,  Kazufumi Ogawa ,  Yasuaki Terui ,  Shinji Fujiwara ,  Masakazu Fukai

发明人： Takao Chikamura ,  Kazufumi Ogawa ,  Yasuaki Terui ,  Shinji Fujiwara ,  Masakazu Fukai

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L27/14667 ,  H01L27/14672 ,  H04N3/1556

摘要： In a solid-state image pickup device of the type in which a photosensitive or photoconductive film is formed over a substrate capable of charge-transfer or X-Y address scanning and an electrode is formed over the photosensitive or photoconductive film, a means for applying to the electrode a voltage having an amplitude proportional to the amount of incident light, whereby blooming may be minimized and an automatic aperture control function may be attained. Because the voltage applied to the electrode over the photosensitive or photoconductive film is set so that the sensitivity of the photoconductive film may be decreased when a light image of high intensity falls on the device, blooming may be avoided.

摘要翻译： 在其中在能够进行电荷转移或XY地址扫描的基板上形成感光或光电导膜并且在感光或感光膜上形成电极的固态图像拾取装置中， 电极具有与入射光量成比例的振幅的电压，从而可以最小化起霜，并且可以实现自动孔径控制功能。 因为施加到感光或感光膜上的电极上的电压被设定为使得当高强度的光图像落在器件上时光电导膜的灵敏度可能降低，因此可以避免起霜。

公开(公告)号：US4596604A

公开(公告)日：1986-06-24

申请号：US661709

申请日：1984-10-17

申请人： Shigenobu Akiyama ,  Yasuaki Terui ,  Shin-ichi Ogawa

发明人： Shigenobu Akiyama ,  Yasuaki Terui ,  Shin-ichi Ogawa

IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/265 ,  C30B33/00

CPC分类号： H01L21/8221 ,  Y10S438/98

摘要： A method of obtaining a multilayer semiconductor device by forming a semiconductor crystallized layer through an insulative material over a semiconductor substrate in which a semiconductor device is formed. The insulative material is formed on the semiconductor substrate in which the semiconductor device is fabricated and a first semiconductor layer is formed on the insulative material. Thereafter, the surface of the first semiconductor layer is planarized and an insulative material is formed on this planarized surface, then a second semiconductor layer is formed on this insulative material. Next, the second semiconductor layer is crystallized by the irradiation of an energy beam, thereby fabricating a device in the second crystallized semiconductor layer.

摘要翻译： 一种通过在形成有半导体器件的半导体衬底上的绝缘材料形成半导体结晶层来获得多层半导体器件的方法。 绝缘材料形成在其上制造半导体器件的半导体衬底上，并且在绝缘材料上形成第一半导体层。 此后，第一半导体层的表面被平坦化，并且在该平坦化表面上形成绝缘材料，然后在该绝缘材料上形成第二半导体层。 接下来，通过照射能量束使第二半导体层结晶，从而在第二结晶半导体层中制造器件。

公开(公告)号：US4236829A

公开(公告)日：1980-12-02

申请号：US6129

申请日：1979-01-24

申请人： Takao Chikamura ,  Shinji Fujiwara ,  Yasuaki Terui ,  Masakazu Fukai

发明人： Takao Chikamura ,  Shinji Fujiwara ,  Yasuaki Terui ,  Masakazu Fukai

IPC分类号： H01L27/146 ,  H01L29/161 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L27/14665

摘要： A solid-state image sensor is provided, which has a high spectral response over the whole visible light range and wherein a photoconductor layer having a hetero-junction defined by a hole blocking layer and a layer consisting of a system (Zn.sub.1-x Cd.sub.x Te).sub.1-y (In.sub.2 Te.sub.3).sub.y is formed over a semiconductor substrate which has charge transfer type unit cells or X-Y switching matrix type unit cells.

摘要翻译： 提供固态图像传感器，其在整个可见光范围内具有高光谱响应，并且其中具有由空穴阻挡层和由系统（Zn1-xCdxTe）1组成的层）限定的异质结的感光体层 -y（In2Te3）y形成在具有电荷转移型单元电池或XY开关矩阵型单元电池的半导体衬底上。