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公开(公告)号：US5385991A
公开(公告)日：1995-01-31
申请号：US844590
申请日：1992-03-27
申请人： Yoshihisa Yamaguchi , Shinjiro Suga , Masatoshi Morikawa , Kunimichi Kubo , Motokazu Watanabe , Yasuhiko Sano
发明人： Yoshihisa Yamaguchi , Shinjiro Suga , Masatoshi Morikawa , Kunimichi Kubo , Motokazu Watanabe , Yasuhiko Sano
CPC分类号： C08F10/00 , Y10S526/901
摘要： A process for producing polyolefin with a vapor-phase fluidized-bed reactor, wherein the reaction is started after filling the reactor with particles which contain moisture and/or molecular oxygen and can form a fluidized bed in order to prevent the formation of molten resin which is liable to occur at the start of the reaction and to attain a smooth operation of the reactor.
摘要翻译： PCT No.PCT / JP91 / 01010 Sec。 371日期：1992年3月27日 102（e）1992年3月27日PCT PCT 1991年7月26日PCT公布。 出版物WO92 / 02563 日本1992年2月20日。一种用气相流化床反应器生产聚烯烃的方法，其中反应开始于含有水分和/或分子氧的颗粒填充反应器之后，可形成流化床，以便 防止在反应开始时易于发生的熔融树脂的形成，并使反应器顺利地进行操作。
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公开(公告)号：US5525687A
公开(公告)日：1996-06-11
申请号：US328083
申请日：1994-10-24
申请人： Yoshihisa Yamaguchi , Shinjiro Suga , Masatoshi Morikawa , Kunimichi Kubo , Motokazu Watanabe , Yasuhiko Sano
发明人： Yoshihisa Yamaguchi , Shinjiro Suga , Masatoshi Morikawa , Kunimichi Kubo , Motokazu Watanabe , Yasuhiko Sano
CPC分类号： C08F10/00 , Y10S526/901
摘要： A process for producing polyolefin with a vapor-phase fluidized-bed reactor, wherein the reaction is started after filling the reactor with particles which contain moisture and/or molecular oxygen and can form a fluidized bed in order to prevent the formation of molten resin which is liable to occur at the start of the reaction and to attain a smooth operation of the reactor.
摘要翻译： 一种用气相流化床反应器生产聚烯烃的方法，其中反应开始于含有水分和/或分子氧的颗粒填充反应器之后，可形成流化床，以防止形成熔融树脂， 在反应开始时容易发生，从而使反应器顺利运行。
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3.发明授权
公开(公告)号：US5310833A
公开(公告)日：1994-05-10
申请号：US20758
申请日：1993-02-22
申请人： Kunimichi Kubo , Motokazu Watanabe , Mamoru Yoshikawa , Masatoshi Morikawa , Yoshihisa Yamaguchi
发明人： Kunimichi Kubo , Motokazu Watanabe , Mamoru Yoshikawa , Masatoshi Morikawa , Yoshihisa Yamaguchi
CPC分类号： B01J19/26 , B01J3/02 , B01J8/0005 , B01J8/0015 , B01J8/0035 , B01J8/004 , B01J8/24 , C08F10/00 , B01J2208/00265 , B01J2208/00548 , B01J2208/00752 , Y10S526/901
摘要： A process for feeding a powder catalyst with a gas intermittently to a high-pressure fluidized bed reactor for the vapor phase polymerization of olefin, wherein the cross section of a catalyst feed pipe is reduced midway through the pipe to thereby make continual catalyst feeding possible and prevent the formation of a lump polymer.
摘要翻译： 一种将气体间歇地供给到高压流化床反应器的粉末催化剂进行烯烃气相聚合的方法，其中催化剂进料管的横截面通过管中途减少，从而使连续的催化剂进料成为可能， 防止形成块状聚合物。
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4.发明授权Process for feeding catalyst to fluidized bed for vapor phase polymerization 失效将催化剂输送到流化床用于蒸气相聚合的方法
公开(公告)号：US5202396A
公开(公告)日：1993-04-13
申请号：US842094
申请日：1992-03-19
申请人： Kunimichi Kubo , Motokazu Watanabe , Mamoru Yoshikawa , Masatoshi Morikawa , Yoshihisa Yamaguchi
发明人： Kunimichi Kubo , Motokazu Watanabe , Mamoru Yoshikawa , Masatoshi Morikawa , Yoshihisa Yamaguchi
CPC分类号： B01J19/26 , B01J3/02 , B01J8/0005 , B01J8/0015 , B01J8/0035 , B01J8/004 , B01J8/24 , C08F10/00 , B01J2208/00265 , B01J2208/00548 , B01J2208/00752 , Y10S526/901
摘要： A process for feeding a powder catalyst with a gas intermittently to a high-pressure fluidized bed reactor for the vapor phase polymerization of olefin, wherein the cross section of a catalyst feed pipe is reduced midway through the pipe to thereby make continual catalyst feeding possible and prevent the formation of a lump polymer.
摘要翻译： PCT No.PCT / JP91 / 00968 Sec。 371日期：1992年3月19日 102（e）1992年3月19日PCT PCT 1991年7月19日PCT公布。 出版物WO92 / 01722 日期：1992年2月6日。一种将气体间歇地送入用于烯烃气相聚合的高压流化床反应器的粉末催化剂的方法，其中催化剂进料管的横截面通过管中途减少至 从而使连续的催化剂进料成为可能，并防止形成块状聚合物。
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公开(公告)号：US08080831B2
公开(公告)日：2011-12-20
申请号：US12784560
申请日：2010-05-21
IPC分类号： H01L21/02
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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公开(公告)号：US20090108371A1
公开(公告)日：2009-04-30
申请号：US12341330
申请日：2008-12-22
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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公开(公告)号：US20060261442A1
公开(公告)日：2006-11-23
申请号：US11493829
申请日：2006-07-27
IPC分类号： H01L29/00
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device includes a transmission power amplifier having cascaded MOSFET amplification stages disposed over a main surface of a semiconductor substrate. A CMOSFET control circuit controls the amplification stages. A first capacitor is also provided having upper and lower metal film electrodes formed over the main surface of the semiconductor substrate. The amplification stages are electrically coupled to one another via an inter-stage matching circuit which includes the first capacitor.
摘要翻译： 半导体器件包括具有设置在半导体衬底的主表面上的级联MOSFET放大级的发射功率放大器。 CMOSFET控制电路控制放大级。 还提供了第一电容器，其具有形成在半导体衬底的主表面上的上金属膜电极和下金属膜电极。 放大级通过包括第一电容器的级间匹配电路彼此电耦合。
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8.发明授权公开(公告)号：US06492872B1
公开(公告)日：2002-12-10
申请号：US09657237
申请日：2000-09-07
申请人： Toru Fujioka , Yoshikuni Matsunaga , Isao Yoshida , Masatoshi Morikawa , Masao Hotta , Tetsuaki Adachi
发明人： Toru Fujioka , Yoshikuni Matsunaga , Isao Yoshida , Masatoshi Morikawa , Masao Hotta , Tetsuaki Adachi
IPC分类号： H03G310
CPC分类号： H03F1/301 , H03G3/3042
摘要： A high frequency power amplifier module is provided for improving output controllability. A wireless communication apparatus incorporates a high frequency power amplifier module in a multi-stage configuration including a plurality of cascaded MOSFETS. The power amplifier module comprises a bias circuit for generating a gate voltage in response to a power control voltage (vapc) generated based on a power control signal of the wireless communication apparatus. The gate voltage has a bias pattern which presents smaller fluctuations in output power in response to a control voltage (Vapc) in a region near a threshold voltage (Vth) of the MOSFETs in respective amplification stages. In this way, the controllability for the output power is improved. More specifically, the power amplifier module has a gate bias circuit for generating the gate voltage (Vg) which follows a gate voltage pattern. The gate voltage (Vg) supplied to a control terminal in response to the control voltage (Vapc) largely changes in a region where the gate voltage (Vg) is lower than the threshold voltage (Vth) of the respective MOSFETs, and slightly changes near the threshold voltage (Vth). Also, the gate voltage (Vg) presents desired characteristics from the vicinity of the threshold voltage (Vth) to a high Vapc voltage region.
摘要翻译： 提供了一种用于提高输出可控性的高频功率放大器模块。 无线通信装置将包括多个级联MOSFET的多级配置的高频功率放大器模块结合在一起。 功率放大器模块包括用于响应于基于无线通信设备的功率控制信号产生的功率控制电压（vapc）产生栅极电压的偏置电路。 栅极电压具有偏置图案，其响应于在各个放大级中的MOSFET的阈值电压（Vth）附近的区域中的控制电压（Vapc），输出功率的波动较小。 以这种方式，提高了输出功率的可控性。 更具体地，功率放大器模块具有用于产生跟随栅极电压图案的栅极电压（Vg）的栅极偏置电路。 响应于控制电压（Vapc）而提供给控制端的栅极电压（Vg）在栅极电压（Vg）低于各个MOSFET的阈值电压（Vth）的区域内大大变化，并且稍微改变 阈值电压（Vth）。 此外，栅极电压（Vg）从阈值电压（Vth）附近到高Vapc电压区域呈现期望的特性。
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公开(公告)号：US06433639B1
公开(公告)日：2002-08-13
申请号：US09716935
申请日：2000-11-22
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F316
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the, EDGE (for a linear amplifying action).
摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换终端的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。
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公开(公告)号：US5847521A
公开(公告)日：1998-12-08
申请号：US684343
申请日：1996-07-19
申请人： Masatoshi Morikawa , Kunio Seki , Yasuhiko Kokami
发明人： Masatoshi Morikawa , Kunio Seki , Yasuhiko Kokami
摘要： A motor drive method and apparatus for reducing noise of a motor. The motor drive apparatus includes first, second and third half bridge circuits. Each of the first, second and third half bridge circuits includes a first transistor which is adapted to form a current path between a first operational potential and an output terminal thereof and a second transistor which is adapted to form a current path between a second operational potential and the output terminal thereof. Each of the output terminals are connected to the corresponding drive coil of a motor. Each of the first and second transistors includes a control terminal to which a control signal is supplied. The motor drive apparatus detects a counter-induced voltage of the drive coil corresponding to the second half bridge circuit by supplying control signals to the first and second transistors thereof for making each current path therein a non-conducting state, and for forming current paths in the first transistor of the first half bridge circuit and in the second transistor of the third half bridge circuit respectively. Further the motor drive apparatus cuts off the current path of the first transistor in the first half bridge circuit, forms it and cuts it off again by supplying a control signal thereto after start of supplying a control signal for forming the current path of the first transistor in the second half bridge circuit. A control signal for forming the current path is supplied to the control terminal of the second transistor in the third half bridge circuit.
摘要翻译： 一种用于降低电动机噪声的电动机驱动方法和装置。 电机驱动装置包括第一，第二和第三半桥电路。 第一，第二和第三半桥电路中的每一个包括第一晶体管，其适于在第一操作电位和其输出端之间形成电流路径，以及第二晶体管，其适于在第二操作电位之间形成电流路径 及其输出端。 每个输出端子连接到电动机的相应的驱动线圈。 第一和第二晶体管中的每一个包括控制端子，控制端子被提供给控制端子。 马达驱动装置通过向其第一和第二晶体管提供控制信号来检测与第二半桥电路相对应的驱动线圈的反感应电压，以使其中的每个电流路径处于非导通状态，并且用于形成电流路径 第一半桥电路的第一晶体管和第三半桥电路的第二晶体管。 此外，马达驱动装置切断第一半桥电路中的第一晶体管的电流路径，并且在开始提供用于形成第一晶体管的电流路径的控制信号之后，通过向其提供控制信号来形成它并再次切断 在后半桥电路中。 用于形成电流路径的控制信号被提供给第三半桥电路中的第二晶体管的控制端。
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