摘要:
An catalyst for purifying exhaust gas comprising an OCS material that has sufficient heat resistance and achieves a favorable balance between the oxygen storage volume and the oxygen absorption/release rate includes an catalyst for purifying exhaust, which has a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises a ceria-zirconia-based composite oxide having a pyrochlore structure in an amount of 5 to 100 g/L based on the volume of the substrate, the ceria-zirconia-based composite oxide has a secondary particle size (D50) of 3 μm to 7 μm, and the ceria-zirconia-based composite oxide optionally contains praseodymium.
摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, determined by the following Formulae (1) to (3), is not greater than 20: [ Math . 1 ] R i ( Fe ) = I i ( Fe ) × 100 I i ( Fe ) + I i ( Zr ) + I i ( X ) ( 1 ) R i ( Zr + X ) = { I i ( Zr ) + I i ( X ) } × 100 I i ( Fe ) + I i ( Zr ) + I i ( X ) ( 2 ) COV ( Fe , Zr + X ) = 1 n ∑ i = 1 n [ { R i ( Fe ) - R av ( Fe ) } × { R i ( Zr + X ) - R av ( Zr + X ) } ] ( 3 ) (in the formula, Ii(Fe), Ii(Zr), and Ii(X) respectively represent the ratios of the X-ray intensities of iron, zirconium, and the rare-earth element measured at a measurement point i (where i=1 to n) to the 100% intensities of the respective elements as measured by subjecting the composite oxide to a ray analysis through EPMA (WDX: wavelength dispersive X-ray spectrometry), where Rav(Fe) and Rav(Zr+X) represent the mean values of Ri(Fe) and Ri(Zr+X), respectively, at all measurement points n).
摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要:
An electronic device includes a power supply and a power supply circuit. The power supply circuit is configured to alternately switch a state of the electronic device between a first state to supply power to another device and a second state to receive power from said another device, and stop a switching operation of the state of the electronic device when the electronic device is off, to fix the state of the electronic device to one of the first state and the second state.
摘要:
A recording medium conveyance guide device includes a conveyance guide disposed upstream from a transfer nip to transfer an image to a recording medium in a recording-medium conveyance direction, to at least partially contact the recording medium. The recording medium conveyance guide device further includes a drive device to move a leading edge of the conveyance guide from a first position to a second position closer to the transfer nip than the first position when the trailing edge of the recording medium approaches the leading edge of the conveyance guide.
摘要:
The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.
摘要:
A pressure detection unit includes a first substrate and a second substrate which are disposed in opposition to each other and subject to load from the outside, a pressure detection portion having a pair of electrodes provided between the first substrate and the second substrate and in the first substrate and the second substrate, and electrically conductive pressure-sensitive ink disposed between the pair of electrodes and having electrical characteristics which varies according to the load, and a load transmission member disposed between the first substrate and the pressure detection portion and/or between the second substrate and the pressure detection portion, the load transmission member transmitting the load to the pressure detection portion in a concentrated manner.
摘要:
A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要:
A hydrogen generation device (100) of the present invention includes: a transparent substrate (1); a photocatalytic electrode (4) formed of a transparent conductive layer (2) and a photocatalytic layer (3) disposed on the transparent substrate (1); a counter electrode (8) connected electrically to the transparent conductive layer (2); a water-containing electrolyte solution layer provided between the photocatalytic electrode (3) and the counter electrode (8); a separator (6) that separates the electrolyte solution layer into a first electrolyte solution layer (5) in contact with the photocatalytic electrode (4) and a second electrolyte solution layer (7) in contact with the counter electrode (8); a first gas outlet (14) for discharging a gas generated in the first electrolyte solution layer (5); and a second gas outlet (15) for discharging a gas generated in the second electrolyte solution layer (7). The photocatalytic electrode (4) and the counter electrode (8) are arranged so that a surface of the photocatalytic layer (3) and a surface of the counter electrode (8) face each other. The separator (6) allows an electrolyte in the electrolyte solution layer to pass therethrough and prevents hydrogen gas and oxygen gas in the electrolyte solution layer from passing therethrough.
摘要:
A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).