摘要:
A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.
摘要:
A resist composition comprising a base resin, an acid release agent, and a dissolution inhibitor is improved in sensitivity and resolution when the base resin is typically selected from poly-t-butoxystyrene/poly-hydroxystyrene, poly-t-butoxystyrene/poly-p-methoxymethoxystyrene/polyhydroxystyrene, and poly-t-butoxystyrene/poly-p-methoxystyrene/polyhydroxystyrene copolymers. The composition forms a resist useful for the manufacture of LSI.
摘要:
Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要:
Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
The precursor composition of silicon carbide fibers provided by the invention has greatly improved spinnability and can be spun at a very high spinning velocity to give a green filament which has a much larger tensile strength than those of conventional precursor materials and is capable of giving silicon carbide fibers having increased tensile strength by the infusibilization and calcination of the green filament of the composition under tension. The composition comprises from 80 to 99.9 parts by weight of a polycarbosilane polymer and from 20 to 0.01 part by weight of a silmethylene polymer having a degree of polymerization larger than the specified lower limit.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
A water-soluble composition comprising a water-soluble N-vinylpyrrolidone copolymer and a fluorinated organic acid in a weight ratio of from 20:80 to 70:30 is useful in forming a water-soluble overlying film on a chemically amplified resist layer. The overlying film functions as both an anti-reflective film and a protective film during resist pattern formation by photolithography.
摘要:
An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.